2SC5243.pdf
(
46 KB
)
Pobierz
2SC5243_E
Power Transistors
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
f
3.3
±
0.2
20.0
±
0.5
5.0
±
0.3
3.0
n
Features
l
High breakdown voltage, and high reliability through the use of a
glass passivation layer
l
High-speed switching
l
Wide area of safe operation (ASO)
1
.5
2.0
±
0.3
1.5
2.7
n
Absolute Maximum Ratings
(T
C
=25˚C)
3.0
±
0.3
±
0.3
1.0
±
0.2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP
*
I
BP
Ratings
1700
1700
6
15
30
10
200
3.5
150
–55 to +150
Unit
V
V
V
A
A
A
0.6
±
0.2
5.45
±
0.3
10.9
±
0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP–3L Package
T
C
=25°C
Ta=25°C
P
C
W
T
j
T
stg
˚C
˚C
*
Non-repetitive peak
n
Electrical Characteristics
(T
C
=25˚C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Symbol
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
Conditions
V
CB
= 1700V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 10A
I
C
= 10A, I
B
= 2.8A
I
C
= 10A, I
B
= 2.8A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 12A, I
B1
= 2.4A, I
B2
= –4.8A,
Resistance loaded
min
typ
max
1
50
12
3
1.5
Unit
mA
mA
5
V
V
MHz
ms
ms
3
1.5
0.12
2.5
0.2
1
Power Transistors
2SC5243
P
C
—Ta
I
C
—V
CE
h
FE
—I
C
240
16
1000
V
CE
=5V
220
(1) T
C
=Ta
(2) With a 100
´
100
´
2mm
Al heat sink
(3) Without heat sink
(P
C
=3.0W)
T
C
=25˚C
14
200
(1)
180
12
I
B
=1000mA
100
800mA
160
600mA
400mA
10
T
C
=100˚C
25˚C
140
120
8
10
100
200mA
–25˚C
6
80
60
4
1
40
(3)
2
20
(2)
0
0
0.1
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
0.01
0.1
1
10
Ambient temperature Ta
(
˚C
)
Collector to emitter voltage V
CE
(
V
)
Collector current I
C
(
A
)
V
CE(sat)
—I
C
V
BE(sat)
—I
C
Area of safe operation, horizontal operation ASO
100
100
50
I
C
/I
B
=3.5
I
C
/I
B
=3.5
f=64kHz, T
C
=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
30
40
10
10
3
30
1
1
T
C
=–25˚C
25˚C
100˚C
20
0.3
0.1
T
C
=–25˚C
0.1
10
0.03
25˚C
100˚C
<1mA
0.01
0.01
0
0.1
0.3
1
3
10
30
100
0.1
1
10
100
0
400
800
1200
1600
2000
Collector current I
C
(A)
Collector current I
C
(A)
Collector to emitter voltage V
CE
(V)
R
th(t)
—t
1000
100
Note: R
th
was measured at Ta=25˚C and under natural convection
(1) P
T
=10V
´
0.3A (3W) and without heat sink
(2) P
T
=10V
´
1.0A (10W) and with a 100
´
100
´
2mm Al heat sink
(1)
10
(2)
1
0.1
0.01
10
–3
10
–2
10
–1
1
10
10
2
10
3
10
4
Time t
(
s
)
2
10
–4
Plik z chomika:
jj63
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