BC307_307B_1.pdf

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PNP general purpose transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
M3D186
BC307; BC307B
PNP general purpose transistors
Product specication
File under Discrete Semiconductors, SC04
1997 Mar 07
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Philips Semiconductors
Product specication
PNP general purpose transistors
BC307; BC307B
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
General purpose switching and amplification.
DESCRIPTION
handbook, halfpag 1
2
3
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC237 and BC237B.
3
2
MAM281
1
Fig.1 Simplified outline (TO-92; SOT54) and
symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
-
50
V
V CEO
collector-emitter voltage
open base
-
-
45
V
I CM
peak collector current
-
- 200
mA
P tot
total power dissipation
T amb £
25
°
C
-
500
mW
h FE
DC current gain
I C =
-
2 mA; V CE =
-
5V
BC307
125
455
BC307B
222
455
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz
100
-
MHz
1997 Mar 07
2
22885752.002.png 22885752.003.png
Philips Semiconductors
Product specication
PNP general purpose transistors
BC307; BC307B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
-
-
50
V
V CEO
collector-emitter voltage
open base
-
-
45
V
V EBO
emitter-base voltage
open collector
-
- 5
V
I C
collector current (DC)
-
-
100
mA
I CM
peak collector current
-
-
200
mA
I BM
peak base current
-
-
200
mA
P tot
total power dissipation
T amb £ 25 ° C; note 1
-
500
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Mar 07
3
22885752.004.png
Philips Semiconductors
Product specication
PNP general purpose transistors
BC307; BC307B
CHARACTERISTICS
T amb =25 ° C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
30 V;
-
-
15
nA
I E = 0; V CB = - 30 V; T j = 150 ° C
-
- 4
m A
I EBO
emitter cut-off current
I C = 0; V EB =
-
4V
-
-
15
nA
h FE
DC current gain
I C =
-
2 mA; V CE =
-
5 V; see Fig.2
BC307
125
455
BC307B
222
455
V CEsat
collector-emitter saturation voltage I C =
-
100 mA; I B =
-
5 mA; note 1
-
-
600
mV
V BEsat
base-emitter saturation voltage
I C =
-
100 mA; I B =
-
5 mA; note 1
-
-
1.1
V
V BE
base-emitter voltage
I C =
-
2 mA; V CE =
-
5 V; note 1
600
720
mV
C c
collector capacitance
I E =i e = 0; V CB = - 10 V; f = 1 MHz
-
3
pF
f T
transition frequency
I C =
-
10 mA; V CE =
-
5 V; f = 100 MHz;
100
-
MHz
note 1
F
noise gure
I C =
-
200
m
A; V CE =
-
5 V; R S =2k
W
;
-
10
dB
f = 1 kHz; B = 200 Hz
Note
1. Pulse test: t p £
300
m
s;
d£
0.02.
MBH727
400
handbook, full pagewidth
h FE
V CE = 5 V
300
200
100
0
10 - 2
10 - 1
10 2
10 3
1
10
I C (mA)
BC307B.
Fig.2 DC current gain; typical values.
1997 Mar 07
4
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Philips Semiconductors
Product specication
PNP general purpose transistors
BC307; BC307B
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e 1
D
e
3
b 1
L 1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b 1
0.66
0.56
c
D
d
E
e
e 1
L
L 1 (1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1997 Mar 07
5
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