LM112.PDF

September 1992

LM112/LM212/LM312 Operational Amplifiers

General Description

The LM112 series are micropower operational amplifiers

with very low offset-voltage and input-current errorsÐat

least a factor of ten better than FET amplifiers over a

b 55 § Cto a 125 § C temperature range. Similar to the LM108

series, that also use supergain transistors, they differ in that

they include internal frequency compensation and have pro-

visions for offset adjustment with a single potentiometer.

These amplifiers will operate on supply voltages of g 2V to

g 20V, drawing a quiescent current of only 300 m A. Per-

formance is not appreciably affected over this range of volt-

ages, so operation from unregulated power sources is easily

accomplished. They can also be run from a single supply

like the 5V used for digital circuits.

The LM112 series are the first IC amplifiers to improve reli-

ability by including overvoltage protection for the MOS com-

pensation capacitor. Without this feature, IC's have been

known to suffer catastrophic failure caused by short-dura-

tion overvoltage spikes on the supplies. Unlike other inter-

nally-compensated IC amplifiers, it is possible to overcom-

pensate with an external capacitor to increase stability mar-

gin.

The LM212 is identical to the LM112, except that the LM212

has its performance guaranteed over a b 25 § Cto a 85 § C

temperature range instead of b 55 § Cto a 125 § C. The

LM312 is guaranteed over a 0 § Cto a 70 § C temperature

range.

Features

Y Maximum input bias current of 3 nA over temperature

Y Offset current less than 400 pA over temperature

Y Low noise

Y Guaranteed drift specifications

Connection Diagram

Metal Can Package

TL/H/7751±4

Top View

Order Number LM112H, LM212H, LM312H or LM112H/883

See NS Package Number H08C

Auxiliary Circuits

Offset Balancing

Overcompensation for Greater Stability Margin

TL/H/7751±2

TL/H/7751±3

C 1995 National Semiconductor Corporation

TL/H/7751

RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required, please contact the

National Semiconductor Sales Office/Distributors for availability and

specifications.

(Note 5)

LM112/LM212

LM312

Supply Voltage

g 20V

g 18V

Power Dissipation (Note 1)

500 mW

Differential Input Current (Note 2)

g 10 mA

Input Voltage (Note 3)

g 15V

Output Short-Circuit Duration

Continuous

Operating Temperature Range

LM112

b 55 § Cto a 125 § C0 § Cto a 70 § C

LM212

b 25 § Cto a 85 § C

Storage Temperature Range

b 65 § Cto a 150 § C b 65 § Cto a 150 § C

Lead Temperature (Soldering, 10 sec.)

300 § C

ESD rating to be determined.

Electrical Characteristics (Note 4)

Parameter

Conditions

LM112/LM212

LM312

Units

Min Typ Max Min Typ Max

Input Offset Voltage

T A e 25 § C

0.7 2.0

2.0 7.5 mV

Input Offset Current

T A e 25 § C

0.05 0.2

0.2

Input Bias Current

T A e 25 § C

0.8 2.0

1.5

Input Resistance

T A e 25 § C

M X

Supply Current

T A e 25 § C

0.3 0.6

0.3 0.8 mA

Large Signal Voltage Gain

T A e 25 § C, V S e g 15V

300

25 300

V/mV

V OUT e g 10V, R L t 10 k X

Input Offset Voltage

3.0

10 mV

Average Temperature

Coefficient of Input

3.0 15

6.0 30 m V/ § C

Offset Voltage

Input Offset Current

0.4

1.5

Average Temperature

Coefficient of Input

0.5 2.5

2.0 10 pA/ § C

Offset Current

Input Bias Current

3.0

Supply Current

T A e 125 § C

0.15 0.4

Large Signal Voltage Gain

V S e g 15V, V OUT e g 10V

R L t 10 k X

V/mV

Output Voltage Swing

V S e g 15V, R L e 10 k X

g 13

g 14

g 13

g 14

g 14 V

Common-Mode Rejection Ratio 85 100 80 100 dB

Supply Voltage Rejection Ratio 80 96 80 96 dB

Note 1: The maximum junction temperature of the LM112 is 150 § C, LM212 is 100 § C and LM312 is 85 § C. For operating at elevated temperatures, devices in the H08

package must be derated based on a thermal resistance of 160 § C/W, junction to ambient, or 20 § C/W, junction to case.

Note 2: The inputs are shunted with shunt diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is

applied between the inputs unless some limiting resistance is used.

Note 3: For supply voltages less than g 15V, the absolute maximum input voltage is equal to the supply voltage.

Note 4: These specifications apply for g 5V s V S s g 20V and b 55 § C s T A s a 125 § C (LM112), b 25 § C s T A s a 85 § C (LM212), g 5V s V S s g 15V and

0 § C s T A s a 70 § C (LM312) unless otherwise noted.

Note 5: Refer to RETS112X for LM112H military specifications.

V S e g 15V

g 13.5

Input Voltage Range

Typical Performance Characteristics LM112/LM212

Input Currents

Offset Error

Drift Error

Closed Loop

Input Noise Voltage

Power Supply Rejection

Output Impedance

Voltage Gain

Output Swing

Supply Current

Open Loop Frequency

Large Signal Frequency

Voltage Follower Pulse

Response

TL/H/7751±5

Typical Performance Characteristics LM312

Input Currents

Offset Error

Drift Error

Closed Loop

Input Noise Voltage

Power Supply Rejection

Output Impedance

Voltage Gain

Output Swing

Supply Current

Open Loop Frequency

Large Signal Frequency

Voltage Follower Pulse

Response

TL/H/7751±6

Schematic Diagram

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