2N4036.pdf

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MEDIUM SPEED SWITCH
2N4036
MEDIUM-SPEED SWITCH
DESCRIPTION
The 2N4036 is a silicon planar epitaxial PNP tran-
sistor in Jedec TO-39 metal case. It is intended par-
ticularly as medium speed saturated switch and
general purpose amplifier.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-base Voltage (I E =0)
–90
V
V CEX
Collector-emitter Voltage (V BE = 1.5 V)
– 85
V
V CER
Collector-emitter Voltage (R BE
3
200
W
)
– 85
V
V CEO
Collector-emitter Voltage (I B =0)
–65
V
V EBO
Emitter-base Voltage (I C =0)
– 6
V
I C
Collector Current
– 1
A
I B
Base Current
– 0.5
A
P tot
Total Power Dissipation at T amb
3
25
°
C
1
7
W
W
at T case
3
25
°
C
T stg ,T j Storage and Junction Temperature
– 65 to 200
C
October 1988
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°
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2N4036
THERMAL DATA
R th j-case
R th j-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
25
175
C/W
°
C/W
ELECTRICAL CHARACTERISTICS (T amb =25
°
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I CBO
Collector Cutoff Current
(I E =0)
V CB = – 60 V
– 20
nA
I CEO
Collector Cutoff Current
(I B =0)
V CE = – 30 V
– 0.5
m
A
I EBO
Emitter Cutoff Current
(I C =0)
V EB =–5 V
–20 nA
V( BR)CBO Collector-base Breakdown
Voltage (I E =0)
I C =–100
m
– 90
V
V ( BR) CEX * Collector-emitter Breakdown
Voltage (V BE = 1.5 V)
I C =–10mA
– 85
V
V (BR)CER * Collector-emitter Breakdown
Voltage (R BE =200
I C =–10mA
– 85
V
W
)
V (BR)CEO * Collector-emitter Breakdown
Voltage (I B =0)
I C =–10mA
– 65
V
V (BR)EBO Emitter-base Breakdown Voltage
(I C =0)
I E =–100
m
– 7
V
V CE( sat ) * Collector-emitter Saturation
Voltage
I C =–150 mA I B = – 15 mA
– 0.65
V
V BE *
Base-emitter Voltage
I C =–150 mA V CE = – 10 V
– 1.1
V
h FE *
DC Current Gain
I C = – 0.1 mA
I C =–150 mA
I C =–500 mA
V CE =–10 V
V CE =–10 V
V CE =–10 V
20
40
20
140
f T
Transition Frequency
I C =–50mA
f = 20 MHz
V CE =–10 V
MHz
60
C EBO
Emitter-base Capacitance
I C =0
f=1MHz
V EB = – 0.5 V
pF
90
C CBO
Collector-base Capacitance
I E =0
f=1MHz
V CB =–10 V
pF
30
t on **
Turn-on Time
I C =–150 mA
I B1 =–15 mA
V CC = – 30V
ns
110
t off **
Turn-off Time
I C =–150 mA
I B1 =–I B2 =–
V CC =–30 V
15 mA
ns
700
* Pulsed : pulse duration = 300
m
s, duty cycle = 1 %.
** See test circuit.
2/5
°
A
A
23101997.003.png
2N4036
Test Circuit for t on ,t off .
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2N4036
TO39 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
12.7
0.500
B
0.49
0.019
D
6.6
0.260
E
8.5
0.334
F
9.4
0.370
G
5.08
0.200
H
1.2
0.047
I
0.9
0.035
L
45 o (typ.)
D
A
G
I
H
L
P008B
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2N4036
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
{
1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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