21231c.pdf
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16K SPI Bus Serial EEPROM
M
25AA160/25LC160/25C160
16K SPI
™
Bus Serial EEPROM
DEVICE SELECTION TABLE
DESCRIPTION
Part
Number
V
CC
Range
Max Clock
Frequency
Temp
Ranges
The Microchip Technology Inc. 25AA160/25LC160/
25C160 (25XX160
*
) are 16 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a sim-
ple Serial Peripheral Interface™ (SPI™) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. A
cce
ss to the device is controlled through a chip
select (CS) input.
Communi
cation
to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
25AA160
1.8 - 5.5V
1 MHz
I
25LC160
2.5 - 5.5V
2 MHz
I
25C160
4.5 - 5.5V
3 MHz
I,E
FEATURES
• Low power CMOS technology
- Write current: 3 mA maximum
- Read current: 500
µ
A typical
- Standby current: 500 nA typical
• 2048 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed ERASE and WRITE cycles
• Block write protection
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection
- Power on/off data protection circuitry
- Write enable latch
- Write protect pin
• Sequential read
• High reliability
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP and SOIC packages
• Temperature ranges supported:
PACKAGE TYPES
PDIP/SOIC
CS
SO
WP
1
2
3
8
7
6
V
CC
HOLD
SCK
V
SS
4
5
SI
BLOCK DIAGRAM
Status
Register
HV Generator
EEPROM
Array
Memory
Control
Logic
X
- Industrial (I):
-40
°
Cto +85
°
C
I/O Control
Logic
- Automotive (E) (25C160):
-40°C to +125°C
Dec
Page Latches
SI
SO
Y Decoder
CS
SCK
HO
LD
WP
Sense Amp.
R/W Control
V
CC
V
SS
*25XX160 is used in this document as a generic part number for the 25AA160/25LC160/25C160 devices.
SPI™ is a trademark of Motorola Inc.
2001 Microchip Technology Inc.
DS21231C-page 1
25AA160/25LC160/25C160
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings†
V
CC
.............................................................................................................................................................................7.0V
All inputs and outputs w.r.t. V
SS
.......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-65°C to 125°C
Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C
ESD protection on all pins ......................................................................................................................................... 4 KV
† NOTICE: Stresses above those listed under ‘Maximum ratings’ may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended
period of time may affect device reliability.
1.1
DC Characteristics
DC Characteristics
Industrial (I): T
AMB
= -40°C to +85°C V
CC
= 1.8V to 5.5V
Automotive (E):T
AMB
= -40°C to +125°C V
CC
= 4.5V to 5.5V (25C160 only)
Param.
No.
Sym.
Characteristics
Min.
Max.
Units
Conditions
D1
V
IH
1
High level input voltage
2.0
V
CC
+1
V
V
CC
≥
2.7V
(Note)
D2
V
IH
2
0.7 V
CC
V
CC
+1
V
V
CC
< 2.7V
(Note)
D3
V
IL
1
Low level input voltage
-0.3
0.8
V
V
CC
≥
2.7V
(Note)
D4
V
IL
2
-0.3
0.3 V
CC
V
CC
< 2.7V
(Note)
D5
V
OL
Low level output voltage
—
0.4
V
I
OL
= 2.1 mA
D6
V
OL
—
0.2
V
I
OL
= 1.0 mA, V
CC
< 2.5V
D7
V
OH
High level output
voltage
V
CC
-0.5
—
VI
OH
= -400
µ
A
D8
I
LI
Input leakage current
-10
10
µ
A
S
= V
CC
, V
IN
= V
SS
TO
V
CC
D9
I
LO
Output leakage current
-10
10
µ
AS = V
CC
, V
OUT
= V
SS
TO
V
CC
D10
C
INT
Internal Capacitance
(all inputs and outputs)
—
7
pF
T
AMB
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
D11
I
CC
Read
—
—
1
500
mA
µ
A
V
CC
= 5.5V; F
CLK
= 3.0 MHz; SO = Open
V
CC
= 2.5V; F
CLK
= 2.0 MHz; SO = Open
Operating Current
D12
I
CC
Write
—
—
5
3
mA
mA
V
CC
= 5.5V
V
CC
= 2.5V
D13
I
CCS
Standby Current
—
—
5
1
µ
A
µ
A
CS
= V
CC
= 5.5V, Inputs tied to V
CC
or V
SS
CS = V
CC
= 2.5V, Inputs tied to V
CC
or V
SS
Note:
This parameter is periodically sampled and not 100% tested.
DS21231C-page 2
2001 Microchip Technology Inc.
25AA160/25LC160/25C160
1.2
AC Characteristics
AC Characteristics
Industrial (I): T
AMB
= -40°C to +85°C
CC
= 1.8V to 5.5V
Automotive (E): T
AMB
= -40°C to +125°C
CC
= 4.5V to 5.5V (25C160 only)
Param.
No.
Sym.
Characteristic
Min.
Max.
Units
Conditions
1
F
CLK
Clock Frequency
—
—
—
3
2
1
MHz
MHz
MHz
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
2
T
CSS
CS Setup Time
100
250
500
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
3
T
CSH
CS Hold Time
150
250
475
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
4
T
CSD
CS Disable Time
500
—
ns
—
5
T
SU
Data Setup Time
30
50
50
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
6
T
HD
Data Hold Time
50
100
100
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
7
T
R
CLK Rise Time
—
2
µ
s
(Note 1)
8
T
F
CLK Fall Time
—
2
µ
s
(Note 1)
9
T
HI
Clock High Time
150
230
475
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
10
T
LO
Clock Low Time
150
230
475
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
11
T
CLD
Clock Delay Time
50
—
ns
—
12
T
CLE
Clock Enable Time
50
—
ns
—
13
T
V
Output Valid from Clock
Low
—
—
—
150
230
475
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
14
T
HO
Output Hold Time
0
—
ns
(Note 1)
15
T
DIS
Output Disable Time
—
—
—
200
250
500
ns
ns
ns
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 4.5V
(Note 1)
V
CC
= 1.8V to 2.5V
(Note 1)
16
T
HS
HOLD Setup Time
100
100
200
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
17
T
HH
HOLD Hold Time
100
100
200
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
18
T
HZ
HOLD Low to Output High-Z
100
150
200
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
(Note 1)
V
CC
= 2.5V to 4.5V
(Note 1)
V
CC
= 1.8V to 2.5V
(Note 1)
19
T
HV
HOLD High to Output Valid
100
150
200
—
—
—
ns
ns
ns
V
CC
= 4.5V to 5.5V
V
CC
= 2.5V to 4.5V
V
CC
= 1.8V to 2.5V
20
T
WC
Internal Write Cycle Time
—
5
ms
—
21
—
Endurance
1 M
—
E/W
Cycles
(Note 2)
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific application, please
consult the Total Endurance Model which can be obtained on our website: www.microchip.com.
2001 Microchip Technology Inc.
DS21231C-page 3
25AA160/25LC160/25C160
FIGURE 1-1: HOLD TIMING
CS
16
17
16
17
SCK
1
8
19
SO
n+2
n+1
n
high impedance
n
n-1
don’t care
5
SI
n+2
n+1
n
n
n-1
HOLD
FIGURE 1-2: SERIAL INPUT TIMING
4
CS
12
2
7
11
3
M
ode 1
,1
Mode 0,0
8
SCK
5
6
SI
MSB in
LSB in
SO
high impedance
FIGURE 1-3: SERIAL OUTPUT TIMING
CS
9
10
3
M
od
e 1,1
Mod
e 0,0
SCK
13
14
15
SO
MSB out
ISB out
SI
don’t care
DS21231C-page 4
2001 Microchip Technology Inc.
25AA160/25LC160/25C160
1.3
AC Test Conditions
FIGURE 1-4: AC TEST CIRCUIT
AC Waveform:
V
LO
= 0.2V —
V
HI
= V
CC
- 0.2V
(Note 1)
V
HI
= 4.0V
(Note 2)
Timing Measurement Reference Level
Input
V
CC
2.25 K
Ω
SO
0.5 V
CC
1.8 K
100 pF
Ω
Output
0.5 V
CC
Note 1:
For V
CC
≤
4.0V
2:
For V
CC
> 4.0V
2001 Microchip Technology Inc.
DS21231C-page 5
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