fjaf6812.pdf

FJAF6812

High Voltage Color Display Horizontal

Deflection Output

• High Collector-Base Breakdown Voltage : BV CBO = 1500V

• High Switching Speed : t F (typ.) =0.1

• For Color Monitor

1.Base 2.Collector 3.Emitter

TO-3PF

NPN Triple Diffused Planar Silicon Transistor

Absolute Maximum Ratings T C =25 °

C unless otherwise noted

Symbol

Parameter

Rating

Units

V CBO

Collector-Base Voltage

1500

V CEO

Collector-Emitter Voltage

750

V EBO

Emitter-Base Voltage

I C

Collector Current (DC)

I CP *

Collector Current (Pulse)

P C

Collector Dissipation

T J

Junction Temperature

150

T STG

Storage Temperature

-55 ~ 150

* Pulse Test: PW=300

s, duty Cycle=2% Pulsed

Electrical Characteristics T C =25 °

C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

I CES

Collector Cut-off Current

V CB =1400V, R BE =0

I CBO

Collector Cut-off Current

V CB =800V, I E =0

I EBO

Emitter Cut-off Current

V EB =4V, I C =0

BV EBO

Emitter-Base Breakdown Voltage

I E =500

A, I C =0

h FE1

h FE2

DC Current Gain

V CE =5V, I C =1A

V CE =5V, I C =8A

V CE (sat)

Collector-Emitter Saturation Voltage

I C =8A, I B =2A

V BE (sat)

Base-Emitter Saturation Voltage

I C =8A, I B =2A

1.5

t STG *

Storage Time

V CC =200V, I C =7A, R L =30

t F *

Fall Time

I B1 = 1.4A, I B2 = - 2.8A

0.2

* Pulse Test: PW=20

s, duty Cycle=1% Pulsed

Thermal Characteristics T C =25 °

C unless otherwise noted

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction to Case

1.4

2.08

C/W

Rev. B1, May 2001

Typical Characteristics

100

125 o C 75 o C

Ib=1.8A

Ib=1.6A

Ib=1.4A

V CE = 5V

Ib=1.2A

Ib=1.0A

Ib=800mA

Ib=600mA

Ib=400mA

Ta= - 25 o C

25 o C

Ib=200mA

0.1

V CE [V], COLLECTOR-EMITTER VOLTAGE

I C [A], COLLECTOR CURRENT

Figure 1. Static Characteristics

Figure 2. DC Current Gain

100

I C = 5I B

I C = 3I B

125 o C

75 o C

0.1

25 o C

Ta = - 25 o C

0.1

25 o C

Ta = - 25 o C

0.01

0.1

I C [A], COLLECTOR CURRENT

Figure 3. Collector-Emitter Saturation Voltage

Figure 4. Collector-Emitter Saturation Voltage

V CE = 5V

t STG

125 o C

t F

0.1

RESISTIVE LOAD

Vcc = 200V

I C = 7A

I B1 = 1.4A

25 o C

75 o C

Ta = - 25 o C

0.01

-0.1

-1

-10

0.0

0.5

1.0

1.5

V BE [V], BASE-EMITTER VOLTAGE

I B2 [A], REVERSE BASE CURRENT

Figure 5. Base-Emitter On Voltage

Figure 6. Switching Time

Rev. B1, May 2001

Typical Characteristics (Continued)

100

I C (Pulsed)

T C = 25 o C

Single Pulse

10ms

1ms

300

I C (DC)

0.1

I B1 = 1.2A, I B2 = - 4A

V BE (off) = - 3V

L = 200

Single Pulse

0.01

100

1000

5000

100

1000

5000

V CE [V], COLLECTOR-EMITTER VOLTAGE

Figure 7. Forward Bias Safe Operating Area

Figure 8. Reverse Bias Safe Operating Area

100

125

150

175

T C [ o C], CASE TEMPERATURE

Figure 9. Power Derating

Rev. B1, May 2001

Package Demensions

TO-3PF

5.50 ±

0.20

15.50 ±

0.20

ø3.60 ±

0.20

3.00 ± 0.20

(1.50)

0.85 ±

0.03

2.00 ±

0.20

2.00 ±

0.20

2.00 ±

0.20

2.00 ±

0.20

4.00 ±

0.20

0.75 +0.20

–0.10

3.30 ±

0.20

5.45TYP

[5.45 ±

0.30 ]

5.45TYP

[5.45 ±

0.30 ]

0.90 +0.20

–0.10

Dimensions in Millimeters

Rev. B1, May 2001

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not

intended to be an exhaustive list of all such trademarks.

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DenseTrench™

DOME™

EcoSPARK™

E 2 CMOS™

EnSigna™

FACT™

FACT Quiet Series™

FAST ®

FASTr™

FRFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

PowerTrench ®

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SLIENT SWITCHER ®

SMART START™

Stealth™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

UltraFET ®

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

CORPORATION.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H2

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