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2SC2996
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2996
FM/AM RF, MIX, Local, IF
High Frequency Amplifier Applications
Unit: mm
• High stability oscillation voltage on FM local oscillator
• Recommend FM/AM RF, MIX, local and IF
Maximum Ratings
(Ta
=
25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
40
V
Collector-emitter voltage
V
CEO
30
V
Emitter-base voltage
V
EBO
4
V
Collector current
I
C
50
mA
Emitter current
I
E
−
50
mA
Collector power dissipation
P
C
150
wW
Junction temperature
T
j
125
°C
Storage temperature range
T
stg
−
55~125
°C
JEDEC
TO-236
JEITA
―
TOSHIBA
2-3F1A
Electrical Characteristics
(Ta
=
25°C)
Weight: 0.012 g (typ.)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
40 V, I
E
=
0
0.1
µ
A
Emitter cut-off current
I
EBO
V
EB
=
4 V, I
C
=
0
0.5
µ
A
DC current gain
h
FE
(Note)
V
CE
=
6 V, I
C
=
1 mA
40
240
Reverse transfer capacitance
C
re
V
CB
=
6 V, f
=
1 MHz
0.9
1.3
pF
Transition frequency
f
T
V
CE
=
6 V, I
C
=
−
1 mA
150
350
MHz
Collector-base time constant
C
c
･
rbb’
V
CE
=
6 V, I
E
=
−
1 mA, f
=
30 MHz
15
30
ps
Noise figure
NF
V
CE
=
6 V, I
E
=
−
1 mA, f
=
100 MHz
(Figure 1)
4.0
dB
Power gain
G
pe
15
dB
Oscillation output voltage
V
OSC
CE
=
6 V, f
=
100 MHz (Figure 2)
150
mV
Note: h
FE
classification R: 40~80, O: 70~140, Y: 120~240
1
2003-03-19
2SC2996
L
1
: 0.8 mm
φ
silver plated copper wire, 4 T, 10ID, 8 length
Figure 1 NF, G
pe
Test Circuit
L
1
: 0.8 mm
φ
silver plated copper wire, 4 T, 10ID, 8 length
Figure 2 V
OSC
Test Circuit
Marking
2
2003-03-19
2SC2996
3
2003-03-19
2SC2996
4
2003-03-19
2SC2996
5
2003-03-19
Plik z chomika:
waclaw.sz
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