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DISCRETE SEMICONDUCTORS

DATA SHEET

BLV21

VHF power transistor

Product speciﬁcation

File under Discrete Semiconductors, SC08a

August 1986

214418293.055.png

Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLV21

DESCRIPTION

It has a 3/8" flange envelope with a

ceramic cap. All leads are isolated

from the flange.

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B and C operated h.f. and v.h.f.

transmitters with a nominal supply

voltage of 28 V. The transistor is

resistance stabilized and is

guaranteed to withstand severe load

mismatch conditions.

QUICK REFERENCE DATA

R.F. performance up to T h = 25

°

C in an unneautralized common-emitter class-B circuit

MODE OF OPERATION V CE

V

f

MHz

P L

W

G p

dB

%

z I

W

Y L

mS

c.w.

28

175

15

>

10

>

65

1,4 + j1,85

33

-

j27,5

PIN CONFIGURATION

PINNING

PIN

DESCRIPTION

handbook, halfpage

1

collector

1

4

2

emitter

3

base

4

emitter

2

3

MSB057

Fig.1 Simplified outline, SOT123.

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

August 1986

2

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Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLV21

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (V BE = 0)

peak value

V CESM

max.

65 V

Collector-emitter voltage (open base)

V CEO

max.

36 V

Emitter-base voltage (open collector)

V EBO

max.

4 V

Collector current (average)

I C(AV)

max. 1,75 A

Collector current (peak value); f

>

1 MHz

I CM

max.

5,0 A

R.F. power dissipation (f > 1 MHz); T mb =25 ° C

P rf

max.

36 W

Storage temperature

T stg

-

65 to

+

150

°

C

Operating junction temperature

T j

max.

200

°

C

MGP283

MGP284

2

60

handbook, halfpage

handbook, halfpage

I C

(A)

P tot

(W)

III

1.5

T mb = 25 ° C

40

II

1

T h = 70 ° C

0.16 W/K

20

I

0.5

0

0

10

20

30

40

0

50

100

V CE (V)

T h ( ° C)

I Continuous d.c. operation

II Continuous r.f. operation

III Short-time operation during mismatch

Fig.2 D.C. SOAR.

Fig.3 R.F. power dissipation; V CE £ 28 V; f > 1 MHz.

THERMAL RESISTANCE

(dissipation = 15 W; T mb = 74,5

°

C, i.e. T h =70

°

C)

From junction to mounting base (d.c. dissipation)

R th j-mb(dc)

=

6,55 K/W

From junction to mounting base (r.f. dissipation)

R th j-mb(rf)

=

4,95 K/W

From mounting base to heatsink

R th mb-h

=

0,3 K/W

August 1986

3

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Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLV21

CHARACTERISTICS

C

Collector-emitter breakdown voltage

V BE = 0; I C = 5 mA

°

V (BR) CES

>

65 V

Collector-emitter breakdown voltage

open base; I C = 25 mA

V (BR) CEO

>

36 V

Emitter-base breakdown voltage

open collector; I E = 2 mA

V (BR)EBO

>

4V

Collector cut-off current

V BE = 0; V CE = 36 V

I CES

<

2mA

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

E SBO

>

2,5 mJ

R BE =10 W

E SBR

>

2,5 mJ

D.C. current gain (1)

typ.

50

I C = 0,7 A; V CE =5 V

h FE

10 to 100

Collector-emitter saturation voltage (1)

I C = 2 A; I B = 0,4 A

V CEsat

typ.

0,65 V

Transition frequency at f = 100 MHz (1)

-

I E = 0,7 A; V CB = 28 V

f T

typ.

650 MHz

-

I E = 2 A; V CB = 28 V

f T

typ.

625 MHz

Collector capacitance at f = 1 MHz

I E =I e =0;V CB = 28 V

C c

typ.

18 pF

Feedback capacitance at f = 1 MHz

I C = 100 mA; V CE = 28 V

C re

typ.

12,8 pF

Collector-ﬂange capacitance

C cf

typ.

2 pF

Note

1. Measured under pulse conditions: t p £ 200 m s; d£ 0,02.

August 1986

4

T j =25

214418293.050.png

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Philips Semiconductors

Product speciﬁcation

VHF power transistor

BLV21

MGP285

60

MGP286

100

handbook, halfpage

handbook, halfpage

h FE

C c

(pF)

75

V CE = 28 V

40

50

5 V

typ

20

25

0

0

0

2

4

0

10

20

30

40

I C (A)

V CB (V)

Fig.4 Typical values; T j =25 ° C.

Fig.5 I E =I e = 0; f = 1 MHz; T j = 25 ° C.

750

MGP287

handbook, full pagewidth

f T

(MHz)

V CB

= 28 V

500

20 V

250

0

0

1

2

3

4

5

-

I E (A)

Fig.6 Typical values; f = 100 MHz; T j = 25

°

C.

August 1986

5

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