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Low-leakage diode
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BAS45AL
Low-leakage diode
Product specification
Supersedes data of 1999 May 04
1999 May 28
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
FEATURES
DESCRIPTION
·
Continuous reverse voltage:
max. 125 V
Epitaxial medium-speed switching diode with a low leakage current in a small
SOD80C glass SMD package.
·
Repetitive peak forward current:
max. 625 mA
·
Low reverse current: max. 1 nA
handbook, 4 columns
k
a
·
Switching time: typ. 1.5
m
s.
APPLICATION
MAM061
·
Low leakage current applications.
Fig.1 Simplified outline (SOD80C) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
125
V
V
R
continuous reverse voltage
-
125
V
I
F
continuous forward current
note 1; see Fig.2
-
250
mA
I
FRM
repetitive peak forward current
-
625
mA
I
FSM
non-repetitive peak forward current square wave; T
j
=25
°
C prior to
surge; see Fig.4
t
p
=1
m
s
-
4
A
t
p
=1ms
-
1
A
t
p
=1s
-
0.5
A
P
tot
total power dissipation
T
amb
=25
°
C; note 1
-
400
mW
T
stg
storage temperature
-
65
+175
°
C
T
j
junction temperature
-
175
°
C
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.3
I
F
=1mA
-
780
mV
I
F
=10mA
-
860
mV
I
F
= 100 mA
-
1000
mV
I
R
reverse current
see Fig.5
V
R
= 125 V; E
max
= 100 lx
-
1
nA
V
R
= 30 V; T
j
= 125
°
C; E
max
= 100 lx
-
300
nA
V
R
= 125 V; T
j
= 125
°
C; E
max
= 100 lx
-
500
nA
V
R
= 125 V; T
j
= 150
°
C; E
max
= 100 lx
-
2
m
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
4
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
1.5
-
m
s
;
measured at I
R
= 1 mA; see Fig.7
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
300
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
375
K/W
Note
1. Device mounted on a FR4 printed-circuit board.
1999 May 28
3
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
GRAPHICAL DATA
MBG522
300
MBG523
300
handbook, halfpage
handbook, halfpage
I
F
(mA)
I
F
(mA)
(1)
(2) (3)
200
200
100
100
0
0
0
100
T
amb
(
o
C)
200
0
0.5
1.0
V
F
(V)
1.5
Device mounted on a FR4 printed-circuit board.
(1) T
j
= 150
°
C; typical values.
(2) T
j
=25
°
C; typical values.
(3) T
j
=25
°
C; maximum values.
Fig.2 Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3 Forward current as a function of forward
voltage; typical values.
10
2
MBG704
handbook, full pagewidth
I
FSM
(A)
10
1
10
-
1
1
10
10
2
10
3
t
p
(
m
s)
10
4
Based on square wave currents; T
j
=25
°
C prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 28
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS45AL
MBD456
MBG524
10
4
3
handbook, halfpage
handbook, halfpage
I
R
(nA)
C
d
(pF)
10
3
max
2
10
2
10
typ
1
1
10
1
0
50
100
150
0
0
5
10
15
20
o
V
R
(V)
T ( C)
j
V
R
= 125 V.
f = 1 MHz; T
j
=25
°
C.
Fig.5 Reverse current as a function of junction
temperature.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
handbook, full pagewidth
t
r
t
p
t
D.U.T.
10%
R = 50
S
W
I
F
I
F
t
rr
SAMPLING
OSCILLOSCOPE
t
V = V I x R
RF S
R = 50
i
W
90%
(1)
V
R
MGA881
input signal
output signal
Fig.7 Reverse recovery time test circuit and waveforms.
1999 May 28
5
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