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Schottky barrier (double) diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D102
BAS40W series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1997 Oct 28
1999 Apr 26
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Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
FEATURES
PINNING
·
Low forward voltage
BAS40
PIN
·
Guard ring protected
W -04W -05W -06W
3
·
Very small SMD package
1
a 1
a 1
a 1
k 1
1
2
·
Low diode capacitance.
2
n.c.
k 2
a 2
k 2
MLC358
3
k 1 k 1 ,a 2 k 1 ,k 2 a 1 ,a 2
APPLICATIONS
·
Ultra high-speed switching
Fig.3 BAS40-04W diode
configuration (symbol).
·
Voltage clamping
handbook, 2 columns
3
·
Protection circuits
·
Blocking diodes.
DESCRIPTION
Planar Schottky barrier diodes
encapsulated in a SOT323 very small
plastic SMD package. Single diodes
and double diodes with different
pinning are available.
3
1
2
1
2
Top view
MBC870
MLC359
Fig.1 Simplified outline
(SOT323) and pin
configuration.
Fig.4 BAS40-05W diode
configuration (symbol).
MARKING
TYPE NUMBER
MARKING
CODE
BAS40W
63
3
3
BAS40-04W
64
1
2
n.c.
MLC357
1
2
BAS40-05W
65
MLC360
BAS40-06W
66
Fig.2 BAS40W single diode
configuration (symbol).
Fig.5 BAS40-06W diode
configuration (symbol).
1999 Apr 26
2
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Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
Per diode
V R
continuous reverse voltage
-
40
V
I F
continuous forward current
-
120
mA
I FRM
repetitive peak forward current
t p £
1s;
d£
0.5
-
120
mA
I FSM
non-repetitive peak forward current
t p <
10 ms
-
200
mA
T stg
storage temperature
- 65
+150
° C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
-
65
+150
°
C
ELECTRICAL CHARACTERISTICS
T amb =25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V F
continuous forward voltage
see Fig.6
I F = 1 mA
380
mV
I F = 10 mA
500
mV
I F =40mA
1
V
I R
continuous reverse current
V R = 30 V; note 1; see Fig.7
1
m
A
V R = 40 V; note 1; see Fig.7
10
m A
t
charge carrier life time
I F = 5 mA; Krakauer method
100
ps
C d
diode capacitance
V R = 0; f = 1 MHz; see Fig.9
5
pF
Note
1. Pulse test: t p = 300
m
s;
d
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
625
K/W
Note
1. Refer to SOT323 standard mounting conditions.
1999 Apr 26
3
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Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
GRAPHICAL DATA
10 2
MLC361 - 1
10 3
MLC362
handbook, halfpage
handbook, halfpage
I R
I F
(mA)
(
m
A)
(1)
10 2
10
10
(1) (2) (3)
(4)
(2)
1
1
10
1
10 - 1
(3)
10
2
10 - 2
0
10
20
30
40
0
0.2
0.4
0.6
0.8
1.0
V R (V)
V (V)
F
C.
(3) T amb =25 ° C.
(4) T amb = - 40 ° C.
°
(1) T amb = 150 ° C.
(2) T amb =85
C.
(3) T amb =25
C.
Fig.6 Forward current as a function of forward
voltage; typical values.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
MLC364
MLC363
10 3
5
handbook, halfpage
handbook, halfpage
C d
(pF)
r diff
(
W
)
4
10 2
3
2
10
1
1
0
10 2
0
10
20
30
40
10 1
1
10
V R (V)
I (mA)
F
f = 10 KHz.
f = 1 MHz; T amb =25
°
C.
Fig.8 Differential forward resistance as a function
of forward current; typical values.
Fig.9 Diode capacitance as a function of reverse
voltage; typical values.
1999 Apr 26
4
(1) T amb = 150 ° C.
(2) T amb =85
°
°
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Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS40W series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT323
D
B
E
A
X
y
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max
b p
c
D E
e
e 1
E
L p
Q
v
w
mm
1.1
0.8
0.1
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
1.3
0.65
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT323
SC-70
97-02-28
1999 Apr 26
5
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