TIP120-122 (darlington).pdf
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TIP120/121/122
Medium Power Linear Switching Applications
•
Complementary to TIP125/126/127
TO-220
1
1.Base 2.Collector 3.Emitter
NPN Epitaxial Darlington Transistor
Absolute Maximum Ratings
T
C
=25
°
C unless otherwise noted
Equivalent Circuit
C
Symbol
Parameter
Value
Units
V
CBO
Collector-Base Voltage : TIP120
: TIP121
: TIP122
60
80
100
V
V
V
B
V
CEO
Collector-Emitter Voltage : TIP120
: TIP121
: TIP122
60
80
100
V
V
V
V
EBO
Emitter-Base Voltage
5
V
R1
R2
I
C
Collector Current (DC)
5
A
R18k
E
≅
R20.12k
I
CP
Collector Current (Pulse)
8
A
I
B
Base Current (DC)
120
mA
P
C
Collector Dissipation (T
a
=25
C)
2
W
Collector Dissipation (T
C
=25
C)
65
W
T
J
Junction Temperature
150
C
T
STG
Storage Temperature
- 65 ~ 150
C
Electrical Characteristics
T
C
=25
°
C
unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Units
V
CEO
(sus)
Collector-Emitter Sustaining Voltage
: TIP120
: TIP121
: TIP122
I
C
= 100mA, I
B
= 0
60
80
100
V
V
V
I
CEO
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
V
CE
= 30V, I
B
= 0
V
CE
= 40V, I
B
= 0
V
CE
= 50V, I
B
= 0
0.5
0.5
0.5
mA
mA
mA
I
CBO
Collector Cut-off Current
: TIP120
: TIP121
: TIP122
V
CB
= 60V, I
E
= 0
V
CB
= 80V, I
E
= 0
V
CB
= 100V, I
E
= 0
0.2
0.2
0.2
mA
mA
mA
I
EBO
Emitter Cut-off Current
V
BE
= 5V, I
C
= 0
2
mA
h
FE
* DC Current Gain
V
CE
= 3V,I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
1000
1000
V
CE
(sat)
* Collector-Emitter Saturation Voltage
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
2.0
4.0
V
V
V
BE
(on)
* Base-Emitter ON Voltage
V
CE
= 3V, I
C
= 3A
2.5
V
C
ob
Output Capacitance
V
CB
= 10V, I
E
= 0, f = 0.1MHz
200
pF
* Pulse Test : PW
300
s, Duty cycle
2%
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Typical characteristics
10000
3.5
V
CE
= 4V
I
C
= 250I
B
3.0
2.5
1000
2.0
V
BE
(sat)
1.5
1.0
V
CE
(sat)
0.5
100
0.1
1
10
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
1000
10
f=0.1MHz
1
100
C
ob
0.1
TIP120
C
ib
TIP121
TIP122
10
0.1
1
10
100
0.01
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
V
EB
[V], EMITTER-BASE VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Output and Input Capacitance
vs. Reverse Voltage
Figure 4. Safe Operating Area
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
C
[
o
C], CASE TEMPERATURE
Figure 5. Power Derating
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
Package Demensions
TO-220
4.50
±
9.90
±
0.20
0.20
(8.70)
1.30
+0.10
–0.05
ø3.60
±
0.10
1.27
±
1.52
±
0.10
0.10
0.80
±
0.10
0.50
+0.10
–0.05
2.40
±
0.20
2.54TYP
[2.54
±
2.54TYP
[2.54
±
0.20
]
0.20
]
10.00
±
0.20
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
A
CEx™
Bottomless™
CoolFET™
CROSSVOLT
™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H3
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