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BC846; BC847; BC848 NPN general purpose transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BC846; BC847; BC848
NPN general purpose transistors
Product specification
Supersedes data of 1999 Apr 23
2002 Feb 04
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 65 V).
1
base
2
emitter
APPLICATIONS
3
collector
·
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC856, BC857 and BC858.
handbook, halfpage
3
3
MARKING
TYPE NUMBER
MARKING CODE
(1)
1
BC846
1D*
2
BC846A
1A*
1
2
BC846B
1B*
Top view
MAM255
BC847
1H*
BC847A
1E*
BC847B
1F*
BC847C
1G*
Fig.1 Simplified outline (SOT23) and symbol.
BC848B
1K*
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC846
-
80
V
BC847
-
50
V
BC848
-
30
V
V
CEO
collector-emitter voltage
open base
BC846
-
65
V
BC847
-
45
V
BC848
-
30
V
V
EBO
emitter-base voltage
open collector
BC846; BC847
-
6
V
BC848
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board, standard footprint.
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
CHARACTERISTICS
T
amb
=25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current
V
CB
=30V; I
E
=0
-
-
15
nA
V
CB
=30V; I
E
=0;
T
j
= 150
-
-
5
m
A
°
C
I
EBO
emitter-base cut-off current
V
EB
=5V; I
C
=0
-
-
100
nA
h
FE
DC current gain
I
C
=10
m
A; V
CE
=5V
BC846A; BC847A
-
90
-
BC846B; BC847B; BC848B
-
150
-
BC847C
-
270
-
DC current gain
I
C
= 2 mA; V
CE
=5V
BC846
110
-
450
BC847
110
-
800
BC846A; BC847A
110
180
220
BC846B; BC847B; BC848B
200
290
450
BC847C
420
520
800
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
90
250
mV
I
C
= 100 mA; I
B
= 5 mA;
note 1
-
200
600
mV
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
700
-
mV
I
C
= 100 mA; I
B
= 5 mA;
note 1
-
900
-
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
580
660
700
mV
I
C
= 10 mA; V
CE
=5V
-
-
770
mV
C
c
collector capacitance
V
CB
=10V; I
E
=I
e
=0;
f = 1 MHz
-
2.5
-
pF
f
T
transition frequency
V
CE
=5V; I
C
=10mA;
f = 100 MHz
100
-
-
MHz
F
noise figure
I
C
= 200
m
A; V
CE
=5V;
R
S
=2k
-
2
10
dB
; f = 1 kHz;
B = 200 Hz
W
Note
1. Pulse test: t
p
£
300
m
s;
d£
0.02.
2002 Feb 04
4
°
Philips Semiconductors
Product specification
NPN general purpose transistors
BC846; BC847; BC848
MGT723
MGT724
400
1200
handbook, halfpage
handbook, halfpage
h
FE
1000
(1)
300
(1)
800
(2)
200
(2)
600
(3)
400
(3)
100
200
0
0
10
-
1
1
10
10
2
10
3
10
-
1
1
10
10
2
10
3
I
C
(mA)
I
C
(mA)
C.
(2) T
amb
=25
°
C.
(3) T
amb
=
°
C.
(2) T
amb
=25
°
C.
(3) T
amb
= 150
-
55
°
-
55
°
C.
°
C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
10
3
MGT725
1200
MGT726
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
1000
(1)
800
(2)
10
2
600
(1)
(2)
(3)
(3)
400
200
10
0
10
-
1
1
10
10
2
10
3
10
-
1
1
10
10
2
10
3
I
C
(mA)
I
C
(mA)
BC846A;
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
=25
°
C.
BC846A;
I
C
/I
B
= 10.
(1) T
amb
=
-
55
°
C.
(2) T
amb
=25
°
C.
(3) T
amb
=
-
55
°
C.
(3) T
amb
= 150
°
C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Feb 04
5
V
BE
(mV)
BC846A;
V
CE
=5V.
(1) T
amb
= 150
BC846A;
V
CE
=5V.
(1) T
amb
=
handbook, halfpage
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