mrf15090.pdf

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199640818 UNPDF
SEMICONDUCTOR TECHNICAL DATA
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by MRF15090/D
The RF Line
Designed for 26 volts microwave large–signal, common emitter, class A and
class AB linear amplifier applications in industrial and commercial FM/AM
equipment operating in the range 1400–1600 MHz.
•
Specified 26 Volts, 1490 MHz, Class AB Characteristics
Output Power — 90 Watts (PEP)
Gain — 7.5 dB Min @ 90 Watts (PEP)
Collector Efficiency — 30% Min @ 90 Watts (PEP)
Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP)
90 W, 1.5 GHz
RF POWER TRANSISTOR
NPN SILICON
•
Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, V CE = 24 Vdc,
I C = 5 Adc
•
Characterized with Series Equivalent Large–Signal Parameters from
1400–1600 MHz
•
Characterized with Small–Signal S–Parameters from 1000–2000 MHz
•
Silicon Nitride Passivated
•
100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load
VSWR @ 28 Vdc, and Rated Output Power
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to
Metal Migration
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
CASE 375A–01, STYLE 1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
25
Vdc
Collector–Emitter Voltage
V CES
60
Vdc
Emitter–Base Voltage
V EBO
4
Vdc
Collector–Current — Continuous @ T J(max) = 150 ° C
I C
15
Adc
Total Device Dissipation @ T C = 25 ° C
Derate above 25 ° C
P D
250
1.43
Watts
W/ ° C
Storage Temperature Range
T stg
– 65 to +150
° C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
q JC
0.70
° C/W
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = 50 mAdc, I B = 0)
V (BR)CEO
25
28
—
Vdc
Collector–Emitter Breakdown Voltage
(I C = 50 mAdc, V BE = 0)
V (BR)CES
60
65
—
Vdc
Collector–Emitter Breakdown Voltage
(I C = 50 mAdc, R BE = 100
V (BR)CER
30
—
—
Vdc
W
)
(continued)
REV 7
W
MOTOROLA RF DEVICE DATA
MRF15090
1
R
Motorola, Inc. 1998
199640818.010.png 199640818.011.png 199640818.012.png
ELECTRICAL CHARACTERISTICS — continued (T C = 25 ° C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS — continued
Emitter–Base Breakdown Voltage
(I E = 5 mAdc, I C = 0)
V (BR)EBO
4
4.8
—
Vdc
Collector Cutoff Current
(V CE = 30 Vdc, V BE = 0)
I CES
—
—
10
mAdc
ON CHARACTERISTICS
DC Current Gain
(I CE = 1 Adc, V CE = 5 Vdc)
h FE
20
40
80
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V CB = 26 Vdc, I E = 0, f = 1 MHz) –
For Information Only. This Part Is Collector Matched.
C ob
—
52
—
pF
FUNCTIONAL TESTS (Figure 12)
Common–Emitter Amplifier Power Gain
(V CC = 26 Vdc, P out = 90 W (PEP), I CQ = 250 mA,
f 1 = 1490 MHz, f 2 = 1490.1 MHz)
G pe
7.5
8.3
—
dB
Collector Efficiency
(V CC = 26 Vdc, P out = 90 W (PEP), I CQ = 250 mA,
f 1 = 1490 MHz, f 2 = 1490.1 MHz)
h
30
36
—
%
Intermodulation Distortion
(V CC = 26 Vdc, P out = 90 W (PEP), I CQ = 250 mA,
f 1 = 1490 MHz, f 2 = 1490.1 MHz)
IMD
—
–32
–28
dBc
Input Return Loss
(V CC = 26 Vdc, P out = 90 W (PEP), I CQ = 250 mA,
f 1 = 1490 MHz, f 2 = 1490.1 MHz)
IRL
12
15
—
dB
Load Mismatch
(V CC = 28 Vdc, P out = 90 W (PEP), I CQ = 250 mA,
f 1 = 1490 MHz, f 2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)
y
No Degradation in Output Power
MRF15090
2
MOTOROLA RF DEVICE DATA
199640818.013.png 199640818.001.png 199640818.002.png
TYPICAL CHARACTERISTICS
120
9.0
100
P in = 15 W
100
G pe
P out
80
80
8.5
10 W
60
60
40
5 W
40
8.0
20
V CC = 26 Vdc
I CQ = 250 mA
f = 1490 MHz Single Tone
20
V CC = 26 Vdc
I CQ = 250 mA
Single Tone
0
7.5
0
0
4
8
12
16
20
1400
1420
1440
1460
1480
1500
1520
1540
1560
1580
1600
P in , INPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 1. Output Power & Power Gain
versus Input Power
Figure 2. Output Power versus Frequency
–20
10
50
9
3rd Order
8
G pe
40
–30
7
5th
6
h
30
3.0
–40
5
2.5
7th
4
P out = 90 W (PEP)
V CC = 26 Vdc
I CQ = 250 mA
20
V CC = 26 Vdc
I CQ = 250 mA
f 1 = 1490 MHz
f 2 = 1490.1 MHz
3
2.0
–50
2
10
1.5
VSWR
1
–60
0
0
1.0
0
20
40
60
80
100
120
1400
1420
1440
1460
1480
1500
1520
1540
1560
P out , OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
Figure 3. Intermodulation Distortion
versus Output Power
Figure 4. Performance in Broadband Circuit
–20
10
–25
I CQ = 100 mA
9
I CQ = 750 mA
–30
8
250 mA
500 mA
–35
7
–40
6
500 mA
250 mA
–45
5
V CC = 26 Vdc
f 1 = 1490 MHz
f 2 = 1490.1 MHz
V CC = 26 Vdc
f 1 = 1490 MHz
f 2 = 1490.1 MHz
–50
4
–55
750 mA
3
100 mA
–60
0.1
1
10
100
2
0.1
1
10
100
P out , OUTPUT POWER (WATTS) PEP
P out , OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion
versus Output Power
Figure 6. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
MRF15090
3
199640818.003.png 199640818.004.png
TYPICAL CHARACTERISTICS
60
9
–10
50
40
8.5
–15
G pe
30
Fundamental
8
–20
20
10
7.5
–25
3rd Order
0
IMD
V CC = 24 Vdc
I C = 5.0 Adc
f 1 = 1490 MHz
f 2 = 1490.1 MHz
7
–30
–10
I CQ = 250 mA
f 1 = 1490 MHz
f 2 = 1490.1 MHz
–20
–30
6.5
–35
–40
6
–40
10
15
20
25
30
35
40
45
50
18
20
22
24
26
28
P in , INPUT POWER (dBm)
V CC , COLLECTOR SUPPLY VOLTAGE (Vdc)
Figure 7. Class A Third Order Intercept Point
Figure 8. Power Gain and Intermodulation
Distortion versus Supply Voltage
10
10 9
8
MTBF Limited
10 8
T flange = 75 ° C
6
T flange = 100
°
C
10 7
4
2
10 6
T J = 175 ° C
0
10 5
0
4
8
12
16
20
24
28
100
120
140
T J , JUNCTION TEMPERATURE ( ° C)
160
180
200
220
240
260
V CE , COLLECTOR VOLTAGE (Vdc)
Figure 9. DC Safe Operating Area
Figure 10. MTBF Factor versus
Junction Temperature
The graph above displays calculated MTBF in hours x ampere 2
emitter current. Life tests at elevated temperatures have correlated
to better than
±
MRF15090
4
MOTOROLA RF DEVICE DATA
10% of the theoretical prediction for metal failure.
Divide MTBF Factor by I C 2 for MTBF in a particular application.
199640818.005.png 199640818.006.png 199640818.007.png 199640818.008.png
f = 1.4 GHz
1.45
1.5
1.55
Z in
1.6
1.6
1.55
Z OL *
1.5
1.45
Z o = 10 W
f = 1.4 GHz
f
(MHz)
Z in
( W )
Z OL *
( W )
Z in = Input impedance is a balanced base to
base measurement.
1400
3.28 + j9.07
4.62 + j2.23
1450
3.85 + j10.4
4.35 + j3.41
Z OL * = Conjugate of optimum load impedance
collector to collector into which the device
operates at a given output power, bias
current, voltage and frequency.
1500
4.55 + j11.4
4.08 + j3.60
1550
5.45 + j11.9
3.80 + j3.78
1600
6.20 + j12.2
3.55 + j3.84
Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ P out = 90 Watts (PEP),
V CC = 26 Volts, I CQ = 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz
Table 1. Common Emitter S–Parameters (for One Side of Push–Pull MRF15090) at V CE = 24 Vdc, I C = 2.5 Adc
f
S 11
S 21
S 12
S 22
f
MHz
|S 11 |
f
|S 21 |
f
|S 12 |
f
|S 22 |
f
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
0.999
0.999
0.994
0.992
0.994
0.986
0.982
0.973
0.957
0.938
0.903
0.857
0.821
0.837
0.872
0.901
0.920
0.940
0.954
0.965
0.971
172
171
170
170
169
168
167
166
164
163
162
163
165
169
170
170
170
169
169
168
167
0.164
0.179
0.196
0.216
0.241
0.269
0.306
0.351
0.408
0.483
0.571
0.651
0.673
0.623
0.529
0.437
0.363
0.309
0.265
0.232
0.205
108
103
97
92
86
80
73
66
56
44
29
10
–14
–37
–56
–70
–81
–90
–98
–104
–110
0.006
0.007
0.007
0.008
0.008
0.009
0.010
0.011
0.012
0.013
0.014
0.014
0.013
0.011
0.009
0.008
0.007
0.008
0.008
0.009
0.010
72
69
66
63
62
57
51
45
33
22
7
–13
–40
–67
–104
–138
–165
173
150
139
132
0.957
0.956
0.948
0.940
0.935
0.924
0.915
0.905
0.888
0.876
0.859
0.855
0.877
0.902
0.922
0.931
0.932
0.930
0.932
0.930
0.929
173
172
172
171
171
170
170
170
170
170
171
173
174
174
173
172
171
170
169
169
168
MOTOROLA RF DEVICE DATA
MRF15090
5
199640818.009.png

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