2n6768.pdf

PD - 90339F

IRF350

JANTX2N6768

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTORS

JANTXV2N6768

400V, N-CHANNEL

[REF:MIL-PRF-19500/543]

Product Summary

Part Number B VDSS R DS(on) I D

IRF350 400V 0.300Ω

14A

The HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

TO-3

Features:

Dynamic dv/dt Rating

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Absolute Maximum Ratings

Parameter

Units

I D @ V GS = 10V, T C = 25°C

Continuous Drain Current

1 4

I D @ V GS = 10V, T C = 100°C Continuous Drain Current

9.0

I DM

Pulsed Drain Current ➀

P D @ T C = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/°C

V GS

Gate-to-Source Voltage

±20

E AS

Single Pulse Avalanche Energy ➁

11.3

I AR

Avalanche Current ➀

E AR

Repetitive Avalanche Energy ➀

dv/dt

Peak Diode Recovery dv/dt ➂

4.0

V/ns

T J

Operating Junction

-55 to 150

T STG

Storage Temperature Range

Lead Temperature

o C

300 (0.063 in. (1.6mm) from case for 10s)

Weight

11.5 (typical)

For footnotes refer to the last page

www.irf.com

01/22/01

THRU-HOLE (TO-204AA/AE)

Repetitive Avalanche Ratings

IRF350

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

BV DSS

Drain-to-Source Breakdown Voltage

400

—

V GS = 0V, I D = 1.0mA

BV DSS /∆

T J Temperature Coefficient of Breakdown

—

0.46

—

V/°C

Reference to 25°C, I D = 1.0mA

Voltage

R DS(on)

Static Drain-to-Source On-State

—

— 0.300 V GS = 10V, I D =9.0A

Resistance

—

— 0.400

V GS =10V, I D =14A

V GS(th)

Gate Threshold Voltage

2.0

— 4.0 V V DS = V GS , I D =250µA

g fs

Forward Transconductance

6.0

—

S (

)

DS > 15V, I DS =9.0A

I DSS

Zero Gate Voltage Drain Current

—

2 5

V DS =320V, V GS =0V

—

250 V DS =320V

V GS = 0V, T J = 125°C

µ A

I GSS

Gate-to-Source Leakage Forward

—

100

V GS =20V

I GSS

Gate-to-Source Leakage Reverse

—

-100

V GS =-20V

Q g

Total Gate Charge

5 2

—

110

V GS =10V, ID = 14A

Q gs

Gate-to-Source Charge

5.0

—

1 8

V DS =200V

Q gd

Gate-to-Drain (‘Miller’) Charge

2 5

—

6 5

t d(on)

Turn-On Delay Time

—

3 5

V DD =200V, I D =14A,

t r

Rise Time

—

190

R G =2.35

t d(off)

Turn-Off Delay Time

—

170

t f

Fall Time

—

130

L S + L D

Total Inductance

—

6.1

—

Measured from the center of

drain pad to center of source

pad

C iss

Input Capacitance

—

2600

V GS = 0V, V DS =25V

C oss

Output Capacitance

—

680

—

f = 1.0MHz

C rss

Reverse Transfer Capacitance

—

250

—

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

I S

Continuous Source Current (Body Diode)

—

1 4

I SM

Pulse Source Current (Body Diode)

—— 6

V SD

Diode Forward Voltage

—

1.7

T j = 25°C, I S =14A, V GS = 0V ➃

t rr

Reverse Recovery Time

—

— 1200 nS

Tj = 25°C, I F =14A, di/dt ≤

100A/µ

Q RR Reverse Recovery Charge

—

250

µc

V DD ≤

50V ➃

t on

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

R thJC

Junction to Case

—

— 0.83

°C/W

R thJA

Junction to Ambient

—

3 0 Typical socket mount

For footnotes refer to the last page

www.irf.com

IRF350

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRF350

13 a& b

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRF350

V DS

R D

V GS

D.U.T.

R G

- V DD

10V

Pulse Width ≤

µs

Fig 10a. Switching Time Test Circuit

V DS

90%

10%

V GS

Fig 9. Maximum Drain Current Vs.

Case Temperature

t d(on) t r

t d(off) t f

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Duty Factor

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