2n2222.pdf

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NPN switching transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2222; 2N2222A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 29
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Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
FEATURES
PINNING
·
High current (max. 800 mA)
PIN
DESCRIPTION
·
Low voltage (max. 40 V).
1
emitter
2
base
APPLICATIONS
3
collector, connected to case
·
Linear amplification and switching.
DESCRIPTION
handbook, halfpage
1
3
2
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
2
3
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
2N2222
-
60
V
2N2222A
-
75
V
V CEO
collector-emitter voltage
open base
2N2222
-
30
V
2N2222A
-
40
V
I C
collector current (DC)
-
800
mA
P tot
total power dissipation
T amb £
25
°
C
-
500
mW
h FE
DC current gain
I C = 10 mA; V CE =10V
75
-
f T
transition frequency
I C = 20 mA; V CE = 20 V; f = 100 MHz
2N2222
250
-
MHz
2N2222A
300
-
MHz
t off
turn-off time
I Con = 150 mA; I Bon = 15 mA; I Boff =
-
15 mA
-
250
ns
1997 May 29
2
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Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
2N2222
-
60
V
2N2222A
-
75
V
V CEO
collector-emitter voltage
open base
2N2222
-
30
V
2N2222A
-
40
V
V EBO
emitter-base voltage
open collector
2N2222
-
5
V
2N2222A
-
6
V
I C
collector current (DC)
-
800
mA
I CM
peak collector current
-
800
mA
I BM
peak base current
-
200
mA
P tot
total power dissipation
T amb £
25
°
C
-
500
mW
T case £
25
C
-
1.2
W
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
200
°
C
T amb
operating ambient temperature
-
65
+150
°
C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient in free air
350
K/W
R th j-c
thermal resistance from junction to case
146
K/W
1997 May 29
3
°
22885386.021.png
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
CHARACTERISTICS
T j =25 ° C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
I CBO
collector cut-off current
2N2222
I E = 0; V CB =50V
-
10
nA
I E = 0; V CB = 50 V; T amb = 150
°
C
-
10
m
A
I CBO
collector cut-off current
2N2222A
I E = 0; V CB =60V
-
10
nA
I E = 0; V CB = 60 V; T amb = 150 ° C
-
10
m A
I EBO
emitter cut-off current
I C = 0; V EB =3V
-
10
nA
h FE
DC current gain
I C = 0.1 mA; V CE =10V
35
-
I C = 1 mA; V CE =10V
50
-
I C = 10 mA; V CE =10V
75
-
I C = 150 mA; V CE = 1 V; note 1
50
-
I C = 150 mA; V CE = 10 V; note 1
100
300
h FE
DC current gain
I C = 10 mA; V CE = 10 V; T amb =
-
55
°
C
2N2222A
35
-
h FE
DC current gain
I C = 500 mA; V CE = 10 V; note 1
2N2222
30
-
2N2222A
40
-
V CEsat
collector-emitter saturation voltage
2N2222
I C = 150 mA; I B = 15 mA; note 1
-
400
mV
I C = 500 mA; I B = 50 mA; note 1
-
1.6
V
V CEsat
collector-emitter saturation voltage
2N2222A
I C = 150 mA; I B = 15 mA; note 1
-
300
mV
I C = 500 mA; I B = 50 mA; note 1
-
1
V
V BEsat
base-emitter saturation voltage
2N2222
I C = 150 mA; I B = 15 mA; note 1
-
1.3
V
I C = 500 mA; I B = 50 mA; note 1
-
2.6
V
V BEsat
base-emitter saturation voltage
2N2222A
I C = 150 mA; I B = 15 mA; note 1
0.6
1.2
V
I C = 500 mA; I B = 50 mA; note 1
-
2
V
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
8
pF
C e
emitter capacitance
I C =i c = 0; V EB = 500 mV; f = 1 MHz
2N2222A
-
25
pF
f T
transition frequency
I C = 20 mA; V CE = 20 V; f = 100 MHz
2N2222
250
-
MHz
2N2222A
300
-
MHz
F
noise figure
I C = 200
m
A; V CE =5V; R S =2k
W
;
f = 1 kHz; B = 200 Hz
2N2222A
-
4
dB
1997 May 29
4
22885386.022.png 22885386.023.png
Philips Semiconductors
Product specification
NPN switching transistors
2N2222; 2N2222A
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Switching times (between 10% and 90% levels); see Fig.2
t on
turn-on time
I Con = 150 mA; I Bon = 15 mA; I Boff =
-
15 mA
-
35
ns
t d
delay time
-
10
ns
t r
rise time
-
25
ns
t off
turn-off time
-
250
ns
t s
storage time
-
200
ns
t f
fall time
-
60
ns
Note
1. Pulse test: t p £
300
m
s;
d£
0.02.
ndbook, full pagewidth
V BB
V CC
R B
R C
oscilloscope
(probe)
450 W
V o
(probe)
450 W
oscillo scope
V i
R2
DUT
R1
MLB826
V i = 9.5 V; T = 500 m s; t p =10 m s; t r =t f £ 3 ns.
R1 = 68
; R2 = 325
W
; R B = 325
W
; R C = 160
W
.
V BB = - 3.5 V; V CC = 29.5 V.
Oscilloscope input impedance Z i =50
W
.
Fig.2 Test circuit for switching times.
1997 May 29
5
W
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