4066.PDF

HCC/HCF4066B

OR MULTIPLEXING OF ANALOG OR DIGITAL SIGNALS

QUAD BILATERAL SWITCH FOR TRANSMISSION

. 15V DIGITAL OR

. 80 W TYPICAL ON RESISTANCE FOR 15V

7.5V PEAK-TO-PEAK

SWITCHING

. SWITCH ON RESISTANCE MATCHED TO

WITHIN 5

OPERATION

. ON RESISTANCE FLAT OVER FULL PEAK-

TO-PEAK SIGNAL RANGE

OVER 15V SIGNAL-INPUT

RANGE

(Plastic Package)

(Ceramic Frit Seal Package)

. HIGH ON/OFF OUTPUT-VOLTAGE RATIO :

. HIGH DEGREE OF LINEARITY : < 0.5% DIS-

TORTION TYP. @ f is = 1kHz, V is = 5 Vp-p,

V DD –V SS .

65dB TYP. @ f is = 10kHz, R L = 10k

. EXTREMELY LOW OFF SWITCH LEAKAGE

10V, R L = 10k

(Micro Package)

(Plastic Chip Carrier)

RESULTING IN VERY LOW OFFSET CUR-

RENT AND HIGH EFFECTIVE OFF RESIST-

ANCE ; 10pA TYP. @ V DD –V SS = 10V,

T A =25

ORDER CODES :

HCC4066BF

HCF4066BM1

HCF4066BEY

HCF4066BC1

. EXTREMELY HIGH CONTROL INPUT IMPED-

ANCE (control circuit isolated from signal cir-

cuit) : 10 12

. LOW CROSSTALK BETWEEN SWITCHES : –

TYP.

PIN CONNECTIONS

. MATCHED CONTROL-INPUT TO SIGNAL-

OUTPUT CAPACITANCE : REDUCES OUT-

PUT SIGNAL TRANSIENTS

50dB TYP. @ f is = 0.9MHz, R L =1k

. FREQUENCY RESPONSE, SWITCH ON =

40MHz (typ.)

. QUIESCENT CURRENT SPECIFIED TO 20V

. 5V, 10V, AND 15V PARAMETRIC RATINGS

. INPUT CURRENT OF 100nA AT 18V AND 25 ° C

FOR HCC DEVICE

. 100% TESTED FOR QUIESCENT CURRENT

. MEETS ALL REQUIREMENTS OF JEDEC TEN-

TATIVE STANDARD N o . 13A, ”STANDARD

SPECIFICATIONS FOR DESCRIPTION OF ”B”

SERIES CMOS DEVICES”

DESCRIPTION

The HCC4066B (extended temperature range) and

HCF4066B (intermediate temperature range) are

monolithic integrated circuits, available in 14-lead

dual in-line plastic or ceramic package and plas-

tic micropackage. The HCC/HCF4066B is a quad

bilateral switch intended for the transmission or

multiplexing of analog or digital signals. It is pin-for-

June 1989

1/11

FOR HCC DEVICE

HCC/HCF4066B

pin compatible with HCC/HCF4016B , but exhibits a

much lower ON resistance. In addition, the ON re-

sistance is relatively constant over the full input-sig-

nal range. The HCC/HCF4066B consists of four

independent bilateral switches. A single control sig-

nal is required per switch. Both the p and the n de-

vice in a given switch are biased ON or OFF

simultaneously by the control signal. As shown in

schematic diagram, the well of the n-channel device

on each switch is either tied to the input when the

switch is ON or to V SS when the switch is OFF. This

configuration eliminates the variation of the switch-

transistor threshold voltage with input signal, and

thus keeps the ON resistance low over the full oper-

ating-signal range. The advantages over single-

channel switches include peak input signal voltage

swings equal to the full supply voltage, and more

constant ON impedance over the input-signal

range. For sample-and-hold applications, however,

the HCC/HCF4016B is recommended.

SCHEMATIC DIAGRAM

1 OF 4 IDENTICAL SWITCHES AND ITS ASSOCIATED CONTROL CIRCUITRY.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V DD *

Supply Voltage : HCC Types

HCF Types

– 0.5 to + 20

– 0.5 to + 18

V i

Input Voltage

– 0.5 to V DD + 0.5

I I

DC Input Current (any one input)

P tot

Total Power Dissipation (per package)

Dissipation per Output Transistor

for T op = Full Package-temperature Range

200

100

T op

Operating Temperature : HCC Types

HCF Types

– 55 to + 125

–40to+85

Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections

of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.

* All voltage values are referred to V SS pin voltage.

Storage Temperature

– 65 to + 150

2/11

T stg

HCC/HCF4066B

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Value

Unit

V DD

Supply Voltage : HCC Types

HCF Types

3to18

3to15

V I

Input Voltage

0 to V DD

T op

Operating Temperature : HCC Types

HCF Types

– 55 to + 125

–40to+85

ELECTRICAL CHARACTERISTICS

(T amb =25

C, typical temperature coefficient for all V DD values is 0,3%/

Test Conditions

Val ue

Symbol

Parameter

V I V DD

T Lo w *

T High *

Unit

(V) (V) Min. Max. Min. Typ. Max. Min. Max.

I L

Quiescent

Device

Current (all

switches

ON or all

switches

OFF)

0/ 5

0.25

0.01 0.25

7.5

HCC

Types

0/10 10

0.5

0.01 0.5

0/15 15

0.01

0/20 20

0.02

150

0/ 5

0.01

7.5

HCF

Types

0/10 10

0.01

0/15 15

0.01

SIGNAL INPUTS (V is ) and Outputs (V os )

R ON

Resistance

HCC

Types

V C =V DD

R L = 10K

800

470 1050

1300

Return

V DD –V SS

310

180 400

550

to ________

V is =V SS to V DD

200

125 240

320

850

470 1050

1200

HCF

Types

330

180 400

500

210

125 240

300

Resistance

between any 2

Switches,

R L 10k

,V C =V DD 5

R ON

TDH

Total Harmonic

Distorsion

V C =V DD = 5V,

V SS = – 5V,

V is (p-p) = 5V

(sine wave centered in 0V)

R L = 10k

0.4

f is = 1kHz sine wave

- 3 dB Cutoff

Frequency (switch

on)

V C =V DD =5V,

V SS =–5V,

V is (p-p) = 5V

(sine wave centured on

0V)

R L =1k

MHz

*T Lo w =–55

Cfor HCC device : – 40

Cfor HCF device.

The Noise Margin for both ”1” and ” 0” level is : 1V min. with V DD = 5V, 2V min. with V DD = 10V, 2.5V min. with V DD = 15V.

Cfor HCC device : + 85

3/11

*T High = + 125

HCC/HCF4066B

ELECTRICAL CHARACTERISTICS (continued)

Test Conditions

Value

Symbol

Parameter

V DD

T Low *

25 ° C

T High *

Unit

(V)

Min. Max. Min. Typ. Max. Min. Max.

-50dB

Feedthrough

Frequen cy(switch

off)

V C =V SS =–5V,

V is (p-p) = 5V

(sine wave centured on

0V)

R L =1k

MHz

- 50 dB Crosstalk

Frequency

V C (A) = V DD =+5V

V C (B) = V SS =–5V

V is (A) = 5Vp-p,

source

R L =1k

MHz

t pd

Propagati on Delay

(signal input to

signa l output)

R L = 200k W

V C =V DD ,V SS = GND,

C L = 50pF, V is =10V

(squa re wave centured on

5V)

t r ,t f = 20ns

C is

Input Capacita nce V DD =+5V

V C =V SS =–5V

C os

Output

Capacitance

C ios

Feedthrough

0.5

Input/Output

Leakage

Current

Switch OFF

HCC

Types

V C =0V

V is = 18V ; V os

=0V

V is =0V;V os

=18V

0.1

± 10 –3

± 0.1

m A

HCF

Types

V C =0V

V is = 15V ; V os

=0V

V is =0V;V os

=15V

0.3

± 10 –3

± 0.3

CONTROL (V C )

V ILC

Control Input Low

Voltage

J I is J <10 m A

V is =V SS ,V os =V DD

and

V is =V DD ,V os =V SS

V IHC

Control Input High

Voltage

3.5

I IH ,I IL

Input

Leakage

Current

HCC

Types

V is 3 V DD

V DD –V SS = 18V

0.1

± 10 –5

± 0.1

HCF

Types

V DD –V SS = 15V

V CC

0.3

± 10 –5

± 0.3

V DD –V SS

*T Lo w =–55

Cfor HCC device : – 40

Cfor HCF device.

The Noise Margin for both ”1” and ” 0” level is : 1V min. with V DD = 5V, 2V min. with V DD = 10V, 2.5V min. with V DD = 15V.

Cfor HCC device : + 85

4/11

*T High = + 125

HCC/HCF4066B

ELECTRICAL CHARACTERISTICS (continued)

Test Conditions

Val ue

Symbol

Parameter

V DD

T Lo w *

T High *

Unit

(V)

Min. Max. Min. Typ. Max. Min. Max.

Crosstalk (control

input to signal

output)

V C = 10V (sq. wave)

t r ,t f =20ns

R L =10k

Turn-on

Propagation Delay

V IN =V DD

t r ,t f =20ns

C L =50pF

R L =1k

Control Input

Repetition Rate

to gnd

C L =50pF

V C = 10V (square

wave centured on

5V)

t r ,t f =20ns

V os =1/2V os @1kHz

MHz

9.5

C I

Input Capacitance Any Input

7.5

Cfor HCF device.

The Noise Margin for both ”1” and ” 0” level is : 1V min. with V DD = 5V, 2V min. with V DD = 10V, 2.5V min. with V DD = 15V.

Cfor HCC device : + 85

TYPICAL APPLICATIONS

BIDIRECTIONAL SIGNAL TRANSMISSION VIA DIGITAL CONTROL LOGIC

5/11

V is =V DD ,V SS = GND

R L =1k

*T Lo w =–55 ° Cfor HCC device : – 40 ° Cfor HCF device.

*T High = + 125

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