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Dual rectifier diodes ultrafast
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV34 series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
V R = 300 V/ 400 V/ 500 V
• Fast switching
• Soft recovery characteristic
a1
a2
V F
£
1.05 V
• High thermal cycling performance
• Low thermal resistance
I O(AV) = 20 A
k
2
t rr
£
60 ns
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
Dual, common cathode, ultra-fast,
PIN
DESCRIPTION
epitaxial rectifier diodes intended
for use as output rectifiers in high
tab
1
anode 1
frequency switched mode power
supplies.
2
cathode
The BYV34 series is supplied in the
3
anode 2
conventional
leaded
SOT78
(TO220AB) package.
tab
cathode
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV34
-300 -400 -500
V RRM
Peak repetitive reverse voltage
-
300
400
500
V
V RWM
Crest working reverse voltage
-
300
400
500
V
V R
Continuous reverse voltage
T mb
£
138˚C
-
300
400
500
V
I O(AV)
Average rectified output current square wave;
d
= 0.5;
-
20
A
(both diodes conducting) 1
T mb
£
115 ˚C
I FRM
Repetitive peak forward current t = 25
s;
d
= 0.5;
-
20
A
per diode
T mb
£
115 ˚C
I FSM
Non-repetitive peak forward
t = 10 ms
-
120
A
current per diode.
t = 8.3 ms
-
132
A
sinusoidal; with reapplied
V RRM(max)
T stg
Storage temperature
-40
150
˚C
T j
Operating junction temperature
-
150
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-hs
Thermal resistance junction to per diode
-
-
2.4
K/W
heatsink
both diodes conducting
-
-
1.6
K/W
R th j-a
Thermal resistance junction to in free air.
-
60
-
K/W
ambient
1 Neglecting switching and reverse current losses
October 1998
1
Rev 1.400
ultrafast
1
3
m
199622124.011.png 199622124.012.png 199622124.013.png
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV34 series
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V F
Forward voltage
I F = 10 A; T j = 150˚C
-
0.87 1.05
V
I F = 20 A
-
1.10 1.35
V
I R
Reverse current
V R = V RRM
-
10
50
m
A
V R = V RRM ; T j = 100 ˚C
-
0.2
0.6
mA
Q s
Reverse recovery charge
I F = 2 A to V R
³
30 V;
-
50
60
nC
dI F /dt = 20 A/
m
s
t rr
Reverse recovery time
I F = 1 A to V R
30 V;
-
50
60
ns
³
dI F /dt = 100 A/
m
s
I rrm
Peak reverse recovery current I F = 10 A to V R
³
30 V;
-
4.0
5.0
A
dI F /dt = 50 A/
s; T j = 100˚C
m
V fr
Forward recovery voltage
I F = 10 A; dI F /dt = 10 A/
m
s
-
2.5
-
V
dI
20
PF / W
BYV34
Tmb(max) / C
102
I F
F
Vo = 0.9400 V
dt
Rs = 0.0100 Ohms
D = 1.0
t rr
15
114
0.5
time
10
126
0.2
0.1
t p
I
t p
D =
Q s
100%
T
10%
5
138
I
R
I rrm
T
t
150
0
0
5
10
15
IF(AV) / A
Fig.1. Definition of t rr , Q s and I rrm
Fig.3. Maximum forward dissipation P F = f(I F(AV) ) per
diode; square wave where I F(AV) =I F(RMS) x
Ö
D.
I F
12
PF / W
BYV34
Tmb(max) / C
121.1
Vo = 0.94 V
conduction
angle
form
factor
a = 1.57
Rs = 0.01 Ohms
degrees
30
60
90
120
180
a
10
126
4
2.8
2.2
1.9
1.57
1.9
8
2.2
130.8
2.8
time
6
4
135.6
V F
4
140.4
V fr
2
145.2
V F
0
0
2
4
6
8
10
150
time
IF(AV) / A
Fig.2. Definition of V fr
Fig.4. Maximum forward dissipation P F = f(I F(AV) ) per
diode; sinusoidal current waveform where a = form
factor = I F(RMS) / I F(AV) .
October 1998
2
Rev 1.400
ultrafast
199622124.014.png 199622124.001.png 199622124.002.png 199622124.003.png 199622124.004.png
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV34 series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100
100
1A
2 A
10
10
Tj = 25 C
Tj = 100 C
1
1
10
100
1
1.0
10
100
dIF/dt (A/us)
-dIF/dt (A/us)
Fig.5. Maximum t rr at T j = 25˚C and 100˚C; per diode
Fig.8. Maximum Q s at T j = 25˚C; per diode.
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A
1
1
IF=1A
0.1
0.1
0.01
P
t p
D =
t p
D
T
Tj = 25 C
Tj = 100 C
T
t
0.01
0.001
1
10
100
1us
10us 100us 1ms 10ms 100ms 1s
10s
-dIF/dt (A/us)
pulse width, tp (s)
BYV32E
Fig.6. Maximum I rrm at T j = 25˚C and 100˚C; per
diode.
Fig.9. Transient thermal impedance per diode
Z th j-mb = f(t p )
30
IF / A
BYV34
Tj = 25 C
Tj = 150 C
25
20
15
typ
max
10
5
0
0
0.5
1
1.5
2
VF / V
Fig.7. Typical and maximum forward characteristic
October 1998
3
Rev 1.400
ultrafast
199622124.005.png
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV34 series
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
(2x )
123
0,9 max (3x)
0,6
2,54 2,54
2,4
Fig.10. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.400
ultrafast
199622124.006.png 199622124.007.png 199622124.008.png
Philips Semiconductors
Product specification
Dual rectifier diodes
BYV34 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
5
Rev 1.400
ultrafast
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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