12_Memory.pdf
(
1067 KB
)
Pobierz
Pamiİġ ulotna RAM
Pamiħę ulotna
RAM
Volatile
R
andom
A
ccess
M
emory)
Technika cyfrowa 2
utrata
cc
ccc
wykĀad 12
SRAM
c
c
c
cc
c
cc
Pamiħci procesorw
DRAM
c
c
Katedra Metrologii Elektronicznej i Fotonicznej
Andrzej Stİpieĺ
Pamiİġ nieulotna NVRAM
Pamiİġ ROM (R
ead
-O
nly
M
emory
)
ccccc
ROM
cccc
PROM
Programmable ROM
c
EPROM
Electrically Programmable ROM
c
OTP EPROM
EEPROM
Erasable Electrically Programmable ROM
c
Flash EEPROM
c
cc
Pamiħę nieulotna
NVRAM
N
V
R
A
cc
M
zachowanie
cc
ccc
cc
c
c c
cc
cc
c
cc
ccc
Memory Attributes
APPLICATION NOTE 63. Using Nonvolatile Static RAMs.
Dallas Semiconductor, Mar 29, 2001
Memory Parameter
(www.st.com
Memories)
Memory Size
c c c
ccc
Supply Voltage
c
c
Memory Organization
Access Time
Chip Enable
c
Output Enable
Programming Voltage
Current
c c c
Standby Supply Voltage Current
c
c c
Operating Temperature
c
c
c
c
Static RAM +++
+ +++ +++
DRAM
+++
+++ ++ +++
PSEUDO
STATIC RAM +
+
++
+ +++
NV SRAM
+++ ++ + +++ +++ ++
Flash
++ ++ ++ ++ ++
+
++
EEPROM
+
++
+
+
+
+
EPROM
++ ++ ++ ++
+
++
OTP EPROM +++ +++ +++ +++ +
+++
ROM
+++ +++ +++ +++ +
+++
1
Memory - Signal Names
Microprocessor
& Memory
V
CC
V
SS
V
PP
A
0
.. A
XX
D
0
.. D
XX
Q
0
.. Q
XX
RD
WR
CS
E
O
E
G
P
NC
c
DU
c
ROM
Memory
Address Bus
Data Bus
Microprocessor
Microcontroller
RAM
Memory
Single CS SRAM & dual CS SRAM
Single CS SRAM & dual CS SRAM
TNAL9803. BENEFIT OF
DUAL CS. TECHNICAL
NOTE
SAMSUNG Electronics CO.,
LTD. 1998
TNAL9803. BENEFIT OF DUAL CS. TECHNICAL NOTE
SAMSUNG Electronics CO., LTD. 1998
cc
c
c ccc
c
c c
c
SRAM
(
S
tatic
R
andom
A
ccess
M
emory)
NV SRAM
(
N
on
V
olatile
S
tatic
R
andom
A
ccess
M
emory)
ccc
c
c
c
c c
c c
c
cccc
c cc
c
c cc
cc
c
cc
c
cc
c
c c cc
ccc
2
SRAM
K6R1008V1D (1/4)
SRAM
Single Access Read Cycle
K6R1008V1D.
1Mb Asynchronous
Fast SRAM High-Speed
CMOS Static RAM.
Samsung Electronics
June 2003
c
cc
t
RC
c
t
AA
t
OH
???
SRAM - READ
K6R1008V1D-08 (3/4)
SRAM
K6R1008V1D-08/ -10 (2/4)
c
c
c
c
cc
c
cc
c
cc
c
SRAM - Write
K6R1008V1D-08 (4/4)
Memory
& Memory
(1/2)
K6R1008V1D. 1Mb Asynchronous Fast SRAM High-Speed CMOS
Static RAM. Samsung Electronics June 2003
K6F1008V2C. 128Kx8 bit Super Low Power and Low Voltage
CMOS Static RAM. Samsung Electronics, March 2005
c
m
c
(
OE
=Low Fixed)
(CS = Controlled)
c
cc
cc
3
Memory
& Memory
(2/2)
Synchronous Pipelined SRAM
K6R1008V1D. 1Mb Asynchronous Fast SRAM High-Speed CMOS
Static RAM. Samsung Electronics June 2003
K6F1008V2C. 128Kx8 bit Super Low Power and Low Voltage
CMOS Static RAM. Samsung Electronics, March 2005
K7P323688M / K7P321888M.
1Mx36 & 2Mx18 Synchronous Pipelined SRAM
SAMSUNG Electronics CO., LTD.
c
Pipeline
cc
cc c
cc
ccc
cc
c
c
c
Flow-through
cc
cc
cc
Synchronous
Pi
pelined
S
RA
M
Timing Waveforms of Normal
Active Cycles (G Controlled, SS=Low)
Synchronous Pipelined
SRAM
Functional Block Diagram
c
Read
Address
Register
>3,3ns
c
A1
A2
A3
A4
A5
A4
Write
Address
Register
c
c
Q1
Q2
D3
D4
Q5
Q4
c
c
D3, D4
c
A3, A4
Q4
c
A4
ccc
c
c
Synchronous Pipelined
SRAM
IEEE 1149.1 Test Access Port &
Boundary SCAN-JTAG
DRAM
(
D
ynamic
R
andom
A
ccess
M
emory)
cc
c
cc
c
c
c
c
c c
c c
cc c c
c
c
cc c
c
cccc
4
SRAM / DRAM Cell
DRAM Architecture
c
SRAM Cell
DRAM Cell
c
c
c
cc
cc
Memory
Array
C
ccc
cc
c
c
1. Activation:
ccc
c
2. Access Column:
c
3. Precharge:
c
c
cc
DRAM
- timing
What does 4-3-3 SDRAM mean
Engineer To Engineer. Note EE-126 Contributed by Robert Hoffmann,
European DSP
Applications. Analog De
vi
ces, Rev1
(20-March-02)
t
RP
= 20 n
s
4
Î
3
Î
3
CL = t
CAC
/ t
CLK
= 3,33
4
c
t
RP
/ t
CLK
= 2,67
3
t
R
CD
= 20 ns
t
RCD
/ t
CLK
= 2,67
3
t
CAC
= 25
ns
What does 2-3-3-6-1T DRAM mean
DRAM
Refresh
Engineer To Engineer. Note EE-126 Contributed by Robert Hoffmann.
European DSP Applications. Analog Devices, Rev1 (20-March-02)
TN-04-30. VARIOUS METHODS OF DRAM REFRESH
Rev. 2/99, Micron Technology
t
RAS
= 40 ns
t
RP
= 20 n
s
2
Î
3
Î
3
Î
6
CL = t
CAC
/ t
C
LK
= 2
2
c
t
RP
/ t
CLK
= 2,67
3
ccc
capacitor
20-40 fF
ccc
c ccc c
t
R
CD
= 20 ns
t
RCD
/ t
CLK
= 2,67
3
t
RAS
/ t
CLK
= 5,33
6
t
CAC
= 15
ns
Bank cycle time
DRAM
refresh
c c
c
Note: The Refresh uses internal read during t
RAS
and write during t
RP
.
Note: The Refresh row cycle t
RC
=t
RAS
+t
RP
.
3
refresh modes
5
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