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LM747 Dual Operational Amplifier
November 1994
LM747
Dual Operational Amplifier
General Description
The LM747 is a general purpose dual operational amplifier.
The two amplifiers share a common bias network and power
supply leads. Otherwise, their operation is completely inde-
pendent.
Additional features of the LM747 are: no latch-up when in-
put common mode range is exceeded, freedom from oscilla-
tions, and package flexibility.
The LM747C/LM747E is identical to the LM747/LM747A
except that the LM747C/LM747E has its specifications
guaranteed over the temperature range from 0 § Cto a 70 § C
instead of b 55 § Cto a 125 § C.
Features
Y No frequency compensation required
Y Short-circuit protection
Y Wide common-mode and differential voltage ranges
Y Low power consumption
Y No latch-up
Y Balanced offset null
Connection Diagrams
Metal Can Package
Dual-In-Line Package
TL/H/11479±4
TL/H/11479±5
Order Number LM747CN or LM747EN
See NS Package Number N14A
Order Number LM747H
See NS Package Number H10C
*V a A and V a B are internally connected.
C 1995 National Semiconductor Corporation
TL/H/11479
RRD-B30M115/Printed in U. S. A.
90960207.003.png 90960207.004.png
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage
LM747/LM747A
Input Voltage (Note 2)
g 15V
Output Short-Circuit Duration
Indefinite
Operating Temperature Range
LM747/LM747A
b 55 § Cto a 125 § C
g 22V
LM747C/LM747E
0 § Cto a 70 § C
LM747C/LM747E
g 18V
Storage Temperature Range
b 65 § Cto a 150 § C
Power Dissipation (Note 1)
800 mW
Lead Temperature (Soldering, 10 sec.)
300 § C
Differential Input Voltage
g 30V
Electrical Characteristics (Note 3)
LM747A/LM747E
LM747
LM747C
Parameter
Conditions
Units
Min Typ Max Min Typ Max Min Typ Max
Input Offset Voltage T A e 25 § C
R S s 10 k X
1.0 5.0
2.0 6.0
mV
R S s 50 X
0.8 3.0
R S s 50 X
4.0
mV
R S s 10 k X
6.0
7.5
Average Input Offset
15
m V/ § C
Voltage Drift
Input Offset Voltage T A e 25 § C, V S e g 20V
g 10
g 15
g 15
mV
Adjustment Range
Input Offset Current T A e 25 § C
3.0 30
20 200
20 200
nA
70
85 500
300
Average Input Offset
0.5
nA/ § C
Current Drift
Input Bias Current
T A e 25 § C
30 80
80 500
80 500 nA
T AMIN s T A s T AMAX
0.210
1.5
0.8 m A
Input Resistance
T A e 25 § C, V S e g 20V 1.0 6.0
0.3 2.0
0.3 2.0
M X
V S e g 20V
0.5
Input Voltage Range T A e 25 § C
g 12
g 13
V
g 12
g 13
g 12
g 13
Large Signal
T A e 25 § C, R L t 2k X
Voltage Gain
V S e g 20V, V O e g 15V 50
V/mV
V S e g 15V, V O e g 10V
50 200
20 200
V/mV
R L t 2k X
V S e g 20V, V O e g 15V 32
V/mV
V S e g 15V, V O e g 10V
25
15
V/mV
V S e g 5V, V O e g 2V
10
V/mV
Output Voltage Swing V S e g 20V
R L t 10 k X
g 16
V
R L t 2k X
g 15
V S e g 15V
R L t 10 k X
g 12
g 14
g 12
g 14
V
R L t 2k X
g 10 g 13
g 10 g 13
Output Short
T A e 25 § C
10 25 35
25
25
mA
Circuit Current
10
40
Common-Mode
R S s 10 k X ,V CM e g 12V
70 90
70 90
dB
Rejection Ratio
R S s 50 k X ,V CM e g 12V 80 95
2
90960207.005.png
Electrical Characteristics (Note 3) (Continued)
LM747A/LM747E
LM747
LM747C
Parameter
Conditions
Units
Min Typ Max Min Typ Max Min Typ Max
Supply Voltage
V S e g 20V to V S e g 5V
Rejection Ratio
R S s 50 X
86
96
dB
R S s 10 k X
77 96
77 96
Transient Response
T A e 25 § C, Unity Gain
Rise Time
0.25 0.8
0.3
0.3
m s
Overshoot
6.0 20
5
5
%
Bandwidth (Note 4)
T A e 25 § C
0.437 1.5
MHz
Slew Rate
T A e 25 § C, Unity Gain
0.3 0.7
0.5
0.5
V/ m s
Supply Current/Amp
T A e 25 § C
2.5
1.7 2.8
1.7 2.8 mA
Power Consumption/Amp T A e 25 § C
V S e g 20V
80 150
mW
V S e g 15V
50 85
50 85
LM747A
V S e g 20V
T A e T AMIN
165
mW
T A e T AMAX
135
LM747E
V S e g 20V
150
T A e T AMIN
150
mW
T A e T AMAX
150
LM747
V S e g 15V
T A e T AMIN
60 100
mW
T A e T AMAX
45 75
Note 1: The maximum junction temperature of the LM747C/LM747E is 100 § C. For operating at elevated temperatures, devies in the TO-5 package must be
derated based on a thermal resistance of 150 § C/W, junction to ambient, or 45 § C/W, junction to case. The thermal resistance of the dual-in-line package is 100 § C/
W, junction to ambient.
Note 2: For supply voltages less than g 15V, the absolute maximum input voltage is equal to the supply voltage.
Note 3: These specifications apply for g 5V s V S s g 20V and b 55 § C s T A s 125 § C for the LM747A and 0 § C s T A s 70 § C for the LM747E unless otherwise
specified. The LM747 and LM747C are specified for V S e g 15V and b 55 § C s T A s 125 § C and 0 § C s T A s 70 § C, respectively, unless otherwise specified.
Note 4: Calculated value from: 0.35/Rise Time ( m s).
Schematic Diagram (Each Amplifier)
TL/H/11479±1
Note: Numbers in parentheses are pin numbers for amplifier B. DIP only.
3
90960207.006.png
Typical Performance Characteristics
Input Bias and Offset
Currents vs Ambient
DC Parameters
Common Mode Rejection
Temperature
vs Supply Voltage
Ratio vs Frequency
Output Swing and
Output Voltage Swing
Output Voltage Swing
Input Range vs
vs Frequency
vs Load Resistance
Supply Voltage
Normalized DC Parameters
Frequency Characteristics
vs Ambient Temperature
Transient Response
vs Ambient Temperature
Frequency Characteristics
Output Resistance
Open Loop Transfer
vs Supply Voltage
vs Frequency
Characteristics vs Frequency
TL/H/11479±2
4
90960207.001.png
 
Typical Performance Characteristics (Continued)
Input Resistance and
Input Capacitance
Broadband Noise for
vs Frequency
Various Bandwidths
Input Noise Voltage
and Current
Voltage Follower Large
vs Frequency
Signal Pulse Response
TL/H/11479±3
5
90960207.002.png
 
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