BAS40_4.pdf

(64 KB) Pobierz

Schottky barrier (double) diodes

DISCRETE SEMICONDUCTORS

DATA SHEET

age

M3D088

M3D071

BAS40 series

Schottky barrier (double) diodes

Product speciﬁcation

Supersedes data of 1997 Oct 24

1999 Apr 28

22885089.064.png

22885089.075.png

22885089.086.png

22885089.097.png

22885089.001.png

22885089.012.png

22885089.016.png

22885089.017.png

22885089.018.png

22885089.019.png

22885089.020.png

22885089.021.png

22885089.022.png

22885089.023.png

22885089.024.png

22885089.025.png

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAS40 series

FEATURES

PINNING SOT23 (see Fig.1a)

·

Low forward voltage

DESCRIPTION

·

Guard ring protected

PIN

BAS40

(see Fig.1b)

BAS40-04

(see Fig.1c)

BAS40-05

(see Fig.1d)

BAS40-06

(see Fig.1e)

·

Small plastic SMD package

·

Low diode capacitance.

1

a 1

a 1

a 1

k 1

APPLICATIONS

2

n.c.

k 2

a 2

k 2

3

k 1

k 1 ,a 2

k 1 ,k 2

a 1 ,a 2

·

Ultra high-speed switching

·

Voltage clamping

·

Protection circuits

·

Blocking diodes.

handbook, 2 columns

3

handbook, 2 columns

3

DESCRIPTION

1

2

MGC485

Planar Schottky barrier diodes with an

integrated guard ring for stress

protection. Single diodes and double

diodes with different pinning are

available. The diodes BAS40,

BAS40-04, BAS40-05 and BAS40-06

are encapsulated in a SOT23 small

plastic SMD package. The BAS40-07

is encapsulated in a SOT143B small

plastic SMD package

1

2

c. BAS40-04

Top view

MGC482

handbook, 2 columns

3

a. Simplified outline SOT23.

1

2

MGC484

d. BAS40-05.

handbook, 2 columns

3

handbook, 2 columns

3

MARKING

1

2

n.c.

MGC483

1

2

TYPE NUMBER

MARKING

CODE (1)

MGC486

b. BAS40 single diode.

e. BAS40-06.

BAS40

43

*

BAS40-04

44

*

Fig.1 Simplified outline (SOT23) and symbols.

BAS40-05

45

*

BAS40-06

46 *

BAS40-07

47p

Note

1.

* = p: Made in Hong Kong.

*

handbook, half page 4

3

= t: Made in Malaysia.

4

3

PINNING SOT143B (see Fig.2)

PIN

DESCRIPTION

1

2

1

2

BAS40-07

1

Top view

MAM194

k 1

2

k 2

3

a 2

Fig.2 Simplified outline (SOT143B) BAS40-07 and symbol.

4

a 1

1999 Apr 28

2

22885089.026.png

22885089.027.png

22885089.028.png

22885089.029.png

22885089.030.png

22885089.031.png

22885089.032.png

22885089.033.png

22885089.034.png

22885089.035.png

22885089.036.png

22885089.037.png

22885089.038.png

22885089.039.png

22885089.040.png

22885089.041.png

22885089.042.png

22885089.043.png

22885089.044.png

22885089.045.png

22885089.046.png

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAS40 series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per diode

V R

continuous reverse voltage

-

40

V

I F

continuous forward current

-

120

mA

I FRM

repetitive peak forward current

t p £

1s;

d£

0.5

-

120

mA

I FSM

non-repetitive peak forward current

t p <

10 ms

-

200

mA

T stg

storage temperature

-

65

+150

°

C

T j

junction temperature

-

150

°

C

T amb

operating ambient temperature

- 65

+150

°

C

ELECTRICAL CHARACTERISTICS

T amb =25

°

C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

Per diode

V F

forward voltage

see Fig.3

I F =1mA

380

mV

I F =10mA

500

mV

I F =40mA

1

V

I R

reverse current

V R = 30 V; note 1; see Fig.4

1

m A

V R = 40 V; note 1; see Fig.4

10

m A

C d

diode capacitance

f = 1 MHz; V R = 0 ; see Fig.6

5

pF

Note

1. Pulse test: t p = 300

m

s;

d

= 0.02.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R th j-a

thermal resistance from junction to ambient note 1

500

K/W

Note

1. Refer to SOT23 or SOT143B standard mounting conditions.

1999 Apr 28

3

22885089.047.png

22885089.048.png

22885089.049.png

22885089.050.png

22885089.051.png

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAS40 series

GRAPHICAL DATA

10 2

MLC361 - 1

10 3

MLC362

handbook, halfpage

handbook, halfpage

I R

I F

(mA)

(

m

A)

(1)

10 2

10

10

1

(1) (2) (3)

(4)

(2)

1

10

1

10 - 1

(3)

10

2

10 - 2

0

10

20

30

40

0

0.2

0.4

0.6

0.8

1.0

V R (V)

V (V)

(1) T amb = 150 ° C.

(2) T amb =85

°

C.

(1) T amb = 150 ° C.

(2) T amb =85 ° C.

(3) T amb =25

C.

(4) T amb = - 40 ° C.

°

C.

Fig.3 Forward current as a function of forward

voltage; typical values.

Fig.4 Reverse current as a function of reverse

voltage; typical values.

MLC364

MLC363

10 3

5

handbook, halfpage

handbook, halfpage

C d

(pF)

r diff

(

W

)

4

10 2

3

2

10

1

1

0

10 2

0

10

20

30

40

10

1

1

10

I (mA)

F

V R (V)

f = 10 kHz.

f = 1 MHz T amb =25

°

C.

Fig.5 Differential forward resistance as a function

of forward current; typical values.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1999 Apr 28

4

F

(3) T amb =25

°

22885089.052.png

22885089.053.png

22885089.054.png

22885089.055.png

22885089.056.png

22885089.057.png

22885089.058.png

22885089.059.png

22885089.060.png

22885089.061.png

22885089.062.png

22885089.063.png

22885089.065.png

22885089.066.png

22885089.067.png

22885089.068.png

22885089.069.png

22885089.070.png

22885089.071.png

22885089.072.png

22885089.073.png

22885089.074.png

22885089.076.png

22885089.077.png

22885089.078.png

22885089.079.png

22885089.080.png

22885089.081.png

22885089.082.png

22885089.083.png

22885089.084.png

22885089.085.png

22885089.087.png

22885089.088.png

22885089.089.png

22885089.090.png

22885089.091.png

22885089.092.png

22885089.093.png

22885089.094.png

22885089.095.png

22885089.096.png

22885089.098.png

22885089.099.png

22885089.100.png

22885089.101.png

22885089.102.png

22885089.103.png

22885089.104.png

22885089.105.png

22885089.106.png

22885089.107.png

22885089.002.png

22885089.003.png

22885089.004.png

22885089.005.png

22885089.006.png

22885089.007.png

22885089.008.png

22885089.009.png

22885089.010.png

22885089.011.png

Philips Semiconductors

Product speciﬁcation

Schottky barrier (double) diodes

BAS40 series

PACKAGE OUTLINES

Plastic surface mounted package; 3 leads

SOT23

D

B

E

A

X

H E

v M A

3

Q

A

A 1

1

2

c

e 1

b p

w M

B

L p

e

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

A 1

max.

b p

c

D

E

e

e 1

H E

L p

Q

v

w

mm

1.1

0.9

0.1

0.48

0.38

0.15

0.09

3.0

2.8

1.4

1.2

1.9

0.95

2.5

2.1

0.45

0.15

0.55

0.45

0.2

0.1

OUTLINE

VERSION

REFERENCES

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

SOT23

97-02-28

1999 Apr 28

5

22885089.013.png

22885089.014.png

22885089.015.png

Plik z chomika:

Inne pliki z tego folderu:

bav70.pdf (86 KB)
bzv55xx.pdf (63 KB)
1N4001G.PDF (50 KB)
BA157.pdf (24 KB)
BA282.PDF (42 KB)

Inne foldery tego chomika:

Zgłoś jeśli naruszono regulamin