2SC2570.pdf
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DATA SHEET
NPN SILICON TRANSISTOR
2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.
FEATURES
•
Low noise and high gain
: NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, V
CE
= 10 V, I
C
= 5.0 mA
•
Wide dynamic range
: NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, V
CE
= 10 V, I
C
= 15 mA
ORDERING INFORMATION
Part Number
Quantity
2SC2570A
Loose products (500 pcs)
2SC2570A-T
Taping products (Box type) (2 500 pcs)
Remark
To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 °C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V
CBO
25
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3.0
V
Collector Current
I
C
70
mA
Total Power Dissipation
P
tot
600
mW
Junction Temperature
T
j
150
°C
Storage Temperature
T
stg
–65 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P10404EJ3V0DS00 (3rd edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1980, 1999
2SC2570A
ELECTRICAL CHARACTERISTICS (T
A
= +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
h
FE
Note 1
DC Current Gain
V
CE
= 10 V, I
C
= 20 mA
40
–
200
–
Gain Bandwidth Product
f
T
V
CE
= 10 V, I
C
= 20 mA
–
5.0
–
GHz
Output Capacitance
C
Ob
Note 2
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
–
0.7
0.9
pF
2
Insertion Power Gain
|
S
21e
|
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
8
10
–
dB
Noise Figure
NF
V
CE
= 10 V, I
C
= 5 mA, f = 1.0 GHz
–
1.5
3.0
dB
Maximum Available Gain
MAG
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
–
11.5
–
dB
Collector Cutoff Current
I
CBO
V
CB
= 15 V, I
E
= 0
–
–
0.1
m
A
Emitter Cutoff Current
I
EBO
V
EB
= 2.0 V, I
C
= 0
–
–
0.1
A
m
Notes 1.
Pulse Measurement: PW
£
350
m
s, Duty Cycle
£
2%
2.
The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.
2
Data Sheet P10404EJ3V0DS00
2SC2570A
TYPICAL CHARACTERISTICS (T
A
= +25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
600
free Air
400
200
0
50 100
Operating Ambient Temperature T
A
(
°
C)
150
200
DC CURRENT GAIN vs.
COLLECTOR CURRENT
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
200
50
V
CE
= 10 V
V
CE
= 10 V
100
10
50
5
20
1
10
0.5
0.5
1
5
Collector Current I
C
(mA)
10
50
0.5
0.6 0.7
Base to Emitter Voltage V
BE
(V)
0.8
0.9
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
INSERTION GAIN vs.
COLLECTOR CURRENT
7
5
15
V
CE
= 10 V
f = 1.0 GH
Z
V
CE
= 10 V
2
10
1
0.5
5
0.2
0.1
0.5
0
0.5
1
5
Collector Current I
C
(mA)
10
50
70
1
5
Collector Current I
C
(mA)
10
50
70
3
Data Sheet P10404EJ3V0DS00
2SC2570A
OUTPUT AND INPUT
CAPACITANCE vs. REVERSE VOLTAGE
NOISE FIGURE vs.
COLLECTOR CURRENT
2
7
V
CE
= 10 V
f = 1.0 GH
Z
f = 1.0 MH
Z
6
5
1
C
ib
4
C
ob
3
2
0.5
1
0.3
0
0
0.5
0.5 1 2 5
Collector to Base Voltage V
CB
(V)
Emitter to Base Voltage V
EB
(V)
10
20
30
1
5
Collector Current I
C
(
m
A)
10
50 70
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY
V
CE
= 10 V
I
C
= 5 mA
V
CE
= 10 V
I
C
= 20 mA
20
20
G
max
G
max
S
21e
2
S
21e
2
10
10
0
0
0.1
0.2
0.4
0.6
0.8
1.0
2
0.1
0.2
0.4
0.6
0.8
1.0
2
Frequency f (GH
Z
)
Frequency f (GH
Z
)
S-PARAMETER
S-PARAMETER
V
CE
= 10 V
V
CE
= 10 V
0.12
0.12
0.38
0.38
90
90
I
C
= 5 mA
I
C
= 20 mA
Z
0
= 50
W
Z
0
= 50
W
1.5GH
Z
1.5G
H
Z
1.0
1
.
0
0
.
8
0.6
0.
8
0.6
0.4
1
.5GH
Z
1
.5GH
Z
0.4
RESISTANCE COMPONENT
R
Zo
S
11e
RESISTANCE COMPONENT
R
Zo
1.0
è
è
S
11e
1.0
0.4
0.2
0.4
0.2
S
22e
S
22e
0.2
0.2
4
Data Sheet P10404EJ3V0DS00
2SC2570A
PACKAGE DIMENSION
TO-92 (UNIT:mm)
5.2 MAX.
0.5
2.54
1.27
1
2
3
1. BASE
2. EMITTER
3. COLLECTOR
EIAJ
JEDEC
IEC
: SC-43B
: TO-92
: PA33
5
Data Sheet P10404EJ3V0DS00
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