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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BRY62
Silicon controlled switch
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 21
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
DESCRIPTION
PINNING
Silicon planar PNPN switch in a
SOT143B plastic package. It is an
integrated PNP/NPN transistor pair,
with all electrodes accessible.
PIN
DESCRIPTION
1
anode gate
2
anode
3
cathode
APPLICATIONS
4
cathode gate
·
Switching applications.
handbook, 2 column
4
3
handbook, halfpage
a
ag
kg
1
2
k
MBB068
Top view
MSB014
Marking code:
A51.
Fig.1 Simplified outline (SOT143B) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
PNP transistor
V
EBO
emitter-base voltage
open collector
-
70
V
NPN transistor
V
CBO
collector-base voltage
70
V
I
ERM
repetitive peak emitter current
-
2.5
A
P
tot
total power dissipation
T
amb
£
25
°
C
250
mW
T
j
junction temperature
150
°
C
V
AK
forward on-state voltage
I
A
= 50 mA; I
AG
= 0; R
KG-K
=10k
W
1.4
V
I
H
holding current
I
AG
= 10 mA; V
BB
=
-
2 V; R
KG-K
=10k
W
1
mA
t
on
turn-on time
0.25
m
s
t
off
turn-off time
15
m
s
1997 Jul 21
2
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
NPN transistor
V
CBO
collector-base voltage
open emitter
-
70
V
V
CER
collector-emitter voltage
R
BE
=10k
W
-
70
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
note 1
-
175
mA
I
CM
peak collector current
note 2
-
175
mA
I
E
emitter current (DC)
-
-
175
mA
I
ERM
repetitive peak emitter current
t
p
=10
m
s;
d
= 0.01
-
-
2.5
A
PNP transistor
V
CBO
collector-base voltage
open emitter
-
-
70
V
V
CEO
collector-emitter voltage
open base
-
-
70
V
V
EBO
emitter-base voltage
open collector
-
-
70
V
I
E
emitter current (DC)
-
175
mA
I
ERM
repetitive peak emitter current
t
p
=10
m
s;
d
= 0.01
-
2.5
A
Combined device
P
tot
total power dissipation
T
amb
£
25
°
C
-
250
mW
T
stg
storage temperature
-
65
+150
°
C
T
j
junction temperature
-
150
°
C
T
amb
operating ambient temperature
see Fig.14
-
65
+150
°
C
Notes
1. Provided the I
E
rating is not exceeded.
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 k
W
.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
500
K/W
1997 Jul 21
3
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
a (anode)
(e )
2
e
2
handbook, halfpage
ag (anode gate)
PNP transistor
(c ,b )
12
P
N
P
N
c ,b
12
b ,c
12
P
kg (cathode gate)
NPN transistor
N
(b ,c )
12
MBB681
e
1
k (cathode)
(e )
1
MBB680
Fig.2 Two transistor equivalent circuit.
Fig.3 PNPN silicon controlled switch structure.
handbook, halfpage
a
I
A
handbook, halfpage
I
A
I
AG
I
AG
a
ag
I
KG
V
AK
R
KG-K
ag
kg
DUT
-
I
K
kg
k
V
BB
k
MBB683
MBB682
Fig.4 Silicon controlled switch symbol.
Fig.5 Equivalent test circuit for holding current.
1997 Jul 21
4
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
CHARACTERISTICS
T
amb
=25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX.
UNIT
NPN transistor
I
CER
collector cut-off current
V
CE
=70V; R
BE
=10k
W
-
100
nA
V
CE
=70V; R
BE
=10k
W
; T
j
= 150
°
C
-
10
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=5V; T
j
= 150
C
-
10
m
A
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
=1mA
-
500
mV
V
BEsat
base-emitter saturation voltage
I
C
= 10 mA; I
B
=1mA
-
900
mV
h
FE
DC current gain
I
C
= 10 mA; V
CE
=2V
50
-
f
T
transition frequency
I
C
= 10 mA; V
CE
= 2 V; f = 100 MHz
100
-
MHz
C
c
collector capacitance
I
E
=i
e
= 0; V
CB
= 20 V; f = 1 MHz
-
5
pF
C
e
emitter capacitance
I
C
=i
c
= 0; V
EB
= 1 V; f = 1 MHz
-
25
pF
PNP transistor
I
CEO
collector cut-off current
I
B
= 0; V
CE
=
-
70 V; T
j
= 150
°
C
-
-
10
m
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
=
-
70 V; T
j
= 150
°
C
-
-
10
m
A
h
FE
DC current gain
I
E
= 1 mA; V
CB
=
-
5V
3
15
Combined device
V
AK
forward on-state voltage
R
KG-K
=10k
W
I
A
= 50 mA; I
AG
=0
-
1.4
V
I
A
= 50 mA; I
AG
= 0; T
j
=
-
55
°
C
-
1.9
V
I
A
= 1 mA; I
AG
=10mA
-
1.2
V
I
H
holding current
R
KG-K
=10k
W
;I
AG
= 10 mA;
V
BB
=
-
1
mA
-
2 V; see Fig.5
Switching times
t
on
turn-on time
V
KG-K
=
-
0.5 to 4.5 V; R
KG-K
=1k
W
;
see Figs 6 and 7
-
0.25
m
s
V
KG-K
=
-
0.5 to 0.5 V; R
KG-K
=10k
W-
1.5
m
s
t
off
turn-off time
R
KG-K
=10k
W
; see Figs 8 and 9
-
15
m
s
1997 Jul 21
5
°
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