1N4531_2.pdf

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High-speed diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D050
1N4531; 1N4532
High-speed diodes
Product specification
Supersedes data of April 1996
1996 Sep 03
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Philips Semiconductors
Product specification
High-speed diodes
1N4531; 1N4532
FEATURES
DESCRIPTION
·
Hermetically sealed leaded glass
SOD68 (DO-34) package
The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar
technology, and encapsulated in hermetically sealed leaded glass
SOD68 (DO-34) packages.
·
High switching speed: max. 4 ns
·
Continuous reverse voltage:
max. 75 V
·
Repetitive peak reverse voltage:
max. 75 V
handbook, halfpage
k
a
·
Repetitive peak forward current:
max. 450 mA.
MAM156
APPLICATIONS
The diodes are type branded.
·
High-speed switching
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
·
Protection diodes in reed relays.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V RRM
repetitive peak reverse voltage
-
75
V
V R
continuous reverse voltage
-
75
V
I F
continuous forward current
see Fig.2
-
200
mA
I FRM
repetitive peak forward current
-
450
mA
I FSM
non-repetitive peak forward current square wave; T j =25 ° C prior to
surge; see Fig.4
t=1
m
-
4
A
t=1ms
-
1
A
t=1s
-
0.5 A
P tot
total power dissipation
T amb =25
°
C
-
500
mW
T stg
storage temperature
-
65
+200
C
T j
junction temperature
-
200
C
1996 Sep 03
2
s
°
°
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Philips Semiconductors
Product specification
High-speed diodes
1N4531; 1N4532
ELECTRICAL CHARACTERISTICS
T j =25 ° C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V F
forward voltage
I F = 10 mA; see Fig.3
-
1000 mV
I R
reverse current
see Fig.5
IN4531
V R =20V
-
25 nA
V R =20V; T j = 150
°
C
-
50
m
A
IN4532
V R =50V
-
100 nA
V R =50V; T j = 150 ° C
-
100
m A
C d
diode capacitance
f = 1 MHz; V R = 0; see Fig.6
IN4531
-
4F
IN4532
-
2F
t rr
reverse recovery time
when switched from I F = 10 mA to
I R = 60 mA; R L = 100
IN4531
;
measured at I R = 1 mA; see Fig.7
W
-
4s
IN4532
-
2s
reverse recovery time
when switched from I F = 10 mA to
I R = 10 mA; R L = 100 W ;
measured at I R = 1 mA; see Fig.7
IN4532
-
4s
fr
forward recovery voltage
when switched from I F = 100 mA;
t r £
-
3V
30 ns; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-tp
thermal resistance from junction to tie-point lead length 5 mm
120
K/W
R th j-a
thermal resistance from junction to ambient lead length 5 mm; note 1
350
K/W
Note
1. Device mounted on a printed circuit-board without metallization pad.
1996 Sep 03
3
22884352.048.png
Philips Semiconductors
Product specification
High-speed diodes
1N4531; 1N4532
GRAPHICAL DATA
MBG450
MBG458
300
600
handbook, halfpage
handbook, halfpage
I F
(mA)
I F
(mA)
200
400
(1)
(2)
(3)
100
200
0
0
0
100
T amb ( o C)
200
0
1
V F (V)
2
C; typical values.
(3) T j =25 ° C; maximum values.
°
Lead length 5 mm.
Fig.2 Maximum permissible continuous forward
current as a function of ambient temperature.
Fig.3 Forward current as a function of forward
voltage.
10 2
MBG704
handbook, full pagewidth
I FSM
(A)
10
1
10 - 1
1
10
10 2
10 3
t p ( m s)
10 4
Based on square wave currents.
T j =25
C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1996 Sep 03
4
(1) T j = 175 ° C; typical values.
(2) T j =25
°
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Philips Semiconductors
Product specification
High-speed diodes
1N4531; 1N4532
10 3
MGD010
MGD004
1.2
handbook, halfpage
I R
handbook, halfpage
(
m
A)
C d
(pF)
10 2
1.0
10
0.8
1
10 - 1
0.6
10 - 2
0.4
0
100
200
T j ( o C)
0
10
20
V R (V)
V R =50V
Solid line; maximum values.
Dotted line; typical values.
f = 1 MHz; T j =25 ° C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1996 Sep 03
5
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