2n6437-d.pdf

ON Semiconductor

High-Power PNP Silicon

Transistors

. . . designed for use in industrial–military power amplifier and

switching circuit applications.

•

2N6437

2N6438

*ON Semiconductor Preferred Device

High Collector–Emitter Sustaining Voltage —

V CEO(sus) = 100 Vdc (Min) — 2N6437

= 120 Vdc (Min) — 2N6438

25 AMPERE

POWER TRANSISTORS

PNP SILICON

100, 120 VOLTS

200 WATTS

•

High DC Current Gain —

h FE = 20–80 @I C = 10 Adc

= 12 (Min) @ I C = 25 Adc

•

Low Collector–Emitter Saturation Voltage —

V CE(sat) = 1.0 Vdc (Max) @ I C = 10 Adc

•

Fast Switching Times @ I C = 10 Adc

t r = 0.3

s (Max)

t s = 1.0

s (Max)

CASE 1–07

TO–204AA

(TO–3)

t f = 0.25

s (Max)

•

Complement to NPN 2N6339 thru 2N6341

MAXIMUM RATINGS (1)

Rating

Symbol ÎÎÎÎ

2N6437 ÎÎÎÎ

2N6438 ÎÎÎ

Unit

Collector–Base Voltage ÎÎÎÎ

V CB ÎÎÎÎ

120 ÎÎÎÎ

140 ÎÎÎ

Vdc

Collector–Emitter Voltage ÎÎÎÎ

V CEO ÎÎÎÎ

100 ÎÎÎÎ

120 ÎÎÎ

Vdc

Emitter–Base Voltage

V EB ÎÎÎÎÎÎÎ

6.0

Vdc

Collector Current — Continuous

Peak

I C

Adc

Base Current

I B ÎÎÎÎÎÎÎ

10 ÎÎÎ

Adc

Total Device Dissipation @ T C = 25 C

Derate above 25 C

P D ÎÎÎÎÎÎÎ

200

1.14

Watts

W/ C

Operating and Storage Junction

Temperature Range

T J ,T stg

–65 to +200

THERMAL CHARACTERISTICS

Characteristic ÎÎÎÎÎ

Symbol ÎÎÎÎÎÎ

Max ÎÎÎ

Unit

Thermal Resistance, Junction to Case ÎÎÎÎÎ

R q JC ÎÎÎÎÎÎ

0.875 ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

W Semiconductor Components Industries, LLC, 2001

April, 2001 – Rev. 2

Publication Order Number:

2N6437/D

2N6437 2N6438

200

175

150

125

100

0 0

100

125

150

175

200

T C , CASE TEMPERATURE ( ° C)

Figure 1. Power Derating

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2N6437 2N6438

*ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted)

Characteristic

Symbol ÎÎÎ

Min ÎÎÎÎ

Max ÎÎÎ

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(I C = 50 mAdc, I B = 0)

V CEO(sus) ÎÎÎ

Vdc

2N6437

2N6438

100

120

—

Collector Cutoff Current

(V CE = 50 Vdc, I B = 0)

I CEO ÎÎÎ

m Adc

2N6437

—

(V CE = 60 Vdc, I B = 0)

2N6438

Collector Cutoff Current

(V CE = 110 Vdc, V BE(off) = –1.5 Vdc)

I CEX

m Adc

2N6437

—

1.0

(V CE = 130 Vdc, V BE(off) = –1.5 Vdc)

2N6438

(V CE = 100 Vdc, V BE(off) = –1.5 Vdc, T C = 150 C)

2N6437

mAdc

(V CE = 120 Vdc, V BE(off) = –1.5 Vdc, T C = 150 C)

2N6438

Collector Cutoff Current

(V CB = 120 Vdc, I E = 0)

I CBO ÎÎÎ

m Adc

2N6437

—

(V CB = 140 Vdc, I E = 0)

2N6438

Emitter Cutoff Current (V EB = 6.0 Vdc, I C = 0)

I EBO

— ÎÎÎÎ

100 ÎÎÎ

m Adc

ON CHARACTERISTICS

DC Current Gain (1)

(I C = 0.5 Adc, V CE = 2.0 Vdc)

(I C = 10 Adc, V CE = 2.0 Vdc)

(I C = 25 Adc, V CE = 2.0 Vdc)

h FE ÎÎÎ

—

120

—

Collector–Emitter Saturation Voltage (1)

(I C = 10 Adc, I B = 1.0 Adc)

(I C = 25 Adc, I B = 2.5 Adc)

V CE(sat) ÎÎÎ

Vdc

—

1.0

1.8

Base–Emitter Saturation Voltage (1)

(I C = 10 Adc, I B = 1.0 Adc)

(I C = 25 Adc, I B = 2.5 Adc)

V BE(sat) ÎÎÎ

Vdc

—

1.8

2.5

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (I C = 1.0 Adc, V CE = 10 Vdc, f test = 10 MHz)

f T

40 ÎÎÎÎ

— ÎÎÎ

MHz

Output Capacitance (V CE = 10 Vdc, I E = 0, f = 100 kHz)

C ob

— ÎÎÎÎ

700 ÎÎÎ

SWITCHING CHARACTERISTICS

Rise Time (V CC = 80 Vdc, I C = 10 A, V BE(off) = 6.0 Vdc, I B1 = 1.0 Adc) ÎÎÎÎÎ

t r ÎÎÎ

— ÎÎÎÎ

0.3 ÎÎÎ

Storage (V CC = 80 Vdc, I C = 10 A, V BE(off) = 6.0 Vdc, I B1 = I B2 = 1.0 Adc) ÎÎÎÎÎ

t s ÎÎÎ

— ÎÎÎÎ

1.0 ÎÎÎ

m s

Fall Time (V CC = 80 Vdc, I C = 10 A,V BE(off) = 6.0 Vdc, I B1 = I B2 = 1.0 Adc)

t f

— ÎÎÎÎ

0.25 ÎÎÎ

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

300

s; Duty Cycle

2.0%.

V CC

0.3

+ 80 V

0.2

t d @ V BE(off) = 6.0 V

V CC = 80 V

I C /I B = 10

T J = 25 ° C

R C

8.0 OHMS

1.0

0.7

+ 9.0 V

R B =

10 OHMS

SCOPE

0.5

0.3

t r

- 11 V

m s

MBR74

0.2

0.1

0.07

t r , t f 10 ns

DUTY CYCLE = 1.0%

- 5.0 V

0.05

NOTE: For information on Figures 3 and 6, R B and R C were

varied to obtain desired test conditions.

0.03

0.3

0.5

0.7

1.0

2.0 3.0

5.0

7.0

I C , COLLECTOR CURRENT (AMP)

Figure 2. Switching Time Test Circuit

Figure 3. Turn–On Time

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2N6437 2N6438

1.0

0.7

0.5

D = 0.5

0.3

0.2

0.1

P (pk)

Z q JC (t) = r(t)R q JC

R q JC = 0.875 ° C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) - T C = P (pk) Z q JC (t)

0.1

0.07

0.05

0.03

0.02

0.05

0.02

t 1

0.01

t 2

DUTY CYCLE, D = t 1 /t 2

SINGLE

PULSE

0.01 0.01

0.02 0.03

0.05

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

100

200

300

500

1000

t, TIME OR PULSE WIDTH (ms)

Figure 4. Thermal Response

100

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate I C – V CE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on T J(pk) = 200

200 m s

1.0 ms

5.0 ms

5.0

T J = 200 ° C

2.0

C; T C is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided T J(pk)

1.0

BONDING WIRE LIMITED

THERMALLY LIMITED

T C = 25 ° C(SINGLE PULSE)

PULSE DUTY CYCLE 10%

SECOND BREAKDOWN LIM

ITED

CURVES APPLY

BELOW RATED V CEO

0.5

0.2

C. T J(pk) may be calculated from the data in

Figure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

200

0.1

0.05

2N6437

2N6438

0.02

0.01

2.0

3.0

5.0

7.0

100

200

V CE , COLLECTOREMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

3.0

4000

2.0

V CC = 80 V

I B1 = I B2

I C /I B = 10

T J = 25 ° C

3000

t s

C ib

T J = 25 ° C

1.0

2000

0.7

0.5

t f

C ob

1000

0.3

0.2

700

0.1

500

0.07

0.05

300

0.03

0.3

0.5

0.7 1.0

2.0

3.0

5.0

7.0

200

0.1

0.2

0.5

1.0 2.0

5.0

100

I C , COLLECTOR CURRENT (AMP)

V R , REVERSE VOLTAGE (VOLTS)

Figure 6. Turn-Off Time

Figure 7. Capacitance

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2N6437 2N6438

200

2.0

T J = 150 ° C

1.8

T J = 25 ° C

1.6

I C = 2.0 A

5.0 A

10 A

20 A

100

+ 25 ° C

1.4

1.2

-55 ° C

1.0

0.8

0.6

0.4

0.2

V CE = 2.0 V

V CE = 4.0 V

0.3

0.5

0.7 1.0

2.0 3.0

5.0

7.0

0.02

0.03

0.05

0.07

0.1

0.2 0.3

0.5

0.7

1.0

2.0

I C , COLLECTOR CURRENT (AMP)

I B , BASE CURRENT (AMP)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

2.0

+2.5

1.8

T J = 25 ° C

+2.0

*APPLIES FOR I C /I B h FE @V CE 2.0V

1.6

+1.5

1.4

+1.0

+25 ° C to +150 ° C

1.2

+0.5

* q VC FOR V CE(sat)

1.0

V BE(sat) @ I C /I B = 10

-55 ° C to +25 ° C

0.8

-0.5

+25 ° C to +150 ° C

0.6

V BE @ V CE = 2.0 V

-1.0

-1.5

q VB FOR V BE

0.4

0.2

V CE(sat) @ I C /I B = 10

-2.0

-55 ° C to + 25 ° C

0.3

0.5

0.7 1.0

2.0 3.0

5.0

7.0

-2.5

0.3

0.5

0.7 1.0

2.0 3.0

5.0

7.0

I C , COLLECTOR CURRENT (AMP)

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

10 2

10 1

T J = +150 ° C

V CE = 40 V

10 1

10 0

+100 ° C

10 -1

10 0

10 -1

V CE = 40 V

10 -2

+25 ° C

REVERSE

FORWARD

10 -2

10 -3

REVERSE

FORWARD

10 -3

+0.1

-0.1

-0.2

-0.3

-0.4

-0.5

+0.16

+0.08

-0.08

-0.16

-0.24

V BE , BASEEMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut-Off Region

Figure 13. Base Cutoff Region

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+0.2

10 -4

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