BC549_550_3.pdf

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NPN general purpose transistors
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 20
1999 Apr 22
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
FEATURES
PINNING
·
Low current (max. 100 mA)
PIN
DESCRIPTION
·
Low voltage (max. 45 V).
1
emitter
2
base
APPLICATIONS
3
collector
·
Low noise stages in audio frequency equipment.
DESCRIPTION
handbook, halfpag 1
2
3
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 and BC560.
3
2
MAM182
1
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V CBO
collector-base voltage
open emitter
BC549
-
30
V
BC550
-
50
V
V CEO
collector-emitter voltage
open base
BC549
-
30
V
BC550
-
45
V
V EBO
emitter-base voltage
open collector
-
5
V
I C
collector current (DC)
-
100
mA
I CM
peak collector current
-
200
mA
I BM
peak base current
-
200
mA
P tot
total power dissipation
T amb £
25
°
C; note 1
-
500
mW
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
° C
T amb
operating ambient temperature
-
65
+150
°
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 22
2
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient
note 1
250
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T j =25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
I CBO
collector cut-off current
I E = 0; V CB =30V
-
-
15
nA
I E = 0; V CB =30V; T j = 150
°
C
-
-
5
m
A
I EBO
emitter cut-off current
I C = 0; V EB =5V
-
-
100
nA
h FE
DC current gain
BC549C; BC550C
I C =10
m
A; V CE = 5 V; see Fig.2
-
270
-
I C = 2 mA; V CE = 5 V; see Fig.2
420
520
800
V CEsat
collector-emitter saturation voltage I C = 10 mA; I B = 0.5 mA
-
90
250
mV
I C = 100 mA; I B =5mA
-
200
600
mV
V BEsat
base-emitter saturation voltage
I C = 10 mA; I B = 0.5 mA; note 1
-
700
-
mV
I C = 100 mA; I B = 5 mA; note 1
-
900
-
mV
V BE
base-emitter voltage
I C = 2 mA; V CE = 5 V; note 2
580
660
700
mV
I C = 10 mA; V CE = 5 V; note 2
-
-
770
mV
C c
collector capacitance
I E =i e = 0; V CB = 10 V; f = 1 MHz
-
1.5
-
pF
C e
emitter capacitance
I C =i c = 0; V EB = 0.5 V; f = 1 MHz
-
11
-
pF
f T
transition frequency
I C = 10 mA; V CE =5V;
f = 100 MHz
100
-
-
MHz
F
noise figure
I C = 200 m A; V CE =5V;
R S =2k
-
-
4
dB
W
; f = 10 Hz to 15.7 kHz
I C = 200
m
A; V CE =5V;
-
-
4
dB
R S =2k
W
; f = 1 kHz; B = 200 Hz
Notes
1. V BEsat decreases by about 1.7 mV/K with increasing temperature.
2. V BE decreases by about 2 mV/K with increasing temperature.
1999 Apr 22
3
°
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
MBH725
600
handbook, full pagewidth
V CE = 5 V
h FE
400
200
10 - 2
10 - 1
10 2
10 3
1
10
I C (mA)
BC549C; BC550C.
Fig.2 DC current gain; typical values.
1999 Apr 22
4
0
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Philips Semiconductors
Product specification
NPN general purpose transistors
BC549; BC550
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
c
E
d
A
L
b
1
2
e 1
D
e
3
b 1
L 1
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b 1
0.66
0.56
c
D
d
E
e
e 1
L
L 1 (1)
mm
5.2
5.0
0.48
0.40
0.45
0.40
4.8
4.4
1.7
1.4
4.2
3.6
2.54
1.27
14.5
12.7
2.5
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT54
TO-92
SC-43
97-02-28
1999 Apr 22
5
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