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TIC226 SERIES
SILICON TRIACS
Copyright © 1997, Power Innovations Limited, UK
APRIL 1971 - REVISED MARCH 1997
l 8 A RMS, 70 A Peak
l Glass Passivated Wafer
TO-220 PACKAGE
(TOP VIEW)
l 400 V to 800 V Off-State Voltage
l Max I GT of 50 mA (Quadrants 1 - 3)
MT1
1
MT2
2
G
3
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage (see Note 1)
TIC226D
TIC226M
TIC226S
TIC226N
V DRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2)
I T(RMS)
8
A
Peak on-state surge current full-sine-wave (see Note 3)
I TSM
70
A
Peak on-state surge current half-sine-wave (see Note 4)
I TSM
80
A
Peak gate current
I GM
±1
A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width £ 200 m s)
P GM
2.2
W
Average gate power dissipation at (or below) 85°C case temperature (see Note 5)
P G(AV)
0.9
W
Operating case temperature range
T C
-40 to +110
°C
Storage temperature range
T stg
-40 to +125
°C
Lead temperature 1.6 mm from case for 10 seconds
T L
230
°C
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I DRM
Repetitive peak
off-state current
V D = rated V DRM
I G = 0
T C = 110°C
±2
mA
I GTM
Peak gate trigger
current
V supply = +12 V†
V supply = +12 V†
V supply = -12 V†
V supply = -12 V†
R L = 10 W
R L = 10 W
R L = 10 W
R L = 10 W
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
2
-12
-9
20
50
-50
-50
mA
V GTM
Peak gate trigger
voltage
V supply = +12 V†
V supply = +12 V†
V supply = -12 V†
V supply = -12 V†
R L = 10 W
R L = 10 W
R L = 10 W
R L = 10 W
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
t p(g) > 20 m s
0.7
-0.8
-0.8
0.9
2
-2
-2
2
V
† All voltages are with respect to Main Terminal 1.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
1
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TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V TM
Peak on-state voltage I TM = ±12 A
I G = 50 mA
(see Note 6)
±1.6
±2.1
V
I H
Holding current
V supply = +12 V†
V supply = -12 V†
I G = 0
I G = 0
Init’ I TM = 100 mA
Init’ I TM = -100 mA
5
-9
30
-30
mA
I L
Latching current
V supply = +12 V†
V supply = -12 V†
(see Note 7)
50
-50
mA
dv/dt
Critical rate of rise of
off-state voltage
V DRM = Rated V DRM I G = 0
T C = 110°C
±100
V/µs
dv/dt (c)
Critical rise of commu-
tation voltage
V DRM = Rated V DRM I TRM = ±12 A
T C = 85°C
±5
V/µs
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, t p = £ 1 ms, duty cycle £ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
R G = 100 W , t p(g) = 20 m s, t r = £ 15 ns, f = 1 kHz.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R q JC
Junction to case thermal resistance
1.8
°C/W
R q JA Junction to free air thermal resistance
62.5
°C/W
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
GATE TRIGGER VOLTAGE
vs
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC01AA
TC01AB
1000
10
V supply I GTM
+ +
+ -
- -
- +
V AA = ± 12 V
R L = 10 W
t p(g) = 20 µs
V supply I GTM
+ +
+ -
- -
- +
V AA = ± 12 V
R L = 10 W
t p(g) = 20 µs
100
10
1
1
0·1
-60 -40 -20 0
20 40 60 80 100 120
0·1
-60 -40 -20
0
20 40 60 80 100 120
T C - Case Temperature - °C
Figure 1.
T C - Case Temperature - °C
Figure 2.
PRODUCT INFORMATION
2
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TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
HOLDING CURRENT
GATE FORWARD VOLTAGE
vs
vs
CASE TEMPERATURE
GATE FORWARD CURRENT
TC01AD
TC01AC
1000
10
V su pply
+
-
V AA = ± 12 V
I G = 0
Initiating I TM = 100 mA
100
1
10
0·1
1
I A = 0
T C = 25 °C
QUADRANT 1
0·1
0·01
-60 -40 -20
0
20 40 60 80 100 120
0·0001
0·001
0·01
0·1
1
T C - Case Temperature - °C
Figure 3.
I GF - Gate Forward Current - A
Figure 4.
LATCHING CURRENT
SURGE ON-STATE CURRENT
vs
vs
CASE TEMPERATURE
CYCLES OF CURRENT DURATION
TC01AE
TI01AA
1000
100
V supply I GTM
+ +
+ -
- -
- +
V AA = ± 12 V
T C £ 85 °C
100
10
No Prior Device Conduction
Gate Control Guaranteed
10
1
1
-60 -40 -20 0
20 40 60 80 100 120
1
10
100
1000
T C - Case Temperature - °C
Consecutive 50-Hz Half-Sine-Wave Cycles
Figure 5.
Figure 6.
PRODUCT INFORMATION
3
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TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
MAX RMS ON-STATE CURRENT
MAX AVERAGE POWER DISSIPATED
vs
vs
CASE TEMPERATURE
TI01AB
RMS ON-STATE CURRENT
TI01AC
10
32
9
28
T J = 110 °C
Conduction Angle = 360 °
Above 8 A rms
8
24
See I TSM Figure
7
6
20
5
16
4
12
3
8
2
1
4
0
0
25
50
75
100
125
150
0
0
2
4
6
8
10
12
14
16
T C - Case Temperature - °C
Figure 7.
I T(RMS) - RMS On-State Current - A
Figure 8.
PARAMETER MEASUREMENT INFORMATION
V AC
L1
V AC
I TRM
I MT2
I MT2
C1
V MT2
V DRM
50 Hz
DUT
R G
See
Note A
R1
V MT2
10%
I G
dv/dt
63%
I G
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
Figure 9.
PMC2AA
PRODUCT INFORMATION
4
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TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
3,96
10,4
1,32
3,71
10,0
2,95
1,23
see Note B
2,54
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
14,1
1,70
12,7
0,97
0,61
1,07
1 2 3
2,74
0,64
2,34
0,41
5,28
2,90
4,88
2,40
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
MDXXBE
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
PRODUCT INFORMATION
5
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