2n6768.pdf
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irf034
PD - 90339F
IRF350
JANTX2N6768
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTORS
JANTXV2N6768
400V, N-CHANNEL
[REF:MIL-PRF-19500/543]
Product Summary
Part Number B
VDSS
R
DS(on)
I
D
IRF350 400V 0.300Ω
14A
The HEXFET
technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
Units
I
D
@ V
GS
= 10V, T
C
= 25°C
Continuous Drain Current
1 4
A
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
9.0
I
DM
Pulsed Drain Current
➀
56
P
D
@ T
C
= 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/°C
V
GS
Gate-to-Source Voltage
±20
V
E
AS
Single Pulse Avalanche Energy
➁
11.3
mJ
I
AR
Avalanche Current
➀
14
A
E
AR
Repetitive Avalanche Energy
➀
15
mJ
dv/dt
Peak Diode Recovery dv/dt
➂
4.0
V/ns
T
J
Operating Junction
-55 to 150
T
STG
Storage Temperature Range
Lead Temperature
o
C
300 (0.063 in. (1.6mm) from case for 10s)
Weight
11.5 (typical)
g
For footnotes refer to the last page
www.irf.com
1
01/22/01
THRU-HOLE (TO-204AA/AE)
Repetitive Avalanche Ratings
IRF350
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
V
V
GS
= 0V, I
D
= 1.0mA
BV
DSS
/∆
T
J
Temperature Coefficient of Breakdown
—
0.46
—
V/°C
Reference to 25°C, I
D
= 1.0mA
Voltage
R
DS(on)
Static Drain-to-Source On-State
—
— 0.300 V
GS
= 10V, I
D
=9.0A
Resistance
—
— 0.400
V
GS
=10V, I
D
=14A
V
GS(th)
Gate Threshold Voltage
2.0
— 4.0 V V
DS
= V
GS
, I
D
=250µA
g
fs
Forward Transconductance
6.0
—
—
S (
)
DS
> 15V, I
DS
=9.0A
I
DSS
Zero Gate Voltage Drain Current
—
—
2 5
V
DS
=320V, V
GS
=0V
—
—
250 V
DS
=320V
V
GS
= 0V, T
J
= 125°C
µ A
I
GSS
Gate-to-Source Leakage Forward
—
—
100
nA
V
GS
=20V
I
GSS
Gate-to-Source Leakage Reverse
—
—
-100
V
GS
=-20V
Q
g
Total Gate Charge
5 2
—
110
V
GS
=10V, ID
=
14A
Q
gs
Gate-to-Source Charge
5.0
—
1 8
nC
V
DS
=200V
Q
gd
Gate-to-Drain (‘Miller’) Charge
2 5
—
6 5
t
d(on)
Turn-On Delay Time
—
—
3 5
V
DD
=200V, I
D
=14A,
t
r
Rise Time
—
—
190
R
G
=2.35
ns
t
d(off)
Turn-Off Delay Time
—
—
170
t
f
Fall Time
—
—
130
L
S +
L
D
Total Inductance
—
6.1
—
nH
Measured from the center of
drain pad to center of source
pad
C
iss
Input Capacitance
—
2600
V
GS
= 0V, V
DS
=25V
C
oss
Output Capacitance
—
680
—
pF
f = 1.0MHz
C
rss
Reverse Transfer Capacitance
—
250
—
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
S
Continuous Source Current (Body Diode)
—
—
1 4
A
I
SM
Pulse Source Current (Body Diode)
—— 6
V
SD
Diode Forward Voltage
—
—
1.7
V
T
j
= 25°C, I
S
=14A, V
GS
= 0V
➃
t
rr
Reverse Recovery Time
—
— 1200 nS
Tj = 25°C, I
F
=14A, di/dt ≤
100A/µ
s
Q
RR
Reverse Recovery Charge
—
—
250
µc
V
DD
≤
50V
➃
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L
S
+ L
D
.
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
thJC
Junction to Case
—
— 0.83
°C/W
R
thJA
Junction to Ambient
—
—
3 0 Typical socket mount
For footnotes refer to the last page
2
www.irf.com
IRF350
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF350
13 a& b
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF350
V
DS
R
D
V
GS
D.U.T.
R
G
+
-
V
DD
10V
Pulse Width
≤
µs
Fig 10a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
Duty Factor
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