SFS9530.PDF

FEATURES

BV DSS = -100 V

n Avalanche Rugged Technology

n Rugged Gate Oxide Technology

n Lower Input Capacitance

n Improved Gate Charge

n 175

R DS(on) = 0.3 W

I D = -8 A

C Operating Temperature

n Extended Safe Operating Area

n Lower Leakage Current : 10 mA (Max.) @ V DS = -100V

n Low R DS(ON) : 0.225 W (Typ.)

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

Units

V DSS

Drain-to-Source Voltage

Continuous Drain Current (T C =25

-100

-8.0

-5.6

-32

Continuous Drain Current (T C =100

I D

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T C =25

I DM

V GS

E AS

I AR

E AR

dv/dt

O 1

V/ns

213

-8.0

3.9

-6.5

0.26

O 1

O 3

P D

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8Ä from case for 5-seconds

T J , T STG

- 55 to +175

T L

300

Thermal Resistance

Symbol

Characteristic

Typ.

Max. Units

R q JC

R qJA

Junction-to-Case

Junction-to-Ambient

3.85

62.5

C/W

Electrical Characteristics (T C =25 o C unless otherwise specified)

Symbol

Characteristic

Min.

Typ.

Max. Units

Test Condition

BV DSS

DBV/DT J

V GS(th)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

-100

-2.0

-0.1

-4.0

-100

100

-10

-100

V GS =0V,I D =-250 m A

I D =-250mA See Fig 7

V DS =-5V,I D =-250mA

V GS =-20V

V GS =20V

V DS =-100V

V DS =-80V,T C =150

I GSS

I DSS

Drain-to-Source Leakage Current

R DS(on)

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain(ÃMillerÄ) Charge

0.3

V GS =-10V,I D =-4.0A

g fs

C iss

C oss

C rss

t d(on)

t r

t d(off)

t f

Q g

Q gs

Q gd

4.9

800

1035

240

100

V DS =-40V,I D =-4.0A

V GS =0V,V DS =-25V,f =1MHz

See Fig 5

160

5.4

12.2

V DD =-50V,I D =-10.5A,

R G =12

See Fig 13

V DS =-80V,V GS =-10V,

I D =-10.5A

See Fig 6 & Fig 12

Source-Drain Diode Ratings and Characteristics

Symbol

Characteristic

Min.

Typ.

Max. Units

Test Condition

I S

I SM

V SD

t rr

Q rr

Continuous Source Current

Pulsed-Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

O 1

120

0.53

-8.0

-32

-4.0

Integral reverse pn-diode

in the MOSFET

T J =25

C,I S =-8.0A,V GS =0V

C,I F =-10.5A

di F /dt=100A/ms

Notes ;

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

L=mH, I AS =-8.0A, V DD =-25V, R G =27W * , Starting T J =25 o C

I SD -10.5A, di/dt 400A/ms, V DD BV DSS , Starting T J =25 o C

Pulse Test : Pulse Width = 250 m s, Duty Cycle 2%

Essentially Independent of Operating Temperature

T J =25

O 1

O 2

O 3

Fig 1. Output Characteristics

Fig 2. Transfer Characteristics

V GS

Top : - 15 V

- 10 V

- 8.0 V

- 7.0 V

- 6.0 V

- 5.5 V

- 5.0 V

Bott om : - 4.5 V

Fig 3. On-Resistance vs. Drain Current

Fig 4. Source-Drain Diode Forward Voltage

Fig 5. Capacitance vs. Drain-Source Voltage

Fig 6. Gate Charge vs. Gate-Source Voltage

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Fig 7. Breakdown Voltage vs. Temperature

Fig 8. On-Resistance vs. Temperature

Fig 9. Max. Safe Operating Area

Fig 10. Max. Drain Current vs. Case Temperature

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Fig 11. Thermal Response

. q /0* 123#4

(5#6"7 1

8. q /0

Fig 12. Gate Charge Test Circuit & Waveform

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Fig 13. Resistive Switching Test Circuit & Waveforms

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

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