2N5064_1.pdf

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Philips Semiconductors
Product specification
sensitive gate
2N5064
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated sensitive gate
SYMBOL PARAMETER
MAX. UNIT
thyristor in a plastic envelope,
intended for use in general purpose
V DRM ,
Repetitive peak off-state voltages
200
V
switching and phase control
V RRM
applications. This device is intended
I T(AV)
Average on-state current
0.5
A
to be interfaced directly to
I T(RMS)
RMS on-state current
0.8
A
microcontrollers, logic integreated
I TSM
Non-repetitive peak on-state current
10
A
circuits and other low power gate
trigger circuits.
PINNING - TO92 variant
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1 anode
a
k
2 gate
3 cathode
321
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V DRM , V RRM Repetitive peak off-state
-
200
V
voltages
I T(AV)
Average on-state current half sine wave
T c
£
67 ˚C
-
0.51
A
T c
£
102 ˚C
-
0.255
A
I T(RMS)
RMS on-state current
all conduction angles
-
0.8
A
I TRM
Repetitive peak on-state
-
8
A
current
I TSM
Non-repetitive peak
half sine wave; T a = 25 ˚C prior to surge;
-
10
A
on-state current
t = 8.3 ms
I 2 t
I 2 t for fusing
t = 8.3 ms
-
0.4
A 2 s
I GM
Peak gate current
T a = 25˚C, t p = 300
m
s; f = 120 Hz
-
1
A
V GM
Peak gate voltage
-
5
V
V RGM
Peak reverse gate voltage
-
5
V
P GM
Peak gate power
T a = 25˚C
-
0.1
W
P G(AV)
Average gate power
T a = 25˚C, over any 16 ms period
-
0.01
W
T stg
Storage temperature
-65
150
˚C
T j
Operating junction
-65
125
˚C
temperature
October 1997
1
Rev 1.200
Thyristor
22885457.005.png
Philips Semiconductors
Product specification
sensitive gate
2N5064
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-c
Thermal resistance
see note: 1
-
-
75
K/W
junction to case
R th j-a
Thermal resistance
-
200
-
K/W
junction to ambient
unless otherwise stated
SYMBOL PARAMETER
W
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
T c = 25 ˚C
-
-
200
m
A
T c = -65 ˚C
-
-
350
m
A
V D = V DRM(max) ; R L = 100
W
; gate open
circuit
I L
Latching current
V D = 12 V; R GK = 1 k
W
-
-
6
A
I H
Holding current
V D = 12 V; R GK = 1 k
W
-
-
5
A
V T
On-state voltage
I T = 1.2 A peak; t p = 300
m
s;
d
£
0.01
-
-
1.7
V
V GT
Gate trigger voltage
T j = 25 ˚C
-
-
0.8
V
T j = -65 ˚C
-
-
1.2
V
T j = 125 ˚C
0.1
-
-
V
V D = V DRM(max) ; R L = 100
W
; gate open
circuit
I D , I R
Off-state leakage current V D = V DRM(max) ; V R = V RRM(max)
T j = 25 ˚C
-
-
10
m
A
T j = 125 ˚C
-
-
50
m
A
unless otherwise stated
SYMBOL PARAMETER
W
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
25
-
V/
m
s
off-state voltage
exponential waveform; R GK = 1 k
W
t gt
Gate controlled turn-on
I TM = 2 A; V D = V DRM(max) ; I G = 10 mA;
-
2
-
m
s
time
dI G /dt = 0.1 A/
m
s
t q
Circuit commutated
V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
100
-
m
s
turn-off time
I TM = 1.6 A; V R = 35 V; dI TM /dt = 30 A/
m
s;
dV D /dt = 2 V/
m
s; R GK = 1 k
W
1 This measurement is made with the case mounted "flat side down" on a heatsink and held in position by means of
a metal clamp over the curved surface.
October 1997
2
Rev 1.200
Thyristor
STATIC CHARACTERISTICS
T c = 25 ˚C, R GK = 1 k
DYNAMIC CHARACTERISTICS
T c = 25 ˚C, R GK = 1 k
22885457.006.png
Philips Semiconductors
Product specification
sensitive gate
2N5064
MECHANICAL DATA
Dimensions in mm
2.54
Net Mass: 0.2 g
0.66
0.56
1.6
4.8 max
4.2 max
5.2 max
2.5 max
12.7 min
3
2
1
0.48
0.40
0.40
min
Fig.1. TO92; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
October 1997
3
Rev 1.200
Thyristor
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Philips Semiconductors
Product specification
sensitive gate
2N5064
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Ó
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997
4
Rev 1.200
Thyristor
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
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