tda1517.pdf

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2 x 6 W stereo power amplifier
INTEGRATED CIRCUITS
DATA SHEET
TDA1517; TDA1517P
2
6 W stereo power amplifier
Product specification
Supersedes data of 1995 Dec 15
File under Integrated Circuits, IC01
1998 Apr 28
´
199643227.051.png
Philips Semiconductors
Product specification
2
´
6 W stereo power amplifier
TDA1517; TDA1517P
FEATURES
GENERAL DESCRIPTION
·
Requires very few external components
The TDA1517 is an integrated class-B dual output
amplifier in a plastic single in-line medium power package
with fin (SIL9MPF) and a plastic heat-dissipating dual
in-line package (HDIP18). The device is primarily
developed for multi-media applications.
·
High output power
·
Fixed gain
·
Good ripple rejection
·
Mute/standby switch
·
AC and DC short-circuit safe to ground and V P
·
Thermally protected
·
Reverse polarity safe
Capability to handle high energy on outputs (V P =0V)
· No switch-on/switch-off plop
·
Electrostatic discharge protection.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V P
supply voltage
6.0
14.4
18.0
V
I ORM
repetitive peak output current
-
-
2.5
A
I q(tot)
total quiescent current
-
40
80
mA
I sb
standby current
-
0.1
100
m A
I sw
switch-on current
-
-
40
m
A
Z I |
input impedance
50
-
-
k
W
P o
output power
R L =4
W
; THD = 0.5%
-
5
-
W
R L =4 W ; THD = 10%
-
6
-
W
SVRR
supply voltage ripple rejection
f i = 100 Hz to 10 kHz
48
-
-
dB
a cs
channel separation
40
-
-
dB
G v
closed loop voltage gain
19
20
21
dB
V no(rms)
noise output voltage (RMS value)
-
50
-
m V
T c
crystal temperature
-
-
150
°
C
ORDERING INFORMATION
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA1517
SIL9MPF plastic single in-line medium power package with fin; 9 leads
SOT110-1
TDA1517P
HDIP18 plastic heat-dissipating dual in-line package; 18 leads
SOT398-1
1998 Apr 28
2
·
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199643227.062.png
Philips Semiconductors
Product specification
2
´
6 W stereo power amplifier
TDA1517; TDA1517P
BLOCK DIAGRAM
handbook, full pagewidth
non-inverting
input 1
1
mute switch
C m
60
k W
4
output 1
VA
2
k W
18 k
W
power stage
V P
8
mute/stand-by
switch input
stand-by
switch
stand-by
reference
voltage
VA
15 k
W
x 1
mute
switch
supply voltage
ripple rejection
output
3
15 k
W
mute
reference
voltage
TDA1517
18 k
W
2
k W
VA
6
output 2
non-inverting
input 2
9
60
k W
C m
mute switch
input
reference
voltage
power stage
signal
ground
power
ground
(substrate)
2
7
5
MLC351
SGND
V P
PGND
Fig.1 Block diagram.
1998 Apr 28
3
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Philips Semiconductors
Product specification
2
´
6 W stereo power amplifier
TDA1517; TDA1517P
PINNING
SYMBOL
PIN
DESCRIPTION
-
INV1
1
non-inverting input 1
SGND
2
signal ground
SVRR
3
supply voltage ripple rejection output
OUT1
4
output 1
PGND
5
power ground
OUT2
6
output 2
V P
7
supply voltage
M/SS
8
mute/standby switch input
-
INV2
9
non-inverting input 2
ndbook, halfpage
INV1
1
ndbook, halfpage
INV1
1
18
SGND
2
SGND
2
17
SVRR
3
SVRR
3
16
OUT1
4
OUT1
4
15
PGND
5
TDA1517
PGND
5
TDA1517P
14
OUT2
6
OUT2
6
13
V
7
V
7
12
M/SS
8
M/SS
8
11
INV2
9
INV2
9
10
MLC352
MLC353
Pins 10 to 18 should be connected to GND or floating.
Fig.2 Pin configuration for SOT110-1.
Fig.3 Pin configuration for SOT398-1.
FUNCTIONAL DESCRIPTION
The TDA1517 contains two identical amplifiers with
differential input stages. The gain of each amplifier is fixed
at 20 dB. A special feature of the device is the
mute/standby switch which has the following features:
·
Low standby current (<100
m
A)
·
Low mute/standby switching current
(low cost supply switch)
·
Mute condition.
1998 Apr 28
4
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Philips Semiconductors
Product specification
2
´
6 W stereo power amplifier
TDA1517; TDA1517P
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V P
supply voltage
-
18
V
V P(sc)
AC and DC short-circuit safe voltage
-
18
V
V P(r)
reverse polarity
-
6
V
ERG O
energy handling capability at outputs
V P =0V
-
200
mJ
I OSM
non-repetitive peak output current
-
4
A
I ORM
repetitive peak output current
-
2.5
A
P tot
total power dissipation
see Fig.4
-
15
W
T stg
storage temperature
-
55
+150
°
C
T amb
operating ambient temperature
-
40
+85
°
C
T c
crystal temperature
-
150
°
C
THERMAL RESISTANCE
SYMBOL
TYPE NUMBER
PARAMETER
VALUE
UNIT
R th j-c
TDA1517
thermal resistance from junction to case
8
K/W
R th j-p
TDA1517P
thermal resistance from junction to pins
15
K/W
R th j-a
TDA1517; TDA1517P thermal resistance from junction to ambient 50
K/W
18
MLC354
handbook, halfpage
P
(W)
12
(1)
(2)
6
0
25
0
50
100
T ( C)
150
o
amb
(1) R th j-c = 8 K/W.
(2) R th j-p = 15 K/W.
Fig.4 Power derating curve.
1998 Apr 28
5
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