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NAND GATES
HCC4011B/12B/23B
HCF4011B/12B/23B
NAND GATES
. PROPAGATION DELAY TIME = 60ns (typ.) AT
C L = 50pF, V DD = 10V
. QUIESCENT CURRENT SPECIFIED TO 20V
. INPUT CURRENT OF 100nA AT 18V AND 25 ° C
FOR HCC DEVICE
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
FOR HCC DEVICE
. 100% TESTED FOR QUIESCENT CURRENT
. MEETS ALL REQUIREMENTS OF JEDEC TEN-
M1
(Micro Package)
C1
(Plastic Chip Carrier)
TATIVE STANDARD N o . 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
ORDER CODES :
HCC40XXBF
HCF40XXBM1
HCF40XXBEY
HCF40XXBC1
DESCRIPTION
The HCC4011B, HCC4012B and HCC4023B (ex-
tended temperature range) and HCF4011B,
HCF4012B and HCF4023B (intermediate tempera-
ture range) are monolithic, integrated circuit, avail-
able in 14-lead dual in-line plastic or ceramic
package and plastic micropackage.
The HCC/HCF4011B, HCC/HCF4012B and
HCC/HCF4023B NAND gates provide the system
designer with direct implementation of the NAND
function and supplement the existing family of
COS/MOS gates. All inputs and outputs are buf-
fered.
PIN CONNECTIONS
4011B
4012B
4023B
June 1989
1/12
QUAD 2 INPUT HCC/HCF 4011B
DUAL 4 INPUT HCC/HCF 4012B
TRIPLE 3 INPUT HCC/HCF 4023B
. BUFFERED INPUTS AND OUTPUTS
. 5V, 10V AND 15V PARAMETRIC RATINGS
21707227.002.png
HCC/HFC4011B/12B/23B
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V DD *
Supply Voltage : HCC Types
HCF Types
– 0.5 to + 20
– 0.5 to + 18
V
V
V i
Input Voltage
– 0.5 to V DD + 0.5
V
I I
DC Input Current (any one input)
±
10
mA
P tot
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T op = Full Package-temperature Range
200
mW
100
mW
T op
Operating Temperature : HCC Types
HCF Types
–55to+125
–40to+85
C
°
C
T stg
Storage Temperature
– 65 to + 150
C
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for external periods may affect device reliability.
* All voltage values are referred to V SS pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Value
Unit
V DD
Supply Voltage : HCC Types
HCF Types
3to18
3to15
V
V
V I
Input Voltage
0 to V DD
V
T op
Operating Temperature : HCC Types
HCF Types
–55to+125
–40to+85
C
°
C
2/12
°
°
°
21707227.003.png
HCC/HCF4011B/12B/23B
SCHEMATIC AND LOGIC DIAGRAMS
4011B
4012B
4023B
3/12
21707227.004.png
HCC/HFC4011B/12B/23B
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)
Test Conditions
Value
Symbol
Parameter
V I
V O
|I O |V DD
T Low *
25
°
C
T Hi g h *
Unit
(V)
(V)
(
m
A) (V)
Min. Max. Min. Typ. Max. Min. Max.
I L
Quiescent
Current
0/5
5
0.25
0.01 0.25
7.5
HCC
Types
0/10
10
0.5
0.01 0.5
15
0/15
15
1
0.01
1
30
0/20
20
5
0.02
5
150
m
A
0/ 5
5
1
0.01
1
7.5
HCF
Types
0/10
10
2
0.01
2
15
0/15
15
4
0.01
4
30
V OH
Output High
Voltage
0/5
< 1
5
4.95
4.95
4.95
0/10
< 1 10 9.95
9.95
9.95
V
0/15
< 1 15 14.95
14.95
14.95
V OL
Output Low
Voltage
5/0
< 1
5
0.05
0.05
0.05
10/0
< 1 10
0.05
0.05
0.05
V
15/0
< 1 15
0.05
0.05
0.05
V IH
Input High
Voltage
0.5/4.5 < 1
5
3.5
3.5
3.5
1/9
< 1 10
7
7
7
V
1.5/13.5 < 1 15
11
11
11
V IL
Input Low
Voltage
4.5/0.5 < 1
5
1.5
1.5
1.5
9/1
< 1 10
3
3
3
V
13.5/1.5 < 1 15
4
4
4
I OH
Output
Drive
Current
0/5
2.5
5
– 2
– 1.6 – 3.2
– 1.15
HCC
Types
0/5
4.6
5 – 0.64
– 0.51 – 1
– 0.36
0/10
9.5
10 – 1.6
– 1.3 – 2.6
– 0.9
0/15 13.5
15 – 4.2
– 3.4 – 6.8
– 2.4
mA
0/5
2.5
5 – 1.53
– 1.36 – 3.2
– 1.1
HCF
Types
0/5
4.6
5 – 0.52
– 0.44 – 1
– 0.36
0/10
9.5
10 – 1.3
– 1.1 – 2.6
– 0.9
0/15 13.5
15 – 3.6
– 3.0 – 6.8
– 2.4
I OL
Output
Sink
Current
0/5
0.4
5
0.64
0.51
1
0.36
HCC
Types
0/10
0.5
10
1.6
1.3
2.6
0.9
0/15
1.5
15
4.2
3.4
6.8
2.4
mA
0/5
0.4
5
0.52
0.44
1
0.36
HCF
Types
0/10
0.5
10
1.3
1.1
2.6
0.9
0/15
1.5
15
3.6
3.0
6.8
2.4
I IH ,I IL Input
Leakage
Current
HCC
Types
0/18
18
±
0.1
±
10 –5
±
0.1
±
1
Any Input
m
A
10 –5
HCF
Types
0/15
15
±
0.3
±
±
0.3
±
1
C I
Input Capacitance
Any Input
5
7.5
pF
*T LOW =–55
°
Cfor HCC device : – 40
°
Cfor HCF device.
C for HCF device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V DD = 5V, 2V min. with V DD = 10V, 2.5V with V DD = 15V.
°
C for HCC device : + 85
°
4/12
*T HIGH = + 125
21707227.005.png
HCC/HCF4011B/12B/23B
DYNAMIC ELECTRICAL CHARACTERISTICS (T amb =25
°
C, C L = 50pF, R L = 200k
W
,
typical temperature coefficient for all V DD values is 0.3%/
°
C, all input rise and fall times = 20ns)
Symbol
Parameter
Test Conditions
Value
Unit
V DD (V) Min. Typ. Max.
t PLH ,t PHL Propagation Delay Time
5
125
250
10
60
120
ns
15
45
90
t THL ,t TLH Transition Time
5
100
200
10
50
100
ns
15
40
80
TEST CIRCUITS
Quiescent Device Current.
Noise Immunity.
Input Leakage Current.
5/12
21707227.001.png

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