BT148W_SERIES_1.pdf

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22887407 UNPDF
Philips Semiconductors
Product specification
Thyristors
BT148W series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated, sensitive gate
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
thyristors in a plastic envelope
suitable for surface mounting,
BT148W- 400R 500R 600R
intended for use in general purpose
V DRM ,
Repetitive peak off-state
400
500
600
V
switching and phase control
V RRM
voltages
applications. These devices are
I T(AV)
Average on-state current
0.6
0.6
0.6
A
intended to be interfaced directly to
I T(RMS)
RMS on-state current
1
1
1
A
microcontrollers, logic integrated
I TSM
Non-repetitive peak on-state
10
10
10
A
circuits and other low power gate
current
trigger circuits.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
4
1
cathode
a
k
2
anode
3
gate
g
tab anode
1
2
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-400R -500R -600R
V DRM , V RRM Repetitive peak off-state
-
400 1
500 1
600 1
V
voltages
I T(AV)
Average on-state current half sine wave; T sp
£
112 ˚C
-
0.6
A
I T(RMS)
RMS on-state current
all conduction angles
-
1
A
I TSM
Non-repetitive peak
half sine wave; T j = 25 ˚C prior to
on-state current
surge
t = 10 ms
-
10
A
t = 8.3 ms
-
11
A
I 2 t
I 2 t for fusing
t = 10 ms
-
0.5
A 2 s
dI T /dt
Repetitive rate of rise of
I TM = 4 A; I G = 200 mA;
-
50
A/
m
s
on-state current after
dI G /dt = 200 mA/
m
s
triggering
I GM
Peak gate current
-
1
A
V GM
Peak gate voltage
-
5
V
V RGM
Peak reverse gate voltage
-
5
V
P GM
Peak gate power
-
1.2
W
P G(AV)
Average gate power
over any 20 ms period
-
0.12
W
T stg
Storage temperature
-40
150
˚C
T j
Operating junction
-
125 2
˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/
m
W
or less.
October 1997
1
Rev 1.300
logic level
s.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1k
22887407.004.png
Philips Semiconductors
Product specification
Thyristors
BT148W series
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
R th j-sp
Thermal resistance
-
-
15
K/W
junction to solder point
R th j-a
Thermal resistance
pcb mounted, minimum footprint
-
156
-
K/W
junction to ambient
pcb mounted, pad area as in fig:14
-
70
-
K/W
STATIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I GT
Gate trigger current
V D = 12 V; I T = 0.1 A
-
50
200
m
A
I L
Latching current
V D = 12 V; I GT = 0.1 A
-
0.17
10
mA
I H
Holding current
V D = 12 V; I GT = 0.1 A
-
0.10
6
mA
V T
On-state voltage
I T = 2 A
-
1.3
1.5
V
V GT
Gate trigger voltage
V D = 12 V; I T = 0.1 A
-
0.4
1.5
V
V R = V RRM(max) ; I T = 0.1 A; T j = 110 ˚C
0.1
0.2
-
V
I D , I R
Off-state leakage current V D = V DRM(max) ; V R = V RRM(max) ; T j = 125 ˚C
-
0.1
0.5
mA
DYNAMIC CHARACTERISTICS
T j = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
dV D /dt
Critical rate of rise of
V DM = 67% V DRM(max) ; T j = 125 ˚C;
-
50
-
V/
m
s
off-state voltage
exponential waveform; R GK = 100
W
t gt
Gate controlled turn-on
I TM = 4 A; V D = V DRM(max) ; I G = 5 mA;
-
2
-
m
s
time
dI G /dt = 0.2 A/
m
s
t q
Circuit commutated
V D = 67% V DRM(max) ; T j = 125 ˚C; I TM = 2 A;
-
100
-
m
s
turn-off time
V R = 35 V; dI TM /dt = 30 A/
m
s;
dV D /dt = 2 V/
m
s; R GK = 1 k
W
October 1997
2
Rev 1.300
logic level
22887407.005.png
Philips Semiconductors
Product specification
Thyristors
BT148W series
1
Ptot / W
BT148W
Tsp(max) / C
110
12
ITSM / A
BT148W
conduction
angle
form
factor
a = 1.57
I
I TSM
degrees
30
60
90
120
180
a
T
10
0.8
4
2.8
2.2
1.9
1.57
113
1.9
T
time
2.2
8
Tj initial = 25 C max
0.6
116
2.8
4
6
0.4
119
4
0.2
122
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
125
0
1
10
100
1000
IF(AV) / A
Number of cycles at 50Hz
Fig.1. Maximum on-state dissipation, P tot , versus
average on-state current, I T(AV) , where
a = form factor = I T(RMS) / I T(AV) .
Fig.4. Maximum permissible non-repetitive peak
on-state current I TSM , versus number of cycles, for
sinusoidal currents, f = 50 Hz.
1000
ITSM / A
BT148W
2
IT(RMS) / A
BT134W
1.5
100
1
10
I
T
I TSM
T
time
0.5
Tj initial = 25 C max
1
10ms
0
10us
100us
1ms
0.01
0.1
1
10
T / s
surge duration / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I TSM , versus pulse width t p , for
sinusoidal currents, t p
£
10ms.
Fig.5. Maximum permissible repetitive rms on-state
current I T(RMS) , versus surge duration, for sinusoidal
currents, f = 50 Hz; T sp
£
112˚C.
1.2
IT(RMS) / A
BT134W
VGT(Tj)
VGT(25 C)
BT151
1.6
112 C
1
1.4
0.8
1.2
0.6
1
0.4
0.8
0.2
0.6
0
-50
0
50
100
150
0.4
-50
0
50
100
150
Tsp / C
Tj / C
Fig.3. Maximum permissible rms current I T(RMS) ,
versus solder point temperature T sp .
Fig.6. Normalised gate trigger voltage
V GT (T j )/ V GT (25˚C), versus junction temperature T j .
October 1997
3
Rev 1.300
logic level
22887407.006.png 22887407.007.png
Philips Semiconductors
Product specification
Thyristors
BT148W series
IGT(Tj)
IGT(25 C)
5
IT / A
BT148W
BT148
3
Tj = 125 C
Tj = 25 C
2.5
4
Vo = 1.107 V
Rs = 0.14 Ohms
2
3
1.5
typ
max
2
1
0.5
1
-50
0
50
100
150
0
0
0.5
1
1.5
2
2.5
Tj / C
VT / V
Fig.7. Normalised gate trigger current
I GT (T j )/ I GT (25˚C), versus junction temperature T j .
Fig.10. Typical and maximum on-state characteristic.
IL(Tj)
IL(25 C)
100
Zth j-sp (K/W)
BT148W
BT145
3
2.5
10
2
1.5
1
P
t p
1
D
0.1
0.5
t
0
0.01
10us
0.1ms
1ms
10ms
0.1s
1s
10s
-50
0
50
100
150
Tj / C
tp / s
Fig.8. Normalised latching current I L (T j )/ I L (25˚C),
versus junction temperature T j .
Fig.11. Transient thermal impedance Z th j-sp , versus
pulse width t p .
IH(Tj)
IH(25 C)
1000
dVD/dt (V/us)
BT145
3
2.5
RGK = 100 ohms
2
100
1.5
1
10
0.5
0
-50
0
50
100
150
1
0
50
100
150
Tj / C
Tj / C
Fig.9. Normalised holding current I H (T j )/ I H (25˚C),
versus junction temperature T j .
Fig.12. Typical, critical rate of rise of off-state voltage,
dV D /dt versus junction temperature T j .
October 1997
4
Rev 1.300
logic level
0
22887407.001.png
Philips Semiconductors
Product specification
Thyristors
BT148W series
MOUNTING INSTRUCTIONS
Dimensions in mm.
3.8
min
1.5
min
1.5
min
(3x)
2.3
6.3
1.5
min
4.6
Fig.13. soldering pattern for surface mounting SOT223.
PRINTED CIRCUIT BOARD
Dimensions in mm.
36
18
60
9
4.6
4.5
10
7
15
50
Fig.14. PCB for thermal resistance and power rating for SOT223.
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35
m thick).
October 1997
5
Rev 1.300
logic level
m
22887407.002.png 22887407.003.png

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