BD136_138_140_3.pdf

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PNP power transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D100
BD136; BD138; BD140
PNP power transistors
Product specification
Supersedes data of 1997 Mar 26
1999 Apr 12
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Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
FEATURES
PINNING
·
High current (max. 1.5 A)
PIN
DESCRIPTION
·
Low voltage (max. 80 V).
1
emitter
2
collector, connected to metal part of
mounting surface
APPLICATIONS
·
General purpose power applications, e.g. driver stages
in hi-fi amplifiers and television circuits.
3
base
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complements: BD135, BD137 and BD139.
handbook, halfpage
2
3
1
123 Top view
MAM272
Fig.1 Simplified outline (TO-126; SOT32)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BD136
-
-
45
V
BD138
-
-
60
V
BD140
-
- 100
V
V CEO
collector-emitter voltage
open base
BD136
-
-
45
V
BD138
-
-
60
V
BD140
-
- 80
V
V EBO
emitter-base voltage
open collector
-
-
5
V
I C
collector current (DC)
-
-
1.5
A
I CM
peak collector current
-
-
2
A
I BM
peak base current
-
- 1
A
P tot
total power dissipation
T mb £
70
°
C
-
8
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
- 65
+150
° C
1999 Apr 12
2
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Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
100
K/W
R th j-mb
thermal resistance from junction to mounting base
10
K/W
Note
1. Refer to TO-126 (SOT32) standard mounting conditions.
CHARACTERISTICS
T j =25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
30 V
-
-
-
100 nA
I E = 0; V CB =
-
30 V; T j = 125
°
C
-
-
-
10
m
A
I EBO
emitter cut-off current
I C = 0; V EB = - 5V
-
-
- 100 nA
h FE
DC current gain
V CE =
-
2 V; (see Fig.2)
I C =
-
5mA
40
-
-
I=
-
150 mA
63
-
250
I C = - 500 mA
25
-
-
DC current gain
I C =
-
150 mA; V CE =
-
2V;
(see Fig.2)
BD136-10; BD138-10; BD140-10
63
-
160
BD136-16; BD138-16; BD140-16
100
-
250
V CEsat
collector-emitter saturation voltage I C = - 500 mA; I B = - 50 mA
-
-
- 0.5 V
V BE
base-emitter voltage
I C =
-
500 mA; V CE =
-
2V
-
-
-
1
V
f T
transition frequency
I C =
-
50 mA; V CE =
-
5V;
-
160
-
MHz
f = 100 MHz
h FE1
h FE2
DC current gain ratio of the
complementary pairs
ï
I C ï
= 150 mA;
ï
V CE ï
=2V
-
1.3
1.6
-----------
1999 Apr 12
3
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Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
MBH730
160
handbook, full pagewidth
h FE
V CE =
-
2 V
120
80
40
- 10 - 1
- 10 2
- 10 3
- 10 4
- 1
- 10
I C (mA)
Fig.2 DC current gain; typical values.
1999 Apr 12
4
0
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Philips Semiconductors
Product specification
PNP power transistors
BD136; BD138; BD140
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P 1
P
D
L 1
L
1
2
3
b p
w M
c
e 1
Q
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b p
c
D
E
e
e 1
L
L 1 (1)
max
Q
P
P 1
w
mm
2.7
2.3
0.88
0.65
0.60
0.45
11.1
10.5
7.8
7.2
4.58
2.29
16.5
15.3
2.54
1.5
0.9
3.2
3.0
3.9
3.6
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT32
TO-126
97-03-04
1999 Apr 12
5
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