BF872.PDF

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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D067
BF870; BF872
PNP high-voltage transistors
Product specication
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1996 Dec 09
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Philips Semiconductors
Product specication
PNP high-voltage transistors
BF870; BF872
FEATURES
·
Low feedback capacitance.
handbook, halfpage
APPLICATIONS
·
For use in class-B video output stages of colour
television receivers.
2
DESCRIPTION
3
PNP transistors in a TO-202 plastic package.
NPN complements: BF869 and BF871.
1
PINNING
PIN
DESCRIPTION
123
MBH792
1
emitter
2
collector, connected to mounting base
Fig.1 Simplified outline (TO-202) and symbol.
3
base
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BF870
-
-
250
V
BF872
-
- 300
V
V CEO
collector-emitter voltage
open base
BF870
-
-
250
V
BF872
-
-
300
V
I CM
peak collector current
-
- 100
mA
P tot
total power dissipation
T mb £
25
C
-
5
W
h FE
DC current gain
I C =
-
25 mA; V CE =
-
20 V; T j =25
°
C50
-
re
feedback capacitance
I C =i c = 0; V CE =
-
30 V; f = 1MHz
-
2.2
pF
f T
transition frequency
I C = - 10 mA; V CE = - 10 V; f = 100 MHz
60
-
MHz
1996 Dec 09
2
°
11068482.002.png 11068482.003.png 11068482.004.png
Philips Semiconductors
Product specication
PNP high-voltage transistors
BF870; BF872
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BF870
-
-
250
V
BF872
-
- 300
V
V CEO
collector-emitter voltage
open base
BF870
-
-
250
V
BF872
-
-
300
V
V EBO
emitter-base voltage
open collector
-
- 5
V
I C
collector current (DC)
-
-
50
nA
I CM
peak collector current
-
-
100
mA
I BM
peak base current
-
-
50
mA
P tot
total power dissipation
T amb £ 25 ° C
-
1.6
W
T mb £
25
°
C
-
5
W
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
- 65
+150
° C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
78
K/W
R th j-mb
thermal resistance from junction to mounting base
25
K/W
CHARACTERISTICS
T j =25
°
C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I CBO
collector cut-off current
I E = 0; V CB =
-
200 V
-
-
10
nA
I E = 0; V CB = - 200 V; T j = 150 ° C
-
- 10
m A
I EBO
emitter cut-off current
I C = 0; V EB =
-
5V
-
-
50
nA
h FE
DC current gain
I C =
-
25 mA; V CE =
-
20 V
50
-
V CEsat
collector-emitter saturation voltage I C =
-
30 mA; I B =
-
5mA
-
-
600
mV
C re
feedback capacitance
I C =i c = 0; V CE = - 30 V; f = 1MHz
-
2.2
pF
f T
transition frequency
I C =
-
10 mA; V CE =
-
10 V; f = 100 MHz 60
-
MHz
1996 Dec 09
3
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Philips Semiconductors
Product specication
PNP high-voltage transistors
BF870; BF872
PACKAGE OUTLINE
handbook, full pagewidth
10.4 max
3.8
3.6
0.56 ma x
3.8
24.2
max
8.6
max
2.5 m ax
(1)
2.4 max
12.2
min
123
0.8 (3x)
0.65 max
2.54
2.54
1.6
4.6
max
10
MGA322
Dimensions in mm.
(1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-202.
1996 Dec 09
4
0.6
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Philips Semiconductors
Product specication
PNP high-voltage transistors
BF870; BF872
DEFINITIONS
Data sheet status
Objective specication
This data sheet contains target or goal specications for product development.
Preliminary specication
This data sheet contains preliminary data; supplementary data may be published later.
Product specication
This data sheet contains nal product specications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specication
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specication.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Dec 09
5
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