bfr182.pdf

BFR182

NPN Silicon RF Transistor

For low noise, high-gain broadband amplifiers at

collector currents from 1 mA to 20 mA

f T = 8 GHz

F = 1.2 dB at 900 MHz

VPS05161

ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFR182

RGs

1 = B

2 = E

3 = C

SOT23

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

V CEO

Collector-emitter voltage

V CES

Collector-base voltage

V CBO

Emitter-base voltage

V EBO

Collector current

I C

Base current

I B

Total power dissipation

T S

P tot

250

93 °C 1)

Junction temperature

T j

150

°C

Ambient temperature

T A

-65 ... 150

Storage temperature

T stg

-65 ... 150

Thermal Resistance

Junction - soldering point 2)

R thJS

230

K/W

1 T S is measured on the collector lead at the soldering point to the pcb

2 For calculation of R thJA please refer to Application Note Thermal Resistance

Aug-09-2001

BFR182

Electrical Characteristics at T A = 25°C, unless o therwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

DC characteristics

Collector-emitter breakdown voltage

I C = 1 mA, I B = 0

V (BR)CEO

Collector-emitter cutoff current

V CE = 20 V, V BE = 0

I CES

100 µA

Collector-base cutoff current

V CB = 10 V, I E = 0

I CBO

100 nA

Emitter-base cutoff current

V EB = 1 V, I C = 0

I EBO

µA

DC current gain

I C = 10 mA, V CE = 8 V

h FE

100

200 -

Aug-09-2001

BFR182

Electrical Characteristics at T A = 25°C, unless o therwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics (verified by random sampling)

Transition frequency

I C = 15 mA, V CE = 8 V, f = 500 MHz

f T

GHz

Collector-base capacitance

V CB = 10 V, f = 1 MHz

C cb

0.33

0.5 pF

Collector-emitter capacitance

V CE = 10 V, f = 1 MHz

C ce

0.2

Emitter-base capacitance

V EB = 0.5 V, f = 1 MHz

C eb

0.6

Noise figure

I C = 3 mA, V CE = 8 V, Z S = Z Sopt ,

f = 900 MHz

f = 1.8 GHz

1.2

1.9

Power gain, maximum available 1)

I C = 10 mA, V CE = 8 V, Z S = Z Sopt , Z L = Z Lopt ,

f = 900 MHz

f = 1.8 GHz

G ma

17.5

11.5

Transducer gain

I C = 10 mA, V CE = 8 V, Z S = Z L = 50

| S 21e | 2

14.5

f = 900 MHz

f = 1.8 GHz

1 G ma = | S 21 / S 12 | (k-(k 2 -1) 1/2 )

Aug-09-2001

BFR182

SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :

Transistor Chip Data

IS =

4.8499

BF =

84.113

NF =

0.56639

VAF =

21.742

IKF =

0.14414

ISE =

8.4254

NE =

0.91624 -

BR =

10.004

NR =

0.54818

VAR =

2.2595

IKR =

0.03978

ISC =

5.9438

NC =

0.5641

RB =

3.4217

IRB =

0.071955 mA

RBM =

2.8263

RE =

2.1858

RC =

1.8159

CJE =

8.8619

VJE =

1.0378

MJE =

0.40796

TF =

22.72

XTF =

0.43147 -

VTF =

0.34608

ITF =

6.5523

PTF =

deg

CJC =

490.25

VJC =

1.0132

MJC =

0.31068 -

XCJC = 0.19281

TR =

1.7541

CJS =

VJS =

0.75

MJS =

XTB =

EG =

1.11

XTI =

FC =

0.64175 -

TNOM

300

All parameters are ready to use, no scalling is necessary.

Extracted on behalf of Infineon Technologies AG by:

Institut für Mobil-und Satellitentechnik (IMST)

Package Equivalent Circuit:

L BI =

0.85

L BO =

0.51

L EI =

0.69

L EO =

0.61

L CI =

L CO =

0.49

C BE =

C CB =

C CE =

165

Valid up to 6GHz

For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales

office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes

Aug-09-2001

BFR182

Total power dissipation P tot = f ( T S )

300

200

150

100

100 120 °C 150

T S

Permissible Pulse Load R thJS = f ( t p )

Permissible Pulse Load

P totmax / P totDC = f ( t p )

K/W

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

0.2

0.1

0.05

0.02

0.01

0.005

D = 0

10 -7

10 -6

10 -5

10 -4

10 -3

10 -2

t p

10 0

10 -7

10 -6

10 -5

10 -4

10 -3

10 -2

t p

10 0

Aug-09-2001

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