st173c.pdf

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173C-P1
Bulletin I25180 rev. A 04/94
ST173C..C SERIES
INVERTER GRADE THYRISTORS
Hockey Puk Version
Features
Metal case with ceramic insulator
International standard case TO-200AB (A-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
330A
TypicalApplications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (A-PUK)
Major Ratings and Characteristics
Parameters
ST173C..C
Units
I T(AV)
330
A
@ T hs
55
°C
I T(RMS)
610
A
@ T hs
25
°C
I TSM
@ 50Hz
4680
A
@ 60Hz
4900
A
I 2 t
@ 50Hz
110
KA 2 s
@ 60Hz
100
KA 2 s
V DRM /V RRM
1000 to1200
V
t q range
15 to 30
µs
T J
- 40 to 125
°C
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ST173C..C Series
Bulletin I25180 rev. A 04/94
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V DRM /V RRM , maximum
V RSM , maximum
I DRM /I RRM max.
Type number Code
repetitive peak voltage
non-repetitive peak voltage
@ T J = T J max.
V
V
mA
10
1000
1100
ST173C..C
40
12
1200
1300
Current Carrying Capability
Frequency
I TM
I TM
I TM
Units
180 o el
180 o el
100 m s
50Hz
760
660
1200
1030
5570
4920
400Hz
730
590
1260
1080
2800
2460
1000Hz
600
490
1200
1030
1620
1390
A
2500Hz
350
270
850
720
800
680
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
V DRM
V DRM
V DRM
Rise of on-state current di/dt
50
50
-
-
-
-
A/
m
s
Heatsink temperature
40
55
40
55
40
55
°C
Equivalent values for RC circuit
47 W / 0.22µF
47 W / 0.22µF
47 W / 0.22µF
On-state Conduction
Parameter
ST173C..C
Units Conditions
I T(AV) Max. average on-state current
330 (120)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
double side (single side) cooled
I T(RMS) Max. RMS on-state current
610
DC @ 25°C heatsink temperature double side cooled
I TSM
Max. peak, one half cycle,
4680
t = 10ms No voltage
non-repetitive surge current
4900
A
t = 8.3ms reapplied
3940
t = 10ms 100% V RRM
4120
t = 8.3ms reapplied
Sinusoidal half wave,
I 2 t
Maximum I 2 t for fusing
110
t = 10ms No voltage
Initial T J = T J max
100
t = 8.3ms reapplied
KA 2 s
77
t = 10ms 100% V RRM
71
t = 8.3ms reapplied
I 2
Ö t
Maximum I 2
Ö t for fusing
1100
KA 2
Ö s t = 0.1 to 10ms, no voltage reapplied
2
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ST173C..C Series
Bulletin I25180 rev. A 04/94
On-state Conduction
Parameter
ST173C..C Units Conditions
V TM
Max. peak on-state voltage
2.07
I TM = 600A, T J = T J max, t p = 10ms sine wave pulse
V T(TO)1 Low level value of threshold
voltage
V T(TO)2 High level value of threshold
voltage
1.55
V
(16.7% x
p
x I T(AV) < I <
p
x I T(AV) ), T J = T J max.
1.61
(I >
x I T(AV) ), T J = T J max.
r t 1
Low level value of forward
slope resistance
0.87
(16.7% x p x I T(AV) < I < p x I T(AV) ), T J = T J max.
m W
r t 2
High level value of forward
slope resistance
0.77
(I > p x I T(AV) ), T J = T J max.
I H
Maximum holding current
600
mA
T J = 25°C, I T > 30A
I L
Typical latching current
1000
T J = 25°C, V A = 12V, Ra = 6 W, I G = 1A
Switching
Parameter
ST173C..C Units Conditions
di/dt
Max. non-repetitive rate of rise
1000
A/µs
T J = T J max, V DRM = rated V DRM
of turned-on current
I TM = 2 x di/dt
T J = 25°C, V DM = rated V DRM , I TM = 50A DC, t p = 1µs
Resistive load, Gate pulse: 10V, 5 W source
T J = T J max, I TM = 300A, commutating di/dt = 20A/µs
V R = 50V, t p = 500µs, dv/dt: see table in device code
t d
Typical delay time
1.1
µs
Min Max
t q
Max. turn-off time
15
30
Blocking
Parameter
ST173C..C Units Conditions
dv/dt Maximum critical rate of rise of
500
V/ m s
T J = T J max. linear to 80% V DRM , higher value
off-state voltage
available on request
I RRM Max. peak reverse and off-state
I DRM leakage current
40
mA
T J = T J max, rated V DRM /V RRM applied
Triggering
Parameter
ST173C..C Units Conditions
P GM Maximum peak gate power
60
W J = T J max, f = 50Hz, d% = 50
P G(AV) Maximum average gate power
10
I GM
Max. peak positive gate current
10
A
T J = T J max, t p
£
5ms
+V GM Maximum peak positive
gate voltage
-V GM Maximum peak negative
gate voltage
20
V J = T J max, t p £ 5ms
5
I GT
Max. DC gate current required
to trigger
200
mA
T J = 25°C, V A = 12V, Ra = 6
W
V GT
Max. DC gate voltage required
to trigger
3
V
I GD
Max. DC gate current not to trigger
20
mA
T J = T J max, rated V DRM applied
V GD
Max. DC gate voltage not to trigger
0.25
V
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ST173C..C Series
Bulletin I25180 rev. A 04/94
Thermal and Mechanical Specification
Parameter
ST173C..C
Units Conditions
T J
Max. operating temperature range
-40 to 125
°C
T stg
Max. storage temperature range
-40 to 150
R thJ-hs Max. thermal resistance,
0.17
K/W
DC operation single side cooled
junction to heatsink
0.08
DC operation double side cooled
R thC-hs Max. thermal resistance,
0.033
K/W
DC operation single side cooled
case to heatsink
0.017
DC operation double side cooled
F
Mounting force, ± 10%
4900
N
(500)
(Kg)
wt
Approximate weight
50
g
Case style
TO - 200AB (A-PUK)
See Outline Table
D R thJ-hs Conduction
(The following table shows the increment of thermal resistence R thJ-hs when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
Units
Conditions
Single Side Double Side Single Side Double Side
180°
0.015
0.016
0.011
0.011
120°
0.018
0.019
0.019
0.019
90°
0.024
0.024
0.026
0.026
K/W
T J = T J max.
60°
0.035
0.035
0.036
0.037
30°
0.060
0.060
0.060
0.061
Ordering Information Table
Device Code
ST 17
3 C 12 C H K
1
1
2
3
4
5
6
7
8
9
10
1 - Thyristor
2 - Essential part number
3 - 3 = Fast turn off
4 - C = Ceramic Puk
5 - Voltage code: Code x 100 = V RRM (See Voltage Rating Table)
6 - C = Puk Case TO-200AB (A-PUK)
7 - Reapplied dv/dt code (for t q test condition)
8 -t q code
9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads)
1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads)
2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads)
3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads)
- Critical dv/dt:
None = 500V/µsec (Standard value)
L
dv/dt - t q combinations available
dv/dt (V/µs) 20
50
100 200 400
15
CL
--
--
--
--
18
CP
DP
EP FP * --
t q (µs)
20
CK
DK
EK FK * HK
25
CJ
DJ
EJ
FJ
HJ
30
--
DH
EH
FH
HH
* Standard part number.
All other types available only on request.
10
= 1000V/µsec (Special selection)
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ST173C..C Series
Bulletin I25180 rev. A 04/94
Outline Table
ANODE TO GATE
CREEPAGE DISTANCE: 7.62 (0.30) MIN.
STRIKE DISTANCE: 7.12 (0.28) MIN.
19 (0.75)
DIA. MAX.
0.3 (0.01) MIN.
13.7 / 14.4
(0.54 / 0.57)
0.3 (0.01) MIN.
19 (0.75)
DIA. MAX.
GATE TERM. FOR
1.47 (0.06) DIA.
PIN RECEPTACLE
38 (1.50) DIA MAX.
Case Style TO-200AB (A-PUK)
All dimensions in millimeters (inches)
2 HOLES 3.56 (0.14) x
1.83 (0.07) MIN. DEEP
6.5 (0.26)
4.75 (0.19)
25°± 5°
42 (1.65) MAX.
28 (1.10)
130
130
ST173C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
ST 173C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W
thJ-hs
120
120
110
110
100
100
90
90
Conduction Angle
80
Conduction Period
80
70
70
60
30°
50
60°
60
30°
60°
40
90°
180°
120°
50
90°
30
120°
180°
DC
40
20
0
40
80
120 160 200 240
0
50 100 150 200 250 300 350
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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