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STANDARD TRIACS
)
T25xxxKS
STANDARD TRIACS
FEATURES
A1
I T(RMS) =25A
V DRM = 400V to 800V
INSULATING VOLTAGE 2500V (RMS)
(UL RECOGNIZED : E81734)
G
A2
DESCRIPTION
The T25xxxKS series triacs uses a high
performance MESA GLASS technology.
These parts are intended for general purpose
switching and phase control applications.
RD107
(Plastic)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
I T(RMS)
RMS on-state current
(360 ° conduction angle)
Tc= 85
°
C
25
A
I TSM
Non repetitive surge peak on-state current
(T j initial = 25 ° C)
tp = 8.3 ms
260
A
tp = 10 ms
250
I 2 t
I 2 t Value for fusing
tp = 10 ms
312
A 2 s
dI/dt
Critical rate of rise of on-state current
I G = 500 mA
Repetitive
F = 50 Hz
10
A/ m s
di G /dt = 1 A/
m
s.
Non
Repetitive
50
T stg
T j
Storage and operating junction temperature range
- 40, + 150
- 40, + 125
° C
Tl
Maximum lead temperature for soldering during 10s
260
° C
Symbol
Parameter
Unit
DMSN
Voltage
DRM
V RRM
Repetitive peak off-state voltage
T j = 125
400
600
700
800
V
C
January 1995
1/5
°
11010987.002.png
T25xxxKS
THERMAL RESISTANCES
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case for D.C
1.7
°
C/W
Rth(j-c)
Junction to case for A.C 360 ° conduction angle (F=50Hz)
1.3
° C/W
GATE CHARACTERISTICS (maximum values)
P G (AV) =1W P GM =10W(tp=20 m s)
I GM = 4 A (tp = 20 m s)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Sensitivity
Unit
12
13
I GT
V D =12V (DC) R L =33
W
Tj= 25
°
C
I-II-III
MAX
50
50
mA
IV
MAX
50
75
V GT
V D =12V (DC) R L =33 W
Tj= 25 ° C I-II-III-IV MAX
1.5
V
V GD
V D =V DRM R L =3.3k W
Tj= 125 ° C I-II-III-IV MIN
0.2
V
tgt
V D =V DRM I G = 500mA
I T =35A
dI G /dt = 3A/ m s
Tj= 25 ° C I-II-III-IV TYP
2
m s
I H *
I T = 250 mA Gate open
Tj= 25
°
C
MAX
50
75
mA
I L
I G =1.2I GT
Tj= 25 ° C
I-III-IV
TYP
50
75
mA
II
TYP
100
150
V TM *
I TM = 35A tp= 380
m
s
Tj= 25
°
C
MAX
1.5
V
I DRM
I RRM
V D =V DRM
V R =V RRM
Tj= 25 ° C
MAX
10
m A
Tj= 125 ° C
MAX
3
mA
dV/dt *
VD=67%V DRM
Gate open
Tj= 125
°
C
MIN
500
V/
m
s
(dV/dt)c * (dI/dt)c = 11 A/ms
Tj= 125 ° C
MIN
5
V/ m s
* For either polarity of electrode A 2 voltage with reference to electrode A 1
ORDERING INFORMATION
T52MKS
TRIAC MESA GLASS
PACKAGE :
KS = RD107
VOLTAGE
CURRENT
SENSITIVITY
2/5
)
11010987.003.png
T25xxxKS
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
P(W)
Tcase ( C)
o
35
35
Rth = 0 C/W
0.5 C/W
1.5 C/W
2.5 C/W
o
180 O
= 180 o
= 120 o
=90 o
=60 o
o
30
30
o
-85
o
25
25
-95
20
20
15
15
-105
=30 o
10
10
-115
5
5
I
(A)
Tamb ( C)
o
T(RMS)
0
0
-125
0
5
10
15
20
25
0 0000000
Fig.3 : RMS on-state current versus case tempera-
ture.
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
I
T(RMS)
(A)
Zth(j-c)/Rth(j-c)
30
1
25
20
15
= 180 o
0.1
10
5
Tcase ( C)
o
tp (s )
0
0.01
0 10 20 30 40 50 60 70 80 90 100 110 120 130
1E-3
1E-2
1E-1
1E +0
1 E+1
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
Igt[Tj]
Igt[Tj=25 C]
Ih[Tj]
Ih[Tj=25 C]
I
TSM
(A)
o
o
250
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Tj initial = 25 C
o
200
Igt
150
Ih
100
50
Tj( C)
o
Number of cycles
0
-40 -20
0
20 40
60
80 100 120 140
1
10
100
100 0
3/5
)
11010987.004.png
T25xxxKS
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp
Fig.8 : On-state characteristics (maximum values).
3
10ms, and
corresponding value of I 2 t.
I
TSM
(A). I 2 t(A 2 s)
I
TM
(A)
1000
1000
Tj initial = 25 C
o
I TSM
Tj in itia l
25 o
100
I 2
t
Tj max
10
Tj max
Vto =0.92V
Rt =0.0145
tp(ms)
V (V)
TM
100
1
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
4/5
)
11010987.005.png
T25xxxKS
PACKAGE MECHANICAL DATA
RD107 (Plastic)
a2
DIMENSIONS
Millimeters Inches
Typ. Min. Max. Typ. Min. Max.
G
H
L
REF.
b1
A
40.0
1.575
a1
29.9 30.3
1.177 1.193
C
a2
22.0
0.867
B
27.0
1.063
c2
c1
b1
24.0
0.945
a1
C
14.0
0.552
c1
3.5
0.138
c2
1.95 3.0
0.767 0.118
F
E
0.75 0.85
0.029 0.033
F
4.0 4.5
0.157 0.177
J
I
B
G
0.45 0.55
0.018 0.022
H
6.2 6.3
0.244 0.248
E
I
4.7 4.8
0.185 0.189
K
J
9.5 11.7
0.374 0.461
K 11.35
0.446
A
L
1.4 1.6
0.551 0.630
Marking : type number
Weight : 20 g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
{
1995 SGS-THOMSON Microelectronics - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
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)
11010987.001.png

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