irfr3806pbf.pdf

Applications

High Efficiency Synchronous Rectification in

SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

IRFR3806PbF

IRFU3806PbF

HEXFET

Power MOSFET

V DSS

60V

R DS(on) typ.

12.6m

Ω

max.

15.8m Ω

Benefits

Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

I D

43A

Fully Characterized Capacitance and

Avalanche SOA

Enhanced body diode dV/dt and dI/dt

Capability

D-Pak

IRFR3806PbF

I-Pak

IRFU3806PbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Max.

170

Units

I D @ T C = 25°C

Continuous Drain Current, VGS @ 10V

I D @ T C = 100°C

Continuous Drain Current, V GS @ 10V

I DM

Pulsed Drain Current

P D @T C = 25°C

Maximum Power Dissipation

Linear Derating Factor

0.47

W/°C

V GS

Gate-to-Source Voltage

± 20

dv/dt

Peak Diode Recovery

-55 to + 175

V/ns

T J

Operating Junction and

°C

T STG Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Avalanche Characteristics

E AS (Thermally limited)

300

Single Pulse Avalanche Energy

7.1

I AR

Avalanche Current

E AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Typ.

Max.

Units

R θ JC

Junction-to-Case

–––

2.12

R θ CS

Case-to-Sink, Flat Greased Surface

0.50

–––

°C/W

R θ JA

Junction-to-Ambient

–––

www.irf.com

03/04/08

Static @ T J = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V GS = 0V, I D = 250µA

Reference to 25°C, I D = 5mA

V (BR)DSS

Drain-to-Source Breakdown Voltage

––– –––

∆ V (BR)DSS / ∆ T J Breakdown Voltage Temp. Coefficient

––– 0.075 ––– V/°C

R DS(on)

Static Drain-to-Source On-Resistance

––– 12.6 15.8 m Ω

V GS = 10V, I D = 25A

V DS = V GS , I D = 50µA

V DS = 60V, V GS = 0V

V DS = 48V, V GS = 0V, T J = 125°C

V GS(th)

Gate Threshold Voltage

2.0 ––– 4.0

I DSS

Drain-to-Source Leakage Current

––– –––

µA

––– ––– 250

I GSS

Gate-to-Source Forward Leakage

––– ––– 100

V GS = 20V

V GS = -20V

Gate-to-Source Reverse Leakage ––– ––– -100

Dynamic @ T J = 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

V DS = 10V, I D = 25A

I D = 25A

gfs

Forward Transconductance

––– –––

Q g

Total Gate Charge

–––

Q gs

Gate-to-Source Charge

––– 5.0 –––

V DS = 30V

Q gd

Gate-to-Drain ("Miller") Charge

––– 6.3 –––

V GS = 10V

Q sync

Total Gate Charge Sync. (Q g - Q gd )

––– 28.3 –––

I D = 25A, V DS =0V, V GS = 10V

R G(int)

Internal Gate Resistance

––– 0.79 –––

Ω

t d(on)

Turn-On Delay Time

––– 6.3 –––

V DD = 39V

t r

Rise Time

–––

I D = 25A

R G = 20 Ω

t d(off)

Turn-Off Delay Time

–––

t f

Fall Time

–––

V GS = 10V

C iss

Input Capacitance

––– 1150 –––

V GS = 0V

V DS = 50V

ƒ = 1.0MHz

V GS = 0V, V DS = 0V to 60V

C oss

Output Capacitance

––– 130 –––

C rss

Reverse Transfer Capacitance

–––

C oss eff. (ER) Effective Output Capacitance (Energy Related)

––– 190 –––

C oss eff. (TR) Effective Output Capacitance (Time Related)

––– 230 –––

Diode Characteristics

Symbol Parameter

Min. Typ. Max. Units

Conditions

I S

Continuous Source Current

––– –––

MOSFET symbol

showing the

(Body Diode)

I SM

Pulsed Source Current

––– ––– 170

integral reverse

p-n junction diode.

(Body Diode)

V SD

Diode Forward Voltage

––– ––– 1.3

T J = 25°C, I S = 25A, V GS = 0V

t rr

Reverse Recovery Time

–––

ns T J = 25°C

V R = 51V,

–––

T J = 125°C

I F = 25A

Q rr

Reverse Recovery Charge

–––

nC T J = 25°C

di/dt = 100A/µs

–––

T J = 125°C

I RRM

Reverse Recovery Current

––– 1.4 –––

A T J = 25°C

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by T Jmax , starting T J = 25°C, L = 0.23mH

R G = 25 Ω , I AS = 25A, V GS =10V. Part not recommended for

use above this value.

C oss eff. (TR) is a fixed capacitance that gives the same charging time

as C oss while V DS is rising from 0 to 80% V DSS .

C oss eff. (ER) is a fixed capacitance that gives the same energy as

C oss while V DS is rising from 0 to 80% V DSS .

I SD ≤

25A, di/dt

≤

1580A/µs, V DD ≤

V (BR)DSS , T J ≤

175°C.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

www.irf.com

When mounted on 1" square PCB (FR-4 or G-10 Material). For recom

mended footprint and soldering techniques refer to application note #AN-994.

R θ is measured at T J approximately 90°C.

1000

100

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

100

VGS

TOP 15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

BOTTOM

4.5V

BOTTOM

4.5V

60µs PULSE WIDTH

Tj = 25°C

60µs PULSE WIDTH

Tj = 175°C

0.1

100

0.1

100

V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

2.5

I D = 25A

V GS = 10V

100

2.0

T J = 175°C

1.5

T J = 25°C

1.0

V DS = 25V

≤ 60µs PULSE WIDTH

0.1

0.5

-60 -40 -20 0 20 40 60 80 100120140160180

T J , Junction Temperature (°C)

V GS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

10000

12.0

V GS = 0V, f = 1 MHZ

C iss = C gs + C gd , C ds SHORTED

C rss = C gd

C oss = C ds + C gd

I D = 25A

10.0

V DS = 48V

V DS = 30V

V DS = 12V

C iss

1000

8.0

C oss

6.0

100

C rss

4.0

2.0

0.0

100

V DS , Drain-to-Source Voltage (V)

Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

www.irf.com

≤

1000

OPERATION IN THIS AREA

LIMITED BY R DS (on)

100

100µsec

T J = 175°C

1msec

T J = 25°C

1 0msec

Tc = 25°C

Tj = 175°C

Single Pulse

V GS = 0V

0.1

0.0

0.5

1.0

1.5

2.0

100

V SD , Source-to-Drain Voltage (V)

V DS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

Id = 5mA

100

125

150

175

-60 -40 -20 0 20 40 60 80 100120140160180

T J , Temperature ( °C )

T C , Case Temperature (°C)

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10. Drain-to-Source Breakdown Voltage

0.4

300

0.3

250

I D

TOP 2.8A

5.1A

BOTTOM 25A

0.3

200

0.2

150

0.2

0.1

100

0.1

0.0

-10 0

10 20 30 40 50 60 70

100

125

150

175

V DS, Drain-to-Source Voltage (V)

Starting T J , Junction Temperature (°C)

Fig 11. Typical C OSS Stored Energy

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

www.irf.com

D = 0.50

0.20

0.10

0.05

R 1

R 2

R 3

Ri (°C/W) τ i (sec)

0.6086 0.00026

0.9926 0.001228

0.5203 0.00812

0.1

R 1

R 2

R 3

τ J

0.02

0.01

τ C

τ J

τ 1

τ 2

τ 3

τ 2

τ 3

0.01

Ci= τ i / Ri

τ i / Ri

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t 1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

Duty Cycle = Single Pulse

0.01

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming

∆

Tj = 150°C and

Tstart =25°C (Single Pulse)

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming

∆Τ

j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T jmax . This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT jmax is not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.

4. P D (ave) = Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I av = Allowable avalanche current.

TOP Single Pulse

BOTTOM 1.0% Duty Cycle

I D = 25A

T = Allowable rise in junction temperature, not to exceed T jmax (assumed as

25°C in Figure 14, 15).

t av = Average time in avalanche.

D = Duty cycle in avalanche = t av ·f

Z thJC (D, t av ) = Transient thermal resistance, see Figures 13)

P D (ave) = 1/2 ( 1.3·BV·I av ) =

T/ Z thJC

100

125

150

175

I av = 2 T/ [1.3·BV·Z th ]

E AS (AR) = P D (ave) ·t av

Starting T J , Junction Temperature (°C)

Fig 15. Maximum Avalanche Energy vs. Temperature

www.irf.com

∆

Plik z chomika:

Inne pliki z tego folderu:

Inne foldery tego chomika: