2SB1274.PDF

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Ordering number : ENN2246B
2SB1274/2SD1913
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1274/2SD1913
60V/3A Low-Frequency
Power Amplifier Applications
Applications
• General power amplifier.
Package Dimensions
unit : mm
2041A
[2SB1274/2SD1913]
Features
• Wide ASO (Adoption of MBIT process).
• Low saturation voltage.
• High reliability.
• High breakdown voltage.
• Micaless package facilitating mounting.
10.0
4.5
2.8
3.2
2.4
1.6
1.2
0.7
0.75
1 23
1 : Base
2 : Collector
3 : Emitter
Specifications
( ):2SB1274
Absolute Maximum Ratings at Ta=25
2.55
2.55
2.55
2.55
SANYO : TO-220ML
°
C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
V CBO
-
)60
V
Collector-to-Emitter Voltage
V CEO
- )60
V
Emitter-to-Base Voltage
V EBO
(
- )6
V
Collector Current
I C
(
-
)3
A
Collector Current (Pulse)
I CP
(
- )8
A
Collector Dissipation
P C
2
W
Tc=25
°
C
20
W
Junction Temperature
Tj
150
° C
Storage Temperature
Tstg
- 55 to +150
° C
Electrical Characteristics at Ta=25
°
C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
I CBO
V CB =(--)40V, I E =0
(--)100
m A
Emitter Cutoff Current
I EBO
V EB =(--)4V, I C =0
(--)100 m A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2000 TS IM 8-2055
No.2246-1/4
(
(
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2SB1274/2SD1913
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
h FE 1
V CE =(--)5V, I C =(--)0.5A
70*
280*
DC Current Gain
h FE 2
V CE =(--)5V, I C =(--)3A
20
Gain-Bandwidth Product
f T
V CE =(--)5V, I C =(--)0.5A
100
MHz
Output Capacitance
Cob
V CB =(--)10V, f=1MHz
(60)40
pF
Collector-to-Emitter Saturation Voltage
V CE (sat)
I C =(--)2A, I B =(--)0.2A
(--)0.4
(--)1
V
Base-to-Emitter Voltage
V BE
V CE =(--)5V, I C =(--)0.5A
(--)0.8
(--)1
V
Collector-to-Base Breakdown Voltage
V (BR)CBO I C =(--)1mA, I E =0
(--)60
V
Collector-to-Emitter Breakdown Voltage
V (BR)CEO I C =5mA, R BE = ¥
(--)60
V
Emitter-to-Base Breakdown Voltage
V (BR)EBO I E =(--)1mA, I C =0
(--)6
V
* : The 2SBB1274 / 2SD1913 are classified by 0.5A h FE as follows :
Rank
Q
R
S
h FE
70 to 140
100 to 200
140 to 280
--3.0
I C -- V CE
3.0
I C -- V CE
2SB1274
2SD1913
--2.5
2.5
--2.0
--15 mA
2.0
10mA
--1.5
- -10mA
1.5
--1.0
--5mA
1.0
5mA
--0.5
0.5
0
I B =0
0
I B =0
0
-- 1
--2
-- 3
-- 4
-- 5
-- 6
0
1
2
3
4
5
6
Collector-to-Emitter Voltage, V CE -- V
IT02816
Collector-to-Emitter Voltage, V CE -- V
IT02817
I C -- V BE
I C -- V BE
3.6
--3.6
2SB1274
V CE = --5V
2SD1913
V CE =5V
--3.2
3.2
--2.8
2.8
--2.4
2.4
--2.0
2.0
--1.6
1.6
--1.2
1.2
--0.8
0.8
--0.4
0.4
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Base-to-Emitter Voltage, V BE -- V
IT02818
Base-to-Emitter Voltage, V BE -- V
IT02819
No.2246-2/4
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2SB1274/2SD1913
1000
h FE -- I C
1000
h FE -- I C
2SB1274
V CE = --5V
2SD1913
V CE =5V
7
7
5
5
3
3
2
2
100
100
7
7
5
5
3
3
2
2
7 --0.01
23
5
7
--0.1
2 3
5
7
--1.0
2 3
5
7 0.01
23
5
7
0.1
2 3
5
7
1.0
2 3
5
Collector Current, I C -- A
IT02820
Collector Current, I C -- A
IT02821
f T -- I C
f T -- I C
3
3
2SB1274
V CE = --5V
2SD1913
V CE =5V
2
2
100
100
7
7
5
5
3
3
2
2
10
10
7
7
5
5
7
--0.01
2
3
5
7
--0.1
2
3
5
7
--1.0
2 3
5
5
0.01
23
5
0.1
2 3
5
1.0
2 3
5
Collector Current, I C -- A
IT02822
Collector Current, I C -- A
IT02823
V CE (sat) -- I C
V CE (sat) -- I C
2
2
2SB1274
I C / I B =10
2SD1913
I C / I B =10
--1.0
1.0
7
7
5
5
3
2
3
2
--0.1
0.1
7
7
5
5
3
2
3
2
--0.01
0.01
7
7
7 --0.01
2
35
7
--0.1
2 3
57
--1.0
2 3
5
7 0.01
2
35
7
0.1
2 3
57
1.0
2 3
5
Collector Current, I C -- A
IT02824
Collector Current, I C -- A
IT02825
V BE (sat) -- I C
V BE (sat) -- I C
2
2
2SB1274
I C / I B =10
2SD1913
I C / I B =10
--10
10
7
7
5
5
3
3
2
2
--1.0
1.0
Ta= --40°
C
7
7
5
5
3
3
7 --0.01
23
57
--0.1
23
57
--1.0
23 5
7 0.01
23
57
0.1
23
57
1.0
23 5
Collector Current, I C -- A
IT02826
Collector Current, I C -- A
IT02827
No.2246-3/4
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2SB1274/2SD1913
A S O
A S O
2
2
2SB1274
2SD1913
--10
I CP = --8A
100
µ
s
10
I CP =8A
100
µ
s
7
7
5
5
3
I C = --3A
3
I C =3A
2
2
--1.0
1.0
7
7
5
5
3
3
2
2
--0.1
0.1
2
3
5
7
--10
2
3
5
7
--100
2
3
5
7
10
2
3
5
7
100
Collector-to-Emitter Voltage, V CE -- V
IT02828
Collector-to-Emitter Voltage, V CE -- V
IT02829
P C -- Ta
P C -- Tc
2.5
25
2SB1274 / 2SD1913
2SB1274 / 2SD1913
2.0
20
1.5
15
1.0
10
0.5
5
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT02831
Case Temperature, Tc -- °C
IT02830
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2000. Specifications and information herein are subject
to change without notice.
PS
No.2246-4/4
0
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