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BC618 NPN Darlington transistor
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC618
NPN Darlington transistor
Product specification
Supersedes data of 2003 Oct 16
2004 Nov 05
Philips Semiconductors
Product specification
NPN Darlington transistor
BC618
FEATURES
PINNING
·
Low current (max. 500 mA)
PIN
DESCRIPTION
·
Low voltage (max. 55 V)
1
emitter
·
High DC current gain.
2
base
3
collector
APPLICATIONS
·
General purpose low frequency
·
Relay drivers.
handbook, halfpage
2
3
DESCRIPTION
1
2
3
TR1
TR2
NPN Darlington transistor in a TO-92; SOT54 plastic
package.
1
MAM302
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
BC618
SC-43A
plastic single-ended leaded (through hole) package; 3 leads
SOT54
2004 Nov 05
2
Philips Semiconductors
Product specification
NPN Darlington transistor
BC618
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
80
V
V
CES
collector-emitter voltage
V
BE
=0 V
-
55
V
V
EBO
emitter-base voltage
open collector
-
12
V
I
C
collector current (DC)
-
500
mA
I
CM
peak collector current
-
800
mA
I
B
base current (DC)
-
200
mA
P
tot
total power dissipation
T
amb
£
25
°
C; note 1
-
625
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
note 1
200
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Nov 05
3
°
°
Philips Semiconductors
Product specification
NPN Darlington transistor
BC618
CHARACTERISTICS
T
amb
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I
CBO
collector-base cut-off current
V
CB
= 60 V; I
E
=0 A
-
-
50
nA
I
CES
collector-emitter cut-off current
V
BE
= 0 V; V
CE
=60V
-
-
50
m
A
I
EBO
emitter-base cut-off current
V
EB
= 10 V; I
C
=0 A
-
-
50
nA
h
FE
DC current gain
V
CE
= 5 V; see Fig.2
I
C
= 1 mA
2000
-
-
I
C
= 10 mA
4000
-
-
I
C
= 200 mA
10000
-
70000
V
CEsat
collector-emitter saturation voltage I
C
= 200 mA; I
B
= 0.2 mA
-
-
1.1
V
V
BEsat
base-emitter saturation voltage
I
C
= 200 mA; I
B
= 0.2 mA
-
-
1.6
V
C
c
collector capacitance
V
CB
= 30 V; I
E
=0 A
-
3.5
-
pF
f
T
transition frequency
V
CE
=5V; I
C
= 500 mA; f = 100 MHz 155
-
-
MHz
MGD837
80000
handbook, full pagewidth
h
FE
60000
40000
20000
0
10
-
1
1
10
10
2
10
3
I
C
(mA)
V
CE
=2V.
Fig.2 DC current gain; typical values.
2004 Nov 05
4
Philips Semiconductors
Product specification
NPN Darlington transistor
BC618
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e
1
D
e
3
b
1
L
1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
1
0.66
0.55
c
D
d
E
e
e
1
L
L
1
(1)
max.
mm
5.2
5.0
0.48
0.40
0.45
0.38
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT54
TO-92
SC-43A
97-02-28
04-06-28
2004 Nov 05
5
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