BT132_SERIES_D_1.pdf

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Philips Semiconductors
Product specification
logic level
BT132 series D
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose
BT132- 500D 600D
bidirectional switching and phase
V DRM
Repetitive peak off-state voltages
500
600
V
control applications. These devices
I T(RMS)
RMS on-state current
1
1
A
are intended to be interfaced directly
I TSM
Non-repetitive peak on-state current
16
16
A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 2
T2
T1
2
gate
3
main terminal 1
321
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V DRM
Repetitive peak off-state
-
500 1
600 1
V
voltages
I T(RMS)
RMS on-state current
full sine wave; T lead
£
51 ˚C
-
1
A
I TSM
Non-repetitive peak
full sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 20 ms
-
16
A
t = 16.7 ms
-
17.6
A
I 2 t
I 2 t for fusing
t = 10 ms
-
1.28
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 1.5 A; I G = 0.2 A;
on-state current after
dI G /dt = 0.2 A/
m
s
triggering
T2+ G+
-
50
A/
m
s
T2+ G-
-
50
A/
m
s
T2- G-
-
50
A/
m
s
T2- G+
-
10
A/
m
s
I GM
Peak gate current
-
2
A
V GM
Peak gate voltage
-
5
V
P GM
Peak gate power
-
5
W
P G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
m
s.
January 1998
1
Rev 1.000
Triacs
22886798.006.png
Philips Semiconductors
Product specification
logic level
BT132 series D
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-lead
Thermal resistance
full cycle
-
-
60
K/W
junction to lead
half cycle
-
-
80
K/W
R th j-a
Thermal resistance
pcb mounted;lead length = 4mm
-
150
-
K/W
junction to ambient
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
T2+ G+
-
2.0
5
mA
T2+ G-
-
2.5
5
mA
T2- G-
-
2.5
5
mA
T2- G+
-
5.0
10
mA
I L
Latching current
V D = 12 V; I GT = 0.1 A
T2+ G+
-
1.6
10
mA
T2+ G-
-
4.5
15
mA
T2- G-
-
1.2
10
mA
T2- G+
-
2.2
15
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
1.2
10
mA
V T
On-state voltage
I T = 5 A
-
1.4
1.70
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.7
1.5
V
V D = 400 V; I T = 0.1 A; T j = 125 ˚C
0.25
0.4
-
V
I D
Off-state leakage current V D = V DRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
5
-
V/
m
s
off-state voltage
exponential waveform; R GK = 1 k
W
t gt
Gate controlled turn-on
I TM = 6 A; V D = V DRM(max) ; I G = 0.1 A;
-
2
-
m
s
time
dI G /dt = 5 A/
m
s
January 1998
2
Rev 1.000
Triacs
22886798.007.png
Philips Semiconductors
Product specification
logic level
BT132 series D
Ptot / W
BT132D
Tmb(max) / C
IT(RMS) / A
BT132D
1.4
41
1.2
1.2
=180
53
1
51 C
120
90
1
1
65
0.8
0.8
60
77
0.6
0.6
30
89
0.4
0.4
101
0.2
113
0.2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
125
0
-50
0
50
100
150
IT(RMS) / A
Tmb / C
Fig.1. Maximum on-state dissipation, P tot , versus rms
on-state current, I T(RMS) , where
a
= conduction angle.
Fig.4. Maximum permissible rms current I T(RMS) ,
versus lead temperature T lead .
1000
ITSM / A
BT132D
3
IT(RMS) / A
BT132D
I
T
I TSM
2.5
T
time
Tj initial = 25 C max
24
100
1.5
dI /dt limit
T
1
T2- G+ quadrant
0.5
10
10us
100us
1ms
10ms
100ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
20ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T lead
£
51˚C.
ITSM / A
BT136
VGT(Tj)
VGT(25 C)
20
BT136
1.6
I TSM
I
T
15
T
time
1.4
Tj initial = 25 C max
1.2
10
1
0.8
5
0.6
0
10
100
1000
0.4
-50
0
50
100
150
Number of cycles at 50Hz
Tj / C
Fig.3. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
January 1998
3
Rev 1.000
Triacs
0
0
22886798.008.png
Philips Semiconductors
Product specification
logic level
BT132 series D
IGT(Tj)
IGT(25 C)
12
IT / A
Tj = 125 C
Tj = 25 C
BT136
BT136D
3
T2+ G+
T2+ G-
T2- G-
T2- G+
10
typ
max
2.5
Vo = 1.27 V
Rs = 0.091 ohms
8
2
1.5
6
1
4
0.5
2
0
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
3
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
100
Zth j-sp (K/W)
BT134W
TRIAC
3
2.5
10
2
unidirectional
1
bidirectional
1.5
P
t p
1
D
0.1
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-lead , versus
pulse width t p .
IH(Tj)
IH(25C)
1000
dVD/dt (V/us)
TRIAC
3
2.5
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
January 1998
4
Rev 1.000
Triacs
22886798.009.png
Philips Semiconductors
Product specification
logic level
BT132 series D
MECHANICAL DATA
Dimensions in mm
2.54
Net Mass: 0.2 g
0.66
0.56
1.6
4.8 max
4.2 max
5.2 max
12.7 min
3
2
1
0.48
0.40
0.40
min
Fig.13. TO92 Variant; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
January 1998
5
Rev 1.000
Triacs
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