BFT92.pdf

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BFT 92
PNP Silicon RF Transistor
• For broadband amplifiers up to 2GHz
at collector currents up to 20mA
• Complementary type: BFR 92P (NPN)
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Marking
Ordering Code
Pin Configuration
Package
BFT 92
W1s
Q62702-F1062
1 = B
2 = E
3 = C
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
V CEO
15
V
Collector-base voltage
V CBO
20
Emitter-base voltage
V EBO
2
Collector current
I C
25
mA
Base current
I B
3
Total power dissipation
T S
P tot
mW
£
78 °C
200
Junction temperature
T j
150
°C
Ambient temperature
T A
- 65 ... + 150
Storage temperature
T stg
- 65 ... + 150
Thermal Resistance
Junction - soldering point 1)
R thJS
£
360
K/W
1) T S is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-13-1996
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BFT 92
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I C = 1 mA, I B = 0
V (BR)CEO
V
15
-
-
Collector-base cutoff current
V CB = 10 V, I E = 0
I CBO
nA
-
-
100
Emitter-base cutoff current
V EB = 2 V, I C = 0
I EBO
µA
-
-
10
DC current gain
I C = 15 mA, V CE = 8 V
h FE
-
15
50
-
Semiconductor Group
2
Dec-13-1996
876331032.007.png 876331032.008.png 876331032.009.png
 
BFT 92
Electrical Characteristics at T A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I C = 15 mA, V CE = 8 V, f = 500 MHz
f T
GHz
3.5
5
-
Collector-base capacitance
V CB = 10 V, f = 1 MHz
C cb
pF
-
0.54
0.8
Collector-emitter capacitance
V CE = 10 V, f = 1 MHz
C ce
-
0.25
-
Emitter-base capacitance
V EB = 0.5 V, f = 1 MHz
C eb
-
0.77
-
Noise figure
I C = 2 mA, V CE = 8 V, Z S = Z Sopt
f = 900 MHz
f = 1.8 GHz
F
dB
-
2
-
-
3.2
-
Power gain 2)
I C = 15 mA, V CE = 8 V, Z S = Z Sopt
Z L = Z Lopt
f = 900 MHz
f = 1.8 GHz
G ma
-
13.5
-
-
8
-
|S 21e | 2
Transducer gain
I C = 15 mA, V CE = 8 V, Z S =Z L = 50
W
f = 900 MHz
f = 1.8 GHz
-
11.5
-
-
6
-
2) G ma = |S 21 /S 12 | (k-(k 2 -1) 1/2 )
Semiconductor Group
3
Dec-13-1996
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BFT 92
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
4.5354
fA
BF =
98.533
-
NF =
0.90551
-
VAF =
10.983
V
IKF =
0.016123
A
ISE =
12.196
fA
NE =
1.1172
-
BR =
10.297
-
NR =
1.2703
-
VAR =
47.577
V
IKR =
0.019729
A
ISC =
0.024709
fA
NC =
1.206
-
RB =
7.9562
W
IRB =
0.79584
mA
RBM =
1.5939
W
RE =
1.5119
W
RC =
0.66749
W
CJE =
1.7785
fF
VJE =
0.79082
V
MJE =
0.32167
-
TF =
32.171
ps
XTF =
0.30227
-
VTF =
0.21451
V
ITF =
0.013277
mA
PTF =
0
deg
CJC =
922.07
fF
VJC =
1.2
V
MJC =
0.3
-
XCJC =
0.3
-
TR =
2.0779
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.75167
-
TNOM
300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
LBI =
0.85
nH
LBO =
0.51
nH
LEI =
0.69
nH
LEO =
0.61
nH
LCI =
0
nH
LCO =
0.49
nH
CBE =
fF
CCB =
84
fF
CCE =
165
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-13-1996
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BFT 92
Total power dissipation P tot = f (T A *, T S )
* Package mounted on epoxy
300
mW
P tot
200
T S
150
100
T A
50
0
0
20
40
60
80
100
120
°C 150
T A ,T S
Permissible Pulse Load R thJS = f (t p )
Permissible Pulse Load P totmax /P totDC = f (t p )
10
3
10
2
R thJS
P totmax /P totDC
K/W
-
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2
1
10
10
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0
10
1
10
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
s
s
t p
t p
Semiconductor Group
5
Dec-13-1996
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