2SC5423.pdf

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2SC5423_E
Power Transistors
2SC5423
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5 ± 0.5
3.0 ± 0.3
n
Features
f 3.2 ± 0.1
l
High breakdown voltage, and high reliability through the use of a
glass passivation layer
5 °
5 °
l
High-speed switching
l
Wide area of safe operation (ASO)
5 °
5
°
4.0
5 °
2.0 ± 0.2
n
Absolute Maximum Ratings (T C =25˚C)
Parameter
Collector to base voltage
1.1
±
0.1
0.7 ± 0.1
Symbol
V CBO
V CES
V CEO
V EBO
I CP
I C
I B
Ratings
1700
1700
600
5
30
15
10
100
3.5
150
–55 to +150
Unit
V
V
V
V
A
A
A
5.45 ± 0.3
5.45 ± 0.3
Collector to emitter voltage
5
°
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
123
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
T C =25°C
Ta=25°C
P C
W
T j
T stg
˚C
˚C
n
Electrical Characteristics (T C =25˚C)
Parameter
Symbol
Conditions
V CB = 1000V, I E = 0
V CB = 1500V, I E = 0
V EB = 5V, I C = 0
V CE = 5V, I C = 10A
I C = 10A, I B = 2.8A
I C = 10A, I B = 2.8A
V CE = 10V, I C = 0.1A, f = 0.5MHz
min
typ
max
50
1
50
12
3
1.5
Unit
mA
mA
mA
Collector cutoff current
I CBO
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
I EBO
h FE
V CE(sat)
V BE(sat)
f T
t stg
t f
5
V
V
MHz
ms
ms
3
I C = 12A, I B1 = 2.4A, I B2 = –4.8A
2.5
0.2
1
11048151.006.png 11048151.007.png 11048151.008.png 11048151.009.png 11048151.001.png 11048151.002.png 11048151.003.png 11048151.004.png
Power Transistors
2SC5423
P C — Ta
Area of safe operation (ASO)
Area of safe operation, horizontal operation ASO
140
100
50
(1) T C =Ta
(2) With a 100 ´ 100 ´ 2mm
Al heat sink.
(3) Without heat sink
f=64kHz, T C <90˚C
Area of safe operation with
respect to the single pulse
overload curve at the time of
switching ON, shutting down
by the high voltage spark,
holding down and like that,
during horizontal operation.
I CP
I C
t=100
µ
120
10ms
1ms
10
40
(1)
100
DC
1
30
80
60
0.1
20
40
0.01
10
20
(2)
Non repetitive pulse
T C =25˚C
(3)
<1mA
0
0.001
0
0
20
40
60
80
100
120
140
160
1
3
10
30
100
300
1000
0
500
1000
1500
2000
Ambient temperature Ta ( ˚C )
Collector to emitter voltage V CE ( V )
Collector to emitter voltage V CE ( V )
2
s
11048151.005.png

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