BAS70_5.pdf

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Schottky barrier (double) diodes
DISCRETE SEMICONDUCTORS
DATA SHEET
age
M3D088
M3D071
BAS70 series
Schottky barrier (double) diodes
Product specification
Supersedes data of 1996 Oct 01
1999 Jun 01
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Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
FEATURES
PINNING
·
Low forward current
DESCRIPTION
·
High breakdown voltage
SOT23
SOT143B
PIN
·
Guard ring protected
BAS70
(see Fig.1b)
BAS70-04
(see Fig.1c)
BAS70-05
(see Fig.1d)
BAS70-06
(see Fig.1e)
BAS70-07
(see Fig.2)
·
Small plastic SMD package
·
Low diode capacitance.
1
a 1
a 1
a 1
k 1
k 1
2
n.c.
k 2
a 2
k 2
k 2
APPLICATIONS
3
k 1
k 1 ,a 2
k 1 ,k 2
a 1 ,a 2
a 2
·
Ultra high-speed switching
4
-
-
-
-
a 1
·
Voltage clamping
·
Protection circuits.
DESCRIPTION
handbook, 2 columns
3
handbook, 2 columns
3
Planar Schottky barrier diodes with an
integrated guard ring for stress
protection. Single diodes and double
diodes with different pinning are
available.
The diodes BAS70, BAS70-04,
BAS70-05 and BAS70-06 are
encapsulated in a SOT23 small
plastic SMD package. The BAS70-07
is encapsulated in a SOT143B small
plastic SMD package.
1
2
MGC485
1
2
c. BAS70-04
Top view
MGC482
handbook, 2 columns
3
a. Simplified outline SOT23.
1
2
MGC484
d. BAS70-05.
handbook, 2 columns
3
handbook, 2 columns
3
MARKING
1
2
n.c.
MGC483
1
2
TYPE NUMBER
MARKING
CODE (1)
MGC486
b. BAS70 single diode.
e. BAS70-06.
BAS70
73p
*
BAS70-04
74p
*
Fig.1 Simplified outline (SOT23) and symbols.
BAS70-05
75p *
BAS70-06
76p
*
BAS70-07
77p
Note
1.
*
= -: Made in Hong Kong.
handbook, half page 4
3
4
3
*
= t: Made in Malaysia.
1
2
1
2
Top view
MAM194
Fig.2 Simplified outline (SOT143B) BAS70-07 and symbol.
1999 Jun 01
2
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Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V R
continuous reverse voltage
-
70
V
I F
continuous forward current
-
70
mA
I FRM
repetitive peak forward current
t p £
1s;
d£
0.5
-
70
mA
I FSM
non-repetitive peak forward current
t p <
10 ms
-
100
mA
T stg
storage temperature
-
65
+150
°
C
T j
junction temperature
-
150
°
C
T amb
operating ambient temperature
- 65
+150
°
C
ELECTRICAL CHARACTERISTICS
T amb =25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Per diode
V F
forward voltage
see Fig.3
I F =1mA
410
mV
I F =10mA
750
mV
I F =15mA
1
V
I R
reverse current
V R = 50 V; note 1; see Fig.4
100
nA
V R = 70 V; note 1; see Fig.4
10
m A
t
charge carrier life time (Krakauer
method)
I F =5mA
100
ps
C d
diode capacitance
f = 1 MHz; V R = 0; see Fig.6
2
pF
Note
1. Pulse test: t p = 300 m s; d = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R th j-a
thermal resistance from junction to ambient note 1
500
K/W
Note
1. Refer to SOT23 or SOT143B standard mounting conditions.
1999 Jun 01
3
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Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
GRAPHICAL DATA
MRA803
MRA805
10 2
10
2
I R
( m A)
I F
(mA)
(1)
10
10
1
(2)
1
10
1
(3)
10
1
10 2
(1)
(2) (3)
(4)
10
2
10
3
0
0.2
0.4
0.6
0.8
1
0
20
40
60
80
V (V)
F
V (V)
R
(1) T amb = 125 ° C.
(2) T amb =85
°
C.
(1) T amb = 150 ° C.
(2) T amb =85 ° C.
(3) T amb =25
C.
(4) T amb = - 40 ° C.
°
C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
10 3
MGL762
2
MRA804
r dif
( W )
C d
(pF)
1.5
10 2
1
10
0.5
1
0
10 - 1
1
10
10 2
0
20
40
60
80
I F (mA)
V (V)
R
f = 10 kHz.
f = 1 MHz.
Fig.5 Differential forward resistance as a function
of forward current; typical values.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 Jun 01
4
(3) T amb =25
°
22885123.039.png
Philips Semiconductors
Product specification
Schottky barrier (double) diodes
BAS70 series
PACKAGE OUTLINES
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H E
v M A
3
Q
A
A 1
1
2
c
e 1
b p
w M
B
L p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A 1
max.
b p
c
D
E
e
e 1
H E
L p
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
REFERENCES
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT23
97-02-28
1999 Jun 01
5
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