mrf176gu.pdf

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SEMICONDUCTOR TECHNICAL DATA
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by MRF176GU/D
The RF MOSFET Line
N–Channel Enhancement–Mode
Designed for broadband commercial and military applications using push pull
circuits at frequencies to 500 MHz. The high power, high gain and broadband
performance of these devices makes possible solid state transmitters for FM
broadcast or TV channel frequency bands.
•
Electrical Performance
MRF176GU @ 50 V, 400 MHz (“U” Suffix)
Output Power — 150 Watts
Power Gain — 14 dB Typ
Efficiency — 50% Typ
MRF176GV @ 50 V, 225 MHz (“V” Suffix)
Output Power — 200 Watts
Power Gain — 17 dB Typ
Efficiency — 55% Typ
200/150 W, 50 V, 500 MHz
N–CHANNEL MOS
BROADBAND
RF POWER FETs
D
•
100% Ruggedness Tested At Rated Output Power
•
Low Thermal Resistance
G
•
Low C rss — 7.0 pF Typ @ V DS = 50 V
S
(FLANGE)
G
CASE 375–04, STYLE 2
MAXIMUM RATINGS
D
Rating
Symbol
Value
Unit
Drain–Source Voltage
V DSS
125
Vdc
Gate–Source Voltage
V GS
± 40
Vdc
Drain Current — Continuous
I D
16
Adc
Total Device Dissipation @ T C = 25
C
P D
400
2.27
Watts
W/
Derate above 25
°
C
°
C
Storage Temperature Range
T stg
– 65 to +150
°
C
Operating Junction Temperature
T J
200
° C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
° C/W
Handling and Packaging — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Thermal Resistance, Junction to Case
R
q JC
0.44
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Drain–Source Breakdown Voltage
(V GS = 0, I D = 100 mA)
V (BR)DSS
125
—
—
Vdc
Zero Gate Voltage Drain Current
(V DS = 50 V, V GS = 0)
I DSS
—
—
2.5
mAdc
Gate–Body Leakage Current
(V GS = 20 V, V DS = 0)
I GSS
—
—
1.0
m Adc
NOTE:
1. Each side of device measured separately.
REV 8
W
MOTOROLA RF DEVICE DATA
MRF176GU MRF176GV
1
°
Motorola, Inc. 1995
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ELECTRICAL CHARACTERISTICS — continued (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS (1)
Gate Threshold Voltage (V DS = 10 V, I D = 100 mA)
V GS(th)
1.0
3.0
6.0
Vdc
Drain–Source On–Voltage (V GS = 10 V, I D = 5.0 A)
V DS(on)
1.0
3.0
5.0
Vdc
Forward Transconductance (V DS = 10 V, I D = 2.5 A)
g fs
2.0
3.0
—
mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (V DS = 50 V, V GS = 0, f = 1.0 MHz)
C iss
—
180
—
pF
Output Capacitance (V DS = 50 V, V GS = 0, f = 1.0 MHz)
C oss
—
100
—
pF
Reverse Transfer Capacitance (V DS = 50 V, V GS = 0, f = 1.0 MHz)
C rss
—
6.0
—
pF
FUNCTIONAL CHARACTERISTICS — MRF176GV (2) (Figure 1)
Common Source Power Gain
(V DD = 50 Vdc, P out = 200 W, f = 225 MHz, I DQ = 2.0 x 100 mA)
G ps
15
17
—
dB
Drain Efficiency
(V DD = 50 Vdc, P out = 200 W, f = 225 MHz, I DQ = 2.0 x 100 mA)
h
50
55
—
%
Electrical Ruggedness
(V DD = 50 Vdc, P out = 200 W, f = 225 MHz, I DQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
y
No Degradation in Output Power
NOTES:
1. Each side of device measured separately.
2. Measured in push–pull configuration.
R1
+
BIAS 0 – 6 V
C8
C9
C10
50 V
–
C3
C4
R2
D.U.T.
T2
T 1
C5
C1
C2
C6
C7
C1 — Arco 404, 8.0 – 60 pF
C2, C3, C6, C8 — 1000 pF Chip
C4, C9 — 0.1
H, Total Inductance
R1 — 100 Ohms, 1/2 W
R2 — 1.0 kOhms, 1/2 W
T1 — 4:1 Impedance Ratio RF Transformer.
T1 — Can Be Made of 25 Ohm Semirigid
T1 — Co–Ax, 47 – 62 Mils O.D.
T2 — 1:4 Impedance Ratio RF Transformer.
T2 — Can Be Made of 25 Ohm Semirigid
T2 — Co–Ax, 62 – 90 Mils O.D.
NOTE: For stability, the input transformer T1 should be loaded
NOTE: with ferrite toroids or beads to increase the common
NOTE: mode inductance. For operation below 100 MHz. The
NOTE: same is required for the output transformer.
m
F Chip
C5 — 180 pF Chip
C7 — Arco 403, 3.0 – 35 pF
C10 — 0.47
m
F Chip, Kemet 1215 or Equivalent
L1 — 10 Turns AWG #16 Enameled Wire,
L1 — Close Wound, 1/4
m
I.D.
Board material — .062 , fiberglass (G10),
Two sided, 1 oz. copper, e r 5
Unless otherwise noted, all chip capacitors
are ATC Type 100 or Equivalent
,
Figure 1. 225 MHz Test Circuit
MRF176GU MRF176GV
2
MOTOROLA RF DEVICE DATA
L2 — Ferrite Beads of Suitable Material
L2 — for 1.5 – 2.0
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ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
FUNCTIONAL CHARACTERISTICS — MRF176GU (1) (Figure 2)
Common Source Power Gain
(V DD = 50 Vdc, P out = 150 W, f = 400 MHz, I DQ = 2.0 x 100 mA)
G ps
12
14
—
dB
Drain Efficiency
(V DD = 50 Vdc, P out = 150 W, f = 400 MHz, I DQ = 2.0 x 100 mA)
h
45
50
—
%
Electrical Ruggedness
(V DD = 50 Vdc, P out = 150 W, f = 400 MHz, I DQ = 2.0 x 100 mA,
VSWR 10:1 at all Phase Angles)
y
No Degradation in Output Power
NOTE:
1. Measured in push–pull configuration.
A
B
C17
L7
C18
L8
BIAS
C19
50 V
C11
C12
R1
C13
C15
R2
L1
C9
C1
Z1
Z3
L3
B1
C6
C3
C4
C5
C8
B2
C7
L2
C10
Z2
Z4
L4
C2
D.U.T.
R3
L6
A
B
C14
C16
B1 — Balun, 50 W Semirigid Coax .086 OD 2 , Long
B2 — Balun, 50 W Semirigid Coax .141 OD 2 , Long
C1, C2, C9, C10 — 270 pF ATC Chip Capacitor
C3 — 15 pF ATC Chip Cap
C4, C8 — 1.0 – 20 pF Piston Trimmer Cap
C5 — 27 pF ATC Chip Cap
C6, C7 — 22 pF Mini Unelco Capacitor
C11, C13, C14, C15, C16 — 0.01 m F Ceramic Capacitor
C12 — 1.0 m F 50 V Tantalum Cap
C17, C18 — 680 pF Feedthru Capacitor
C19 — 10 m F 100 V Tantalum Cap
L1, L2 — Hairpin Inductor #18 W
L3, L4 — Hairpin Inductor #18 W
.400 ,
L5, L6 — 13T #18 W .250 ID
L7 — Ferroxcube VK–200 20/4B
L8 — 3T #18 W .340 ID
R1 — 1.0 k
.200
1/4 W Resistor
R2, R3 — 10 k
W
1/4 W Resistor
Z1, Z2 — Microstrip Line .400L x .250W
Z3, Z4 — Microstrip Line .450L x .250W
W
.200
,
.200 ,
Ckt Board Material — .060 , teflon–fiberglass, copper clad both sides, 2 oz. copper,
e r = 2.55
Figure 2. 400 MHz Test Circuit
MOTOROLA RF DEVICE DATA
MRF176GU MRF176GV
3
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TYPICAL CHARACTERISTICS
4000
100
V DS = 30 V
3000
15 V
2000
10
1000
T C = 25 ° C
0
0
1
2
3
4
5
6
7
8
9
10
1
2
10
50
200
I, DRAIN CURRENT (AMPS)
V DS , DRAIN–SOURCE VOLTAGE (VOLTS)
Figure 3. Common Source Unity Current Gain*
Gain–Frequency versus Drain Current
Figure 4. DC Safe Operating Area
* Data shown applies to each half of MRF176GU/GV
INPUT AND OUTPUT IMPEDANCE
MRF176GU/GV
V DD = 50 V, I DQ = 2 x 100 mA
Z in
f
MHz
Z in
OHMS
Z OL *
OHMS
400
300
(P out = 150 W)
225
f = 500 MHz
225
300
400
500
2.05 – j2.50
2.00 – j1.10
1.85 + j0.75
1.60 + j2.70
6.50 – j3.50
4.80 – j3.10
3.00 – j1.90
2.60 + j0.10
400
f = 500 MHz
150
Z OL *
(P out = 200 W)
225
300
100
30
50
100
150
225
7.50 – j6.50
5.50 – j7.00
3.20 – j6.00
2.50 – j4.80
2.05 – j2.50
17.00 – j4.00
14.00 – j5.00
11.00 – j5.20
8.20 – j5.00
5.00 – j4.20
225
50
150
Z OL *
30
Z OL * = Conjugate of the optimum load
impedance into which the device output
operates at a given output power, voltage
and frequency.
NOTE: Input and output impedance values given are measured from gate to gate and drain to drain respectively.
100
Z o = 10
W
50
30
Figure 5. Series Equivalent Input/Output Impedance
MRF176GU MRF176GV
4
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS
500
30
200
C iss
25
P out = 200 W
100
C oss
20
50
V GS = 0 V
f = 1 MHz
15
150 W
20
V DS = 50 V
I DQ = 2 x 100 mA
C rss
10
10
5
0
10
20
30
40
50
5
5
10
20
50
100
200
500
V DS , DRAIN–SOURCE VOLTAGE (VOLTS)
f, FREQUENCY (MHz)
Figure 6. Capacitance versus Drain–Source Voltage*
Figure 7. Power Gain versus Frequency
* Data shown applies to each half of MRF176GU/GV
MRF176GV
300
320
V DD = 50 V
280
I DQ = 2 x 100 mA
f = 225 MHz
240
P in = 6 W
200
200
40 V
4 W
160
100
120
2 W
I DQ = 2 x 100 mA
f = 225 MHz
80
40
0
0
6
12
0
30
32
34
36
38
40
42
44
46
48
50
P in , POWER INPUT (WATTS)
V DS , SUPPLY VOLTAGE (VOLTS)
Figure 8. Power Input versus Power Output
Figure 9. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRF176GU MRF176GV
5
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