2n6400-d.pdf
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2N6400
2N6400 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls and power supplies; or wherever
half–wave silicon gate–controlled, solid–state devices are needed.
•
Glass Passivated Junctions with Center Gate Geometry for Greater
Parameter Uniformity and Stability
http://onsemi.com
SCRs
16 AMPERES RMS
50 thru 800 VOLTS
•
Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability
•
Blocking Voltage to 800 Volts
•
Device Marking: Logo, Device Type, e.g., 2N6400, Date Code
G
*MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
A
K
Symbol
Value
Unit
Peak Repetitive Off–State Voltage (Note 1.)
(T
J
=
V
DRM,
V
RRM
Volts
MARKING
DIAGRAM
C, Sine Wave
50 to 60 Hz; Gate Open)
40 to 125
°
2N6400
2N6401
2N6402
2N6403
2N6404
2N6405
50
100
200
400
600
800
4
TO–220AB
CASE 221A
STYLE 3
YY WW
640x
On-State RMS Current
(180
I
T(RMS)
16
A
°
Conduction Angles; T
C
= 100
°
C)
1
Average On-State Current
(180
°
Conduction Angles; T
C
= 100
°
C)
I
T(AV)
10
A
2
3
x = 0, 1, 2, 3, 4 or 5
YY = Year
WW = Work Week
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 90
°
C)
I
TSM
160
A
PIN ASSIGNMENT
Circuit Fusing (t = 8.3 ms)
I
2
t
145
A
2
s
1
2
3
Cathode
Forward Peak Gate Power
(Pulse Width
P
GM
20
Watts
Anode
Gate
3
1.0
m
s, T
C
= 100
°
C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 100
P
G(AV)
0.5
Watts
4
Anode
°
C)
Forward Peak Gate Current
(Pulse Width
3
1.0
m
s, T
C
= 100
°
C)
I
GM
2.0
A
ORDERING INFORMATION
Operating Junction Temperature Range
T
J
–40 to
+125
°
C
Device
Package
Shipping
2N6400
TO220AB
500/Box
Storage Temperature Range
T
stg
–40 to
+150
°
C
2N6401
TO220AB
500/Box
*Indicates JEDEC Registered Data.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2N6402
TO220AB
500/Box
2N6403
TO220AB
500/Box
2N6404
TO220AB
500/Box
2N6405
TO220AB
500/Box
Preferred
devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2001
April, 2001 – Rev. 2
1
Publication Order Number:
2N6400/D
W
2N6400 Series
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
q
JC
1.5
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
,
from Case for 10 Seconds
T
L
260
°
C
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
I
DRM
, I
RRM
T
J
= 25
°
C
T
J
= 125
°
C
–
–
–
–
10
2.0
m
A
mA
ON CHARACTERISTICS
*Peak Forward On–State Voltage
(I
TM
= 32 A Peak, Pulse Width
3
1 ms, Duty Cycle
3
2%)
V
TM
–
–
1.7
Volts
*Gate Trigger Current (Continuous dc)
T
C
= 25
°
C
I
GT
–
–
9.0
–
30
60
mA
(V
D
= 12 Vdc, R
L
= 100 Ohms)
T
C
= –40
°
C
*Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc, R
L
= 100 Ohms)
V
GT
Volts
T
C
= 25
°
C
T
C
= –40
–
–
0.7
–
1.5
2.5
°
C
Gate Non–Trigger Voltage
(V
D
= 12 Vdc, R
L
= 100 Ohms)
V
GD
Volts
T
C
= +125
°
C
0.2
–
–
*Holding Current
T
C
= 25
°
C
I
H
–
18
40
mA
(V
D
= 12 Vdc, Initiating Current = 200 mA,
Gate Open)
*T
C
= –40
°
C
–
–
60
Turn-On Time
(I
TM
= 16 A, I
GT
= 40 mAdc, V
D
= Rated V
DRM
)
t
gt
–
1.0
–
m
s
Turn-Off Time
(I
TM
= 16 A, I
R
= 16 A, V
D
= Rated V
DRM
)
t
q
m
s
T
C
= 25
°
C
T
J
= +125
°
C
–
–
15
35
–
–
DYNAMIC CHARACTERISTICS
Critical Rate–of–Rise of Off-State Voltage
(V
D
= Rated V
DRM
, Exponential Waveform)
dv/dt
–
50
–
V/
m
s
T
J
= +125
°
C
*Indicates JEDEC Registered Data.
http://onsemi.com
2
2N6400 Series
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol Parameter
V
DRM
V
TM
Peak Repetitive Off State Forward Voltage
on state
I
DRM
Peak Forward Blocking Current
I
H
I
RRM
at V
RRM
V
RRM
Peak Repetitive Off State Reverse Voltage
I
RRM
Peak Reverse Blocking Current
V
TM
Peak On State Voltage
+ Voltage
I
H
Holding Current
Reverse Blocking Region
(off state)
I
DRM
at V
DRM
Forward Blocking Region
Reverse Avalanche Region
Anode –
(off state)
128
16
180
°
124
14
120
°
T
J
9
125
°
C
a
90
°
dc
12
120
a
= CONDUCTION ANGLE
60
°
116
10
a
= 30
°
8.0
112
dc
6.0
108
4.0
104
180
°
2.0
a
a
= 30
°
60
°
90
°
120
°
a
= CONDUCTION ANGLE
100
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10
I
T(AV)
, AVERAGE ONSTATE FORWARD CURRENT (AMPS)
I
T(AV)
, AVERAGE ONSTATE FORWARD CURRENT (AMPS)
Figure 1. Average Current Derating
Figure 2. Maximum On–State Power Dissipation
http://onsemi.com
3
2N6400 Series
200
100
70
50
30
20
T
J
= 25
°
C
10
7.0
125
°
C
5.0
3.0
160
1 CYCLE
2.0
150
1.0
140
0.7
130
0.5
T
J
= 125
°
C
f = 60 Hz
120
0.3
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
0.2
110
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
4.4
1.0
2.0
3.0
4.0
6.0
8.0 10
v
TM
, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
NUMBER OF CYCLES
Figure 3. On–State Characteristics
Figure 4. Maximum Non–Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
Z
q
JC(t)
= R
q
JC
•
r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
100
200 300 500
1.0 k
2.0 k
3.0 k 5.0 k
10 k
t, TIME (ms)
Figure 5. Thermal Response
http://onsemi.com
4
2N6400 Series
TYPICAL CHARACTERISTICS
100
100
OFFSTATE VOLTAGE = 12 V
R
L
= 50
70
50
30
T
J
= -40
°
C
20
10
10
7.0
25
°
C
5.0
3.0
125
°
C
2.0
1.0
1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
-40
-25
-10
20
T
J
, JUNCTION TEMPERATURE (
°
C)
35
50
65
80
95
110
125
PULSE WIDTH (ms)
Figure 6. Typical Gate Trigger Current
versus Pulse Width
Figure 7. Typical Gate Trigger Current
versus Junction Temperature
1.0
100
0.9
0.8
0.7
0.6
10
0.5
0.4
0.3
0.2
-40
-25
-10
20
T
J
, JUNCTION TEMPERATURE (
°
C)
5
35
50
65
80
95
110
125
1
-40
-25
-10
5
20
35
50
65
80
95
110
125
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 9. Typical Holding Current
versus Junction Temperature
http://onsemi.com
5
5
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