2SC4742.pdf

2SC4742

Silicon NPN Triple Diffused

Application

Character display horizontal deflection output

Feature

High breakdown voltage

V CES = 1500 V

Built-in damper diode type

Outline

TO-3P

1. Base

2. Collector

(Flange)

3. Emitter

I D

2SC4742

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to emitter voltage

V CES

1500

Emitter to base voltage

V EBO

Collector current

I C

Collector peak current

I C(peak)

Collector surge current

I C(surge)

Collector power dissipation

P C * 1

Junction temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

C to E diode forward current

I D

Note: 1. Value at T C = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

Emitter to base breakdown

voltage

V (BR)EBO

——V

I E = 400 mA, I C = 0

Collector cutoff current

I CES

—

500

µA

V CE = 1500 V, R BE = 0

DC current transfer ratio

h FE

—— 25

V CE = 5 V, I C = 1 A

Collector to emitter saturation

voltage

V CE(sat)

—

2.0

I C = 5 A, I B = 1.25 A

Base to emitter saturation

voltage

V BE(sat)

—

1.5

I C = 5 A, I B = 1.25 A

C to E diode forward voltage V ECF

—

2.0

I F = 6 A

Fall time

t f

—

0.4

µs

I CP = 5 A, I B1 = 1 A, I B2 = –2 A

2SC4742

Maximum Collector Dissipation Curve

100

150

Case temperature T C ( ° C)

Area of Safe Operation

(100 V, 16 A)

f = 31.5 kHz

Ta = 25

For picture tube arcing

(800 V, 4 A)

0.5 mA

400

800 1,200 1,600 2,000

Collector to emitter voltage V CE (V)

Typical Output Characteristics

T C = 25 ° C

Pulse

I B = 0

2 4

Collector to emitter voltage V CE (V)

DC Current Transfer Ratio

vs. Collector Current

75 ° C

T C = –25 ° C

V CE = 5 V

Pulse

0.1

0.3 0.6 1.0

Collector current I C (A)

2SC4742

Collector to Emitter Saturation Voltage

vs. Collector Current

1.0

I C = 4 I B

Pulse

0.5

0.2

T C = –25

0.1

75 ° C

0.05

0.1

0.3 0.6 1.0

Collector current I C (A)

Base to Emitter Saturation Voltage

vs. Collector Current

I C = 4 I B

Pulse

1.0

T C = –25

0.5

0.2

0.1

0.3

0.6

1.0

Collector current I C (A)

Collector to Emitter Saturation Voltage

vs. Base Current

Ta = 25 ° C

Pulse

I C = 2 A

4 A 6 A

50 m 0.1

0.2

0.5

1.0

Base current I B (A)

2SC4742

When using this document, keep the following in mind:

1. This document may, wholly or partially, be subject to change without notice.

2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part

of this document without Hitachi’s permission.

3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any

other reasons during operation of the user’s unit according to this document.

4. Circuitry and other examples described herein are meant merely to indicate the characteristics and

performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any

intellectual property claims or other problems that may result from applications based on the

examples described herein.

5. No license is granted by implication or otherwise under any patents or other rights of any third party

or Hitachi, Ltd.

6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL

APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.

Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are

requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL

APPLICATIONS.

Hitachi, Ltd.

Semiconductor & IC Div.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan

Tel: Tokyo (03) 3270-2111

Fax: (03) 3270-5109

For further information write to:

Hitachi America, Ltd.

Semiconductor & IC Div.

2000 Sierra Point Parkway

Brisbane, CA. 94005-1835

U S A

Tel: 415-589-8300

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