BU BU326A.pdf

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HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
®
BU326A
HIGH VOLTAGE NPN SILICON POWER TRANSISTOR
n
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
n
FAST SWITCHING SPEED
n
APPLICATIONS:
n
POWER SUPPLIES
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
n
1
2
DESCRIPTION
The BU326A is a silicon multiepitaxial mesa NPN
transistor in Jedec TO-3 metal case particularly
intended for switch-mode CTV supply system.
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
900
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
10
V
I C
Collector Current
6
A
I CM
Collector Peak Current
8
A
I B
Base Current
3
A
P tot
Total Power Dissipation at T case
£
25 o C
75
W
T stg
Storage Temperature
-65 to 200
o C
T j
Max. Operating Junction Temperature
200
o
C
December 2000
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BU326A
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max
2.33
o C/W
ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I CES
Collector Cut-off Current
(V BE = 0)
V CE = 900 V
V CE = 900 V T c = 125 o C
1
2
mA
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 10 V
10
mA
V CEO(sus)
*
Collector-Emitter
Sustaining Voltage(I B =
0)
I C = 100 mA
400
V
V CE(sat)
*
Collector-Emitter
Saturation Voltage
I C = 2.5 A I B = 0.5 A
I C = 4 A I B = 1.25 A
1.5
3
V
V
V BE(sat)
*
Base-Emitter Saturation
Voltage
I C = 2.5 A I B = 0.5 A
I C = 4 A I B = 1.25 A
1.4
1.6
V
h FE *
DC Current Gain
I C = 1 A V CE = 5 V
25
t on
Turn-on Time
I C = 2.5 A I B1 = 0.5 A
V CC = 250 V
0.5
m
s
t s
Storage Time
I C = 2.5 A I B1 = 0.5 A
I B2 = -1A A V CC = 250 V
3.5
m
s
t f
Fall Time
I C = 2.5 A I B1 = 0.5 A
I B2 = -1A A V CC = 250 V
0.5
m
s
*
Pulsed: Pulse duration = 300
m
s, duty cycle 1.5 %
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BU326A
TO-3 MECHANICAL DATA
DIM.
mm
inch
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
11.00
13.10
0.433
0.516
B
0.97
1.15
0.038
0.045
C
1.50
1.65
0.059
0.065
D
8.32
8.92
0.327
0.351
E
19.00
20.00
0.748
0.787
G
10.70
11.10
0.421
0.437
N
16.50
17.20
0.649
0.677
P
25.00
26.00
0.984
1.023
R
4.00
4.09
0.157
0.161
U
38.50
39.30
1.515
1.547
V
30.00
30.30
1.187
1.193
P
A
D
G
C
R
P003F
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BU326A
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
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