2n6845.pdf

PD - 90552C

IRFF9120

REPETITIVE AVALANCHE AND dv/dt RATED

JANTX2N6845

HEXFET

TRANSISTORS

JANTXV2N6845

THRU-HOLE (TO-205AF)

REF:MIL-PRF-19500/563

100V, P-CHANNEL

Product Summary

Part Number BVDSS R DS(on) I D

IRFF9120 -100V 0.60Ω

-4.0A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance.

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as volt-

age control, very fast switching, ease of parelleling

and temperature stability of the electrical parameters.

They are well suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high energy pulse circuits.

TO-39

Repetitive Avalanche Ratings

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Absolute Maximum Ratings

Parameter

Units

I D @ V GS = -10V, T C = 25°C Continuous Drain Current

-4.0

I D @ V GS = -10V, T C = 100°C Continuous Drain Current

-2.6

I DM

Pulsed Drain Current ➀

-16

P D @ T C = 25°C

Max. Power Dissipation

2 0

Linear Derating Factor

0.16

W/°C

V GS

Gate-to-Source Voltage

±20

E AS

Single Pulse Avalanche Energy ➁

115

I AR

Avalanche Current ➀

—

E AR

Repetitive Avalanche Energy ➀

—

dv/dt

Peak Diode Recovery dv/dt ➂

-5.0

V/ns

T J

Operating Junction

-55 to 150

T STG

Storage Temperature Range

Lead Temperature

o C

300 (0.063 in. (1.6mm) from case for 10s)

Weight

0.98(typical)

For footnotes refer to the last page

www.irf.com

01/22/01

Features:

IRFF9120

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

BV DSS

Drain-to-Source Breakdown Voltage

-100

—

V GS = 0V, I D = -1.0mA

BV DSS /∆

T J Temperature Coefficient of Breakdown

—

-0.10 —

V/°C

Reference to 25°C, I D = -1.0mA

Voltage

R DS(on)

Static Drain-to-Source On-State

—

— 0.60 V GS = -10V, I D = -2.6A ➃

Resistance

—

— 0.69

V GS =-10V, I D =-4.0A ➃

V GS(th)

Gate Threshold Voltage

-2.0

—

-4.0 V V DS = V GS , I D = -250µ A

g fs

Forward Transconductance

1.25

—

S (

)

DS > -15V, I DS = -2.6A ➃

I DSS

Zero Gate Voltage Drain Current

—

-25

V DS = -80V, V GS =0V

—

-250

µA

V DS = -80V

V GS = 0V, T J = 125°C

I GSS

Gate-to-Source Leakage Forward

—

-100

V GS = -20V

I GSS

Gate-to-Source Leakage Reverse

—

100

V GS = 20V

Q g

Total Gate Charge

4.3

—

16.3

V GS =-10V, ID = -4.0A

Q gs

Gate-to-Source Charge

1.3

—

4.7

V DS = -50V

Q gd

Gate-to-Drain (‘Miller’) Charge

1.0

—

9.0

t d(on)

Turn-On Delay Time

—

6 0

V DD = -50V, I D = -4.0A,

t r

Rise Time

—

100

R G =7.5Ω

t d (off)

Turn-Off Delay Time

—

5 0

t f

Fall Time

—

7 0

L S + L D

Total Inductance

—

7.0

—

Measured from drain lead (6mm/0.25in. from

package) to source lead (6mm/0.25in. from

package)

C iss

Input Capacitance

—

380

V GS = 0V, V DS = -25V

C oss

Output Capacitance

—

170

—

f = 1.0MHz

C rss

Reverse Transfer Capacitance

—

4 5

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

I S

Continuous Source Current (Body Diode)

—

-4.0

I SM

Pulse Source Current (Body Diode) ➀

—

-16

V SD

Diode Forward Voltage

—

-4.8

T j = 25°C, I S =-4.0A, V GS = 0V ➃

t rr

Reverse Recovery Time

—

200

Tj = 25°C, I F = -4.0A, di/dt ≤

-100A/µ

Q RR Reverse Recovery Charge

—

3.1

µC

V DD ≤

-50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

R thJC

Junction-to-Case

— — 6.25

°C/W

R thJA

Junction-to-Ambient

— —

175 Typical socket mount

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

www.irf.com

IRFF9120

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFF9120

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

www.irf.com

13 a& b

IRFF9120

V DS

R D

V GS

D.U.T.

R G

V DD

-10V

Pulse Width

µs

Duty Factor

Fig 10a. Switching Time Test Circuit

t d (on ) tr

t d (of f) tf

V GS

10%

90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

V DS

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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