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INA128
INA129
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
Precision, Low Power
INSTRUMENTATION AMPLIFIERS
FEATURES
DESCRIPTION
LOW OFFSET VOLTAGE: 50
µ
V max
The INA128 and INA129 are low power, general
purpose instrumentation amplifiers offering excellent
accuracy. The versatile 3-op amp design and small size
make them ideal for a wide range of applications.
Current-feedback input circuitry provides wide
bandwidth even at high gain (200kHz at G = 100).
A single external resistor sets any gain from 1 to 10,000.
The INA128 provides an industry-standard gain
equation; the INA129 gain equation is compatible with
the AD620.
The INA128/INA129 is laser trimmed for very low offset
voltage
LOW DRIFT: 0.5
µ
V/
C max
LOW INPUT BIAS CURRENT: 5nA max
HIGH CMR: 120dB min
INPUTS PROTECTED TO
40V
WIDE SUPPLY RANGE:
2.25V to
18V
LOW QUIESCENT CURRENT: 700
µ
A
8-PIN PLASTIC DIP, SO-8
APPLICATIONS
BRIDGE AMPLIFIER
(50
µ
V),
drift
(0.5
µ
V/
°
C)
and
high
THERMOCOUPLE AMPLIFIER
common-mode rejection (120dB at G
≥
100). It
RTD SENSOR AMPLIFIER
operates with power supplies as low as
±
2.25V, and
MEDICAL INSTRUMENTATION
quiescent current is only 700
A—ideal for battery-
operated systems. Internal input protection can
withstand up to
µ
DATA ACQUISITION
40V without damage.
The INA128/INA129 is available in 8-pin plastic DIP and
SO-8 surface-mount packages, specified for the –40
±
°
C
to +85
C temperature range. The INA128 is also
available in a dual configuration, the INA2128.
°
V+
7
INA128:
INA128, INA129
50k
Ω
R
G
G=1+
2
−
Over-Voltage
Protection
V
IN
A
1
INA129:
40k
Ω
40k
Ω
G=1+
49.4k
Ω
R
G
1
(1)
25k
Ω
6
R
G
A
3
V
O
8
(1)
25k
Ω
5
A
2
Ref
+
3
Over-Voltage
Protection
40k
Ω
40k
Ω
V
IN
4
NOTE: (1) INA129: 24.7k
Ω
V
−
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
Copyright
1995−2005, Texas Instruments Incorporated
www.ti.com
www.ti.com
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
ELECTROSTATIC DISCHARGE SENSITIVITY
ABSOLUTE MAXIMUM RATINGS
(1)
Supply Voltage
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Analog Input Voltage Range
±
18V
This integrated circuit can be damaged by
ESD. Texas Instruments recommends that all
integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and
installation procedures can cause damage.
. . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Short-Circuit (to ground)
±
40V
. . . . . . . . . . . . . . . . . .
Continuous
Operating Temperature
. . . . . . . . . . . . . . . . . . .
Storage Temperature Range
−40
°
C to +125
°
C
. . . . . . . . . . . . . . . . .
−55
°
C to +125
°
C
Junction Temperature
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (soldering, 10s)
+150
C
°
ESD damage can range from subtle performance
degradation to complete device failure. Precision
integrated circuits may be more susceptible to damage
because very small parametric changes could cause the
device not to meet its published specifications.
. . . . . . . . . . . . . . . . . . . . .
(1)
Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not implied.
+300
°
C
ORDERING INFORMATION
For the most current package and ordering information, see the Package Option Addendum located at the end of this data
sheet.
PIN CONFIGURATION
8-Pin DIP and SO-8
Top View
R
G
V
−
IN
V
+
IN
V
−
1
8
R
G
V+
2
7
3
6
V
O
Ref
4
5
2
www.ti.com
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
ELECTRICAL CHARACTERISTICS
At T
A
= +25
°
C, V
S
=
±
15V, R
L
= 10k
Ω
, unless otherwise noted.
INA128P, U
INA129P. U
INA128PA, UA
INA129PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
INPUT
Offset Voltage, RTI
Initial
T
A
= +25
°
C
±
10
±
100/G
±
50
±
500/G
±
25
±
100/G
±
125
±
1000/G
µ
V
vs Temperature
T
A
= T
MIN
to T
MAX
±
0.2
±
2/G
±
0.5
±
20/G
±
0.2
±
5/G
±
1
±
20/G
µ
V/
°
C
vs Power Supply
V
S
=
2.25V to
18V
0.2
20/G
1
100/G
2
200/G
V/V
±
±
±
±
±
±
∗
±
±
µ
Long-Term Stability
±
0.1
±
3/G
∗
µ
V/mo
10
10
|| 2
Impedance, Differential
∗
Ω
|| pF
Common-Mode
10
11
|| 9
∗
Ω
|| pF
Common-Mode Voltage Range
(1)
V
O
= 0V
(V+) − 2
(V+) − 1.4
∗
∗
V
(V−) + 2
(V−) + 1.7
∗
∗
V
Safe Input Voltage
±
40
∗
V
Common-Mode Rejection
V
CM
=
±
13V,
∆
R
S
= 1k
Ω
G = 1
80
86
73
∗
dB
G = 10
100
106
93
∗
dB
G = 100
120
125
110
∗
dB
G = 1000
120
130
110
∗
dB
BIAS CURRENT
±
2
±
5
∗
±
10
nA
vs Temperature
±
30
∗
pA/
°
C
Offset Current
±
1
±
5
∗
±
10
nA
vs Temperature
30
pA/
C
±
∗
°
NOISE VOLTAGE, RTI
G = 1000, R
S
= 0
Ω
f = 10Hz
10
∗
nV/
√
Hz
f = 100Hz
8
∗
nV/
√
Hz
f = 1kHz
8
∗
nV/
√
Hz
f
B
= 0.1Hz to 10Hz
0.2
∗
µ
V
PP
Noise Current
f = 10Hz
0.9
∗
pA/
√
Hz
f = 1kHz
0.3
∗
pA/
√
Hz
f
B
= 0.1Hz to 10Hz
30
∗
pA
PP
GAIN
Gain Equation, INA128
1 + (50k
Ω/
R
G
)
∗
V/V
Gain Equation,
INA129
1 + (49.4k
Ω/
R
G
)
∗
V/V
Range of Gain
1
10000
∗
∗
V/V
Gain Error
G = 1
±
0.01
±
0.024
∗
±
0.1
%
G = 10
±
0.02
±
0.4
∗
±
0.5
%
G = 100
±
0.05
±
0.5
∗
±
0.7
%
G = 1000
±
0.5
±
1
∗
±
2
%
Gain vs Temperature
(2)
G = 1
±
1
±
10
∗
∗
ppm/
°
C
50k
Ω
(or 49.4k
Ω
) Resistance
(2)(3)
±
25
±
100
∗
∗
ppm/
°
C
Nonlinearity
V
O
=
±
13.6V, G = 1
±
0.0001
±
0.001
∗
±
0.002
% of FSR
G = 10
±
0.0003
±
0.002
∗
±
0.004
% of FSR
G = 100
±
0.0005
±
0.002
∗
±
0.004
% of FSR
G = 1000
±
0.001
(4)
∗
∗
% of FSR
NOTE
:
Specification is same as INA128P, U or INA129P, U.
(1)
Input common-mode range varies with output voltage — see typical curves.
(2)
Specified by wafer test.
(3)
Temperature coefficient of the 50k
∗
) term in the gain equation.
(4)
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is
Ω
(or 49.4k
Ω
±
0.001%.
3
www.ti.com
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
ELECTRICAL CHARACTERISTICS (continued)
At T
A
= +25
°
C, V
S
=
±
15V, R
L
= 10k
Ω
, unless otherwise noted.
INA128P, U
INA129P. U
INA128PA, UA
INA129PA, UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
MIN
TYP
MAX
UNIT
OUTPUT
Voltage: Positive
R
L
= 10k
Ω
(V+) − 1.4
(V+) − 0.9
∗
∗
V
Voltage:
Negative
R
L
= 10k
Ω
(V−) + 1.4
(V−) + 0.8
∗
∗
V
Load Capacitance Stability
1000
∗
pF
Short-Circuit Current
+6/−15
mA
∗
FREQUENCY RESPONSE
Bandwidth, −3dB
G = 1
1.3
∗
MHz
G = 10
700
∗
kHz
G = 100
200
∗
kHz
G = 1000
20
∗
kHz
Slew Rate
V
O
=
±
10V, G = 10
4
∗
V/
µ
s
Settling Time, 0.01%
G = 1
7
∗
µ
s
G = 10
7
∗
µ
s
G = 100
9
∗
µ
s
G = 1000
80
∗
µ
s
Overload Recovery
50% Overdrive
4
∗
µ
s
POWER SUPPLY
Voltage Range
±
2.25
±
15
±
18
∗
∗
∗
V
Current, Total
V
IN
= 0V
±
700
±
750
∗
∗
µ
A
TEMPERATURE RANGE
Specification
−40
+85
∗
∗
°
C
Operating
−40
+125
∗
∗
°
C
8-Pin DIP
80
∗
°
C/W
JA
SO-8 SOIC
150
∗
°
C/W
NOTE
:
Specification is same as INA128P, U or INA129P, U.
(1)
Input common-mode range varies with output voltage — see typical curves.
(2)
Specified by wafer test.
(3)
Temperature coefficient of the 50k
∗
) term in the gain equation.
(4)
Nonlinearity measurements in G = 1000 are dominated by noise. Typical nonlinearity is
±
0.001%.
Ω
(or 49.4k
Ω
4
www.ti.com
SBOS051B − OCTOBER 1995 − REVISED FEBRUARY 2005
TYPICAL CHARACTERISTICS
At T
A
= +25
°
C, V
S
=
±
15V, unless otherwise noted.
GAIN vs FREQUENCY
COMMON−MODE REJECTION vs FREQUENCY
60
140
G = 1000V/V
G = 1000V/V
G = 100V/V
50
120
G = 10V/V
40
100
G = 100V/V
G=1V/V
30
80
20
G=10V/V
60
10
40
0
G=1V/V
−
20
10
−
20
0
1k
10k
100k
1M
10M
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
POSITIVE POWER SUPPLY REJECTION
vs FREQUENCY
NEGATIVE POWER SUPPLY REJECTION
vs FREQUENCY
140
140
G = 1000V/V
120
120
G = 1000V/V
G = 100V/V
100
100
G = 100V/V
80
80
60
60
G=10V/V
G=10V/V
40
40
G=1V/V
G=1V/V
20
20
0
0
10
100
1k
10k
100k
1M
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
INPUT COMMON−MODE RANGE
INPUT COMMON−MODE RANGE
vs OUTPUT VOLTAGE, V
S
=
15V
vs OUTPUT VOLTAGE, V
S
=
±
5V,
±
2.5V
±
15
5
4
3
2
1
0
G
≥
10
G
≥
10
G
≥
G
≥
10
10
10
G=1
G=1
G=1
G=1
5
G
≥
10
+15V
−
−
V
D/2
0
G=1
+
V
O
V
D/2
−1
−2
−3
−4
−5
Ref
+
+
−5
V
CM
−
15V
−10
V
S
=
±
5V
V
S
=
±
2.5V
−15
−15
−10
−5
0
5
10
15
012345
−5
−4
−3
−2
−1
Output Voltage (V)
Output Voltage (V)
5
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