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DISCRETE SEMICONDUCTORS
DATA SHEET
KM110B/2
Magnetic field sensor
Preliminary specification
File under Discrete Semiconductors, SC17
November 1994
Philips Semiconductors
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KM110B/2
DESCRIPTION
The KM110B/2 is a sensitive magnetic field sensor,
employing the magnetoresistive effect in thin-film
permalloy. A Ferroxdure FXD100 magnet mounted on the
back of the sensor package provides an auxiliary field of
3.6 kA/m in the x-direction of the sensor.
y
Typical applications for the KM110B/2 are current
measurement, linear position measurement, rotational
speed detection of magnetic pole wheels as well as
magnetic field measurement. The sensor can be operated
at any frequency between DC and 1 MHz.
x
MLB874
1234
PINNING
PIN
SYMBOL
DESCRIPTION
1
+V
O
output voltage
2
GND
ground
Marking: KMZ10B PHDxx.
3
-
V
O
output voltage
Fig.1 Simplified outline.
4
+V
CC
supply voltage
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MIN.
TYP.
MAX.
UNIT
V
CC
DC supply voltage
-
5
-
V
T
bridge
bridge operating temperature
-
40
-
150
°
C
H
y
magnetic field strength
-
2.2
-
+2.2
kA/m
S
sensitivity
-
3.6
-
¤
kA m
¤
R
bridge
bridge resistance
1.6
2.1
2.6
k
W
V
offset
offset voltage
-
0.5
-
+0.5
mV/V
CIRCUIT DIAGRAM
MLB875
handbook, full pagewidth
4
3
2
1
V
CC
–V
O
GND
+V
O
Fig.2 Simplified circuit diagram.
November 1994
2
mV V
-----------------
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KM110B/2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CC
DC supply voltage
-
12
V
P
tot
total power dissipation
up to T
amb
= 130
°
C;
-
120
mW
see Fig.5
T
stg
storage temperature
note 1
-
40
+150
°
C
T
bridge
bridge operating temperature
-
40
+150
°
C
Note
1. Maximum operating temperature of the thin-film permalloy.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
180
K/W
CHARACTERISTICS
T
amb
=25
°
C; V
CC
= 5 V unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
H
y
magnetic field strength
note 1
-
2.2
-
+2.2
kA/m
S
sensitivity
open circuit; notes 2 and 3
2.9
3.6.
4.4
¤
kA m
¤
TCV
O
temperature coefficient of
output voltage
V
CC
=
-
5V;
-
-
0.4
-
%/K
T
amb
=
-
25 to +125
°
C
I
CC
= 3 mA;
T
amb
=
-
25 to +125
°
C
-
-
0.1
-
%/K
R
bridge
bridge resistance
1.6
-
2.6
k
W
TCR
bridge
temperature coefficient of
bridge resistance
T
bridge
=
-
25 to +125
°
C
-
0.3
-
%/K
V
offset
offset voltage
-
0.5
-
+0.5
mV/V
TCV
offset
temperature coefficient of
offset voltage
T
bridge
=-
25 to +125
°
C
-
5
±
1.5
5
(
m
V/V)/K
FL
linearity deviation of output
voltage
H
y=
0to
±
1 kA/m
-
-
0.5
%
×
FS
H
y=
0to
±
1.6 kA/m
-
-
1.7
%
×
FS
H
y
=0to
±
2 kA/m
-
-
2.0
%
×
FS
FH
hysteresis of output voltage
-
-
0.5
%
×
FS
f
operating frequency
note 4
0
-
1
MHz
November 1994
3
mV V
-----------------
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KM110B/2
Notes to the characteristics
1. Magnet (Ferroxdure 100) delivers an auxiliary field of
H
x
= 3.6 kA/m (temperature coefficient:
-
0.2 %/K).
Above 110
C the auxiliary field H
x
will be <3.0 kA/m;
stable sensor operation may be threatened by
disturbing magnetic fields.
°
handbook, halfpage
S
M
Hy
N
S
(
V
O
at H
y
=
1.6 kA/m
–
1.6 V
CC
)
(
V
O
at H
y
=
0
)
Hx
2.
S
=
.
-----------------------------------------------------------------------------------------------------------------
´
3. The sensitivity increases and decreases linear with the
supply voltage, thus the static output voltage is directly
proportional to the supply voltage.
4. Sensor bridge response only. When sensing high
speed rotation, the operating frequency may be
reduced due to eddy current effects.
4321
MBD882
M = direction of magnetization.
N, S = magnetic poles.
Fig.3 Principle of magnetization.
MBD885
MBD892
125
8
handbook, halfpage
handbook, halfpage
P
tot
V
(mV/V)
(mW)
100
4
75
0
50
–4
25
–8
0
0
50
100
150
200
–2
–1
0
1
2
T
amb
( C)
H
y
(kA/m)
T
amb
=25
C; V
offset
=0.
Fig.4 Sensor output characteristic.
Fig.5 Power derating curve.
November 1994
4
O
°
Philips Semiconductors
Preliminary specification
Magnetic field sensor
KM110B/2
PACKAGE OUTLINE
handbook, full pagewidth
0.35
4.8 max
1.8
max
0.75
0.66
0.56
4.6
4.4
0.65
0.55
1.15
(2)
2.35
2.25
chip
5.2
max
2.0
max
(1)
12.7
max
1234
1.25
0.48
0.40
MBD881
0.4
min
(3x)
Dimensions in mm.
(1) Terminal dimensions uncontrolled within this area.
(2) Position of sensor chip.
Fig.6 Outline of KM110B/2.
November 1994
5
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